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SGR6N60UF

Description
Ultra-Fast IGBT
CategoryDiscrete semiconductor    The transistor   
File Size508KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

SGR6N60UF Overview

Ultra-Fast IGBT

SGR6N60UF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-252
package instructionDPAK-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW CONDUCTION LOSS
Shell connectionCOLLECTOR
Maximum collector current (IC)6 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Maximum landing time (tf)150 ns
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)30 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)202 ns
Nominal on time (ton)54 ns
SGR6N60UF
IGBT
SGR6N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 3A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
C
G
G
E
D-PAK
E
T
C
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGR6N60UF
600
±
20
6
3
25
30
12
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Typ.
--
--
Max.
4.0
50
Units
°C/W
°C/W
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2002 Fairchild Semiconductor Corporation
SGR6N60UF Rev. A1
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