Green
A Product Line of
Diodes Incorporated
ZX5T851G
60V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223
Features
BV
CEO
> 60V
I
C
= 6A High Continuous Collector Current
I
CM
= 20A Peak Pulse Current
Low Saturation Voltage V
CE(sat)
< -60mV @ -1A
R
SAT
= 35mΩ for a Low Equivalent On-Resistance
h
FE
Specified up to 10A for a High Gain Hold-Up
Complementary PNP Type: ZX5T951G
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT223
Case Material: Molded Plastic. “Green” Molding Compound;
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads; Solderable per
MIL-STD-202, Method 208
Weight: 0.112 grams (Approximate)
Applications
Emergency Lighting Circuits
MOSFET & IGBT Gate Drivers
Solenoid, Relay and Actuator Drivers
DC Modules
Motor Control
SOT223
Top View
Device Symbol
Top View
Pin-Out
Ordering Information
(Note 4)
Product
ZX5T851GTA
ZX5T851GTC
Notes:
Compliance
AEC-Q101
AEC-Q101
Marking
X5T851
X5T851
Reel size (inches)
7
13
Tape width (mm)
12
12
Quantity per reel
1,000
4,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http:// www.diodes.com/products/packages.html.
Marking Information
SOT223
X5T
851
ZX5T851G
Document Number DS33421 Rev. 4 - 2
YWW
X5T 851 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
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A Product Line of
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ZX5T851G
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
Value
150
60
7
6
20
Unit
V
V
V
A
A
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
(Note 9)
Symbol
Value
3.0
2.0
1.6
1.2
41.7
62.5
78.1
104
10.5
-55 to +150
°C
Unit
Power Dissipation
P
D
W
Thermal Resistance, Junction to Ambient
R
JA
°C/W
Thermal Resistance Junction to Lead
Operating and Storage Temperature Range
R
JL
T
J,
T
STG
ESD Ratings
(Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
6. Same as Note 5, except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as Note 5, except the device is mounted on 25mm x 25mm 1oz copper.
8. Same as Note 5, except the device is mounted on minimum recommended pad layout.
9. Thermal resistance from junction to solder-point (at the end of the collector lead).
10. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
ZX5T851G
Document Number DS33421 Rev. 4 - 2
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A Product Line of
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ZX5T851G
Thermal Characteristics and Derating Information
I
C
Collector Current (A)
10
Limit
Max Power Dissipation (W)
V
CE(sat)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25mmX25mm FR4
1oz Cu
52mmX52mm FR4
2oz Cu
1
DC
1s
100ms
10ms
Single Pulse. T
amb
=25°C
52mmX52mm FR4
2oz Cu
100m
1ms
100µs
10m
100m
1
10
100
20
40
60
80
100 120 140 160
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
Single Pulse. T
amb
=25°C
Thermal Resistance (°C/W)
40
30
Max Power Dissipation (W)
52mmX52mm FR4
2oz Cu
100
52mmX52mm FR4
2oz Cu
D=0.5
20
D=0.2
Single Pulse
D=0.05
D=0.1
10
10
0
100µ
1m
10m 100m
1
10
100
1k
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ZX5T851G
Document Number DS33421 Rev. 4 - 2
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ZX5T851G
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
CBO
BV
CER
BV
CEO
BV
EBO
I
CBO
I
CER
R
B
≤ 1kΩ
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 11)
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Min
150
150
60
7
100
100
55
20
-
-
Typ
190
190
80
8.1
<1
<1
<1
20
45
50
100
210
1000
940
200
200
105
40
31
130
42
760
Max
20
0.5
20
0.5
10
30
60
70
135
260
1100
1050
300
-
-
Unit
V
V
V
V
nA
µA
nA
µA
nA
I
EBO
Collector-Emitter Saturation Voltage (Note 11)
V
CE(sat)
mV
Base-Emitter Saturation Voltage (Note 11)
Base-Emitter Turn-On Voltage (Note 11)
V
BE(sat)
V
BE(on)
h
FE
C
obo
f
T
t
on
t
off
mV
mV
pF
MHz
ns
DC Current Gain (Note 11)
Output Capacitance
Current Gain-Bandwidth Product
Switching Times
Note:
Test Condition
I
C
= 100µA
I
C
= -1µA, R
B
≤ 1kΩ
I
C
= 10mA
I
E
= 100µA
V
CB
= 120V
V
CB
= 120V, T
A
= +100°C
V
CB
= 120V
V
CB
= 120V, T
A
= +100°C
V
EB
= 6V
I
C
= 100mA, I
B
= 5mA
I
C
= 1A, I
B
= 100mA
I
C
= 1A, I
B
= 50mA
I
C
= 2A, I
B
= 50mA
I
C
= 6A, I
B
= 300mA
I
C
= 6A, I
B
= 300mA
I
C
= 6A, V
CE
= 1V
I
C
= 10mA, V
CE
= 1V
I
C
= 2A, V
CE
= 1V
I
C
= 5A, V
CE
= 1V
I
C
= 10A, V
CE
= 1V
V
CB
= 10V. f = 1MHz
V
CE
= 5V, I
C
= 100mA,
f = 100MHz
I
C
= 1A, V
CC
= 10V,
I
B1
= -I
B2
= 100mA
11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
ZX5T851G
Document Number DS33421 Rev. 4 - 2
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© Diodes Incorporated
A Product Line of
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ZX5T851G
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
1
Tamb=25°C
0.6
0.5
I
C
/I
B
=10
V
CE(SAT)
(V)
100m
V
CE(SAT)
(V)
0.4
0.3
0.2
0.1
-55°C
100°C
25°C
I
C
/I
B
=50
I
C
/I
B
=20
10m
1m
10m
100m
1
I
C
/I
B
=10
10
0.0
1m
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
V
CE(SAT)
v I
C
250
1.2
V
CE
=1V
100°C
V
CE(SAT)
v I
C
1.6
I
C
/I
B
=10
1.0
0.8
0.6
0.4
0.2
0.0
1m
10m
100m
1
10
-55°C
25°C
Typical Gain (h
FE
)
200
150
100
50
0
1.4
1.2
Normalised Gain
V
BE(SAT)
(V)
1.0
25°C
-55°C
0.8
0.6
0.4
1m
10m
100m
100°C
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
1.4
1.2
V
CE
=1V
V
BE(SAT)
v I
C
V
BE(ON)
(V)
1.0
25°C
-55°C
0.8
0.6
0.4
1m
10m
100m
100°C
1
10
I
C
Collector Current (A)
V
BE(ON)
v I
C
ZX5T851G
Document Number DS33421 Rev. 4 - 2
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