ZVP4525Z
250V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=-250V; R
DS(ON)
=14 ; I
D
=-205mA
DESCRIPTION
This 250V enhancement mode P-channel MOSFET provides users with a
competitive specification offering efficient power handling capability, high
impedance and is free from thermal runaway and thermally induced
secondary breakdown. Applications benefiting from this device include a
variety of Telecom and general high voltage switching circuits.
SOT223 and SOT23-6 versions are also available.
FEATURES
SOT89
•
High voltage
•
Low on-resistance
•
Fast switching speed
•
Low gate drive
•
Low threshold
•
Complementary N-channel Type ZVN4525Z
•
SOT89 package
APPLICATIONS
•
Earth Recall and dialling switches
•
Electronic hook switches
•
High Voltage Power MOSFET Drivers
•
Telecom call routers
•
Solid state relays
ORDERING INFORMATION
DEVICE
ZVP4525ZTA
ZVP4525ZTC
REEL SIZE
(inches)
7
13
TAPE WIDTH (mm)
12mm embossed
12mm embossed
QUANTITY
PER REEL
1000 units
4000 units
D
Top View
S
D
G
DEVICE MARKING
•
P52
ISSUE 2 - JUNE 2007
1
SEMICONDUCTORS
ZVP4525Z
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current (V GS =10V; TA=25°C)(a)
(V GS =10V; TA=70°C)(a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V DSS
V GS
ID
ID
I DM
IS
I SM
PD
T j
:
T stg
LIMIT
250
±40
-205
-164
-1
-0.75
-1
1.2
9.6
-55 to +150
UNIT
V
V
mA
mA
A
A
A
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
103
50
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regard to
voltage spacing between conductors.
ISSUE 2 - JUNE 2007
SEMICONDUCTORS
2
ZVP4525Z
CHARACTERISTICS
R
DS(on)
Limit
Max Power Dissipation (W)
1
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
20
40
60
80
100
120
140
160
I
C
Collector Current (A)
100m
DC
1s
100ms
10ms
Single Pulse
T
amb
=25°C
1ms
100µs
10m
1m
1
10
100
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
120
Derating Curve
Thermal Resistance (°C/W)
T
amb
=25°C
100
80
60
40
D=0.2
D=0.5
Maximum Power (W)
100
Single Pulse
T
amb
=25°C
10
Single Pulse
D=0.05
D=0.1
1
20
0
100µ
1m
10m
100m
1
10
100
1k
0.1
100µ
1m
10m
100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
ISSUE 2 - JUNE 2007
3
SEMICONDUCTORS
ZVP4525Z
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
V(BR)DSS -250
I DSS
I GSS
V GS(th)
R DS(on)
-0.8
-285
-30
±1
-1.5
10
13
-500
±100
-2.0
14
18
V
nA
nA
V
Ω
Ω
I D =-1mA, V GS =0V
V DS =-250V, V GS =0V
V GS =±40V, V DS =0V
I =-1mA, V DS = V GS
D
V GS =-10V,
I D =-200mA
V GS =-3.5V,
I D =-100mA
V DS =-10V,I D =-0.15A
SYMBOL MIN.
TYP.
MAX. UNIT CONDITIONS.
Forward Transconductance (3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
g fs
80
200
mS
C iss
C oss
C rss
73
12.8
3.91
pF
pF
pF
V DS =-25 V, V GS =0V,
f=1MHz
t d(on)
tr
t d(off)
tf
Qg
Q gs
Q gd
1.53
3.78
17.5
7.85
2.45
0.22
0.45
3.45
0.31
0.63
ns
ns
ns
ns
nC
nC
nC
V DS =-25V,V GS =-10V,
I
D
=-200mA(refer to
test circuit)
V DD =-30V, I D =-200m
A
R G =50Ω, V GS =-10V
(refer to test circuit)
V SD
t rr
Q rr
205
21
0.97
290
29
V
ns
nC
T j =25°C, I S =-200mA,
V GS =0V
T j =25°C, I F =-200mA,
di/dt=100A/μs
(1) Measured under pulsed conditions. Width=300μs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JUNE 2007
SEMICONDUCTORS
ZVP4525Z
TYPICAL CHARACTERISTICS
0.6
1.0
T = 25°C
10V
T = 150°C
10V
0.8
5V
-I
D
Drain Current (A)
-I
D
Drain Current (A)
0.4
V
GS
5V
0.6
V
GS
4V
0.4
0.2
0.0
0
5
10
4V
3.5V
3V
2V
2.5V
0.2
3V
3.5V
2.5V
2V
0.0
0
5
10
15
15
-V
DS
Drain-Source Voltage (V)
-V
DS
Drain-Source Voltage (V)
Output Characteristics
Normalised R
DS(on)
and V
GS(th)
1
2.5
2.0
1.5
1.0
0.5
0.0
-50
Output Characteristics
-I
D
Drain Current (A)
T = 25°C
V
GS
= 10V
I
D
= 200mA
R
DS(on)
T = 150°C
0.1
V
GS(th)
V
GS
= V
DS
I
D
= 1mA
V
DS
= 10V
2
3
4
5
0
50
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
( W)
Normalised Curves v Temperature
-I
SD
Reverse Drain Current (A)
100
2V
2.5V
3V
V
GS
3.5V
4V
5V
10V
1
T = 150°C
0.1
T = 25°C
10
0.01
0.1
T = 25°C
0.01
0.4
0.6
0.8
1.0
1.2
1
-I
D
Drain Current (A)
-V
DS
Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 2 - JUNE 2007
SEMICONDUCTORS
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