SGSIF344
SGSIF444
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
s
s
s
s
SGSIF344 IS SGS-THOMSON PREFERRED
SALESTYPE
HIGH VOLTAGE CAPABILITY
VERY HIGH SWITCHING SPEED
LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
s
SWITCH MODE POWER SUPPLIES
s
HORIZONTAL DEFLECTION FOR COLOUR
TVS AND MONITORS
DESCRIPTION
The SGSIF344 and SGSIF444 are manufactured
using Multiepitaxial Mesa technology for
cost-effective high performance and uses a
Hollow Emitter structure to enhance switching
speeds.
These transistors are available in ISOWATT220
and ISOWATT218 plastic package respectively.
The SGSF series is designed for high speed
switching applications such as power supplies
and horizontal deflection circuits in TVs and
monitors.
3
1
2
1
3
2
ISOWATT220
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
s tg
T
j
June 1997
Parameter
SGSIF344
Collector-Emitter Voltage (V
BE
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
o
T otal Dissipation at T
c
= 25 C
Storage Temperature
Max. Operating Junction T emperature
1200
600
7
7
12
5
8
40
-65 to 150
150
50
Valu e
SGSIF 444
V
V
V
A
A
A
A
W
o
o
Un it
C
C
1/7
SGSIF344 / SGSIF444
THERMAL DATA
ISOW AT T220 ISOW AT T218
R
t hj-ca se
Thermal Resistance Junction-case
Max
3.12
2.5
o
o
C/W
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symb ol
I
CES
I
CEO
I
EBO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Cond ition s
V
CE
= 1200 V
V
EC
= 380 V
V
EC
= 600 V
V
BE
= 7 V
I
C
= 100 mA
I
C
= 3.5 A
I
C
= 2.5 A
I
C
= 3.5 A
I
C
= 2.5 A
I
B
= 0.7 A
I
B
= 0.35 A
I
B
= 0.7 A
I
B
= 0.35 A
0.7
2.2
0.18
0.7
1.5
0.2
0.7
1
0.2
1.4
0.1
2.8
0.2
600
1.5
1.5
1.5
1.5
1.2
3.5
0.4
Min.
Typ .
Max.
200
200
2
1
Un it
µA
µA
mA
mA
V
V
V
V
V
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
V
CEO(sus )
∗
Collector-Emitter
Sustaining Voltage
V
CE(sat )
∗
V
BE(s at)
∗
t
ON
t
s
t
f
t
ON
t
s
t
f
t
ON
t
s
t
f
t
s
t
f
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Turn-on T ime
Storage Time
Fall T ime
Turn-on T ime
Storage Time
Fall T ime
Turn-on T ime
Storage Time
Fall T ime
Storage Time
Fall T ime
RESISTIVE LO AD
I
C
= 3.5 A
v
CC
= 250 v
I
B1
= 0.7 A
I
B1
= -1.4 A
RESISTIVE LO AD
I
C
= 3.5 A
v
CC
= 250 v
I
B1
= -1.4 A
I
B1
= 0.7 A
With Antisaturation Network
RESISTIVE LO AD
I
C
= 3.5 A
V
CC
= 250 V
V
BE
(off) = - 5 V
I
B1
= 0.7 A
INDUCTIVE LOAD
h
FE
= 5
I
C
= 3.5 A
V
CL
= 450 V V
BE(off )
= -5 V
L = 300
µH
R
BB
= 1.2
Ω
INDUCTIVE LOAD
h
FE
= 5
I
C
= 3.5 A
V
CL
= 450 V V
BE(off )
= -5 V
L = 300
µH
R
BB
= 1.2
Ω
T
c
= 100
o
C
t
s
t
f
Storage Time
Fall T ime
4
0.3
µs
µs
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %
2/7
SGSIF344 / SGSIF444
Resistive Load Switching Times
Inductive Load Switching Times
Switching Times Percentance Variation
4/7
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