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SGR2N60UFD

Description
Ultra-Fast IGBT
CategoryDiscrete semiconductor    The transistor   
File Size538KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

SGR2N60UFD Overview

Ultra-Fast IGBT

SGR2N60UFD Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-252
package instructionSMALL OUTLINE, R-PSSO-G2
Contacts3
Reach Compliance Codeunknown
Other featuresLOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Shell connectionCOLLECTOR
Maximum collector current (IC)2.4 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)160 ns
Gate emitter threshold voltage maximum7.5 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-252
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)25 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)291 ns
Nominal on time (ton)43 ns
SGR2N60UFD
IGBT
SGR2N60UFD
Ultra-Fast IGBT
General Description
Fairchild's UFD series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UFD series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
High speed switching
Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 1.2A
High input impedance
CO-PAK, IGBT with FRD : t
rr
= 45ns (typ.)
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
C
G
G
E
D-PAK
E
T
C
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
I
F
I
FM
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGR2N60UFD
600
±
20
2.4
1.2
10
1.5
12
25
10
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJC
(DIODE)
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient (PCB Mount)
(2)
Typ.
--
--
--
Max.
5.0
5.0
50
Units
°C/W
°C/W
°C/W
Notes :
(2) Mounted on 1” squre PCB (FR4 or G-10 Material)
©2002 Fairchild Semiconductor Corporation
SGR2N60UFD Rev. A1
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