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SGP23N60UF

Description
Ultra-Fast IGBT
CategoryDiscrete semiconductor    The transistor   
File Size531KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric View All

SGP23N60UF Overview

Ultra-Fast IGBT

SGP23N60UF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW CONDUCTION LOSS, HIGH SPEED SWITCHING
Maximum collector current (IC)23 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE
Maximum landing time (tf)280 ns
Gate emitter threshold voltage maximum7.5 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)100 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)320 ns
Nominal on time (ton)55 ns
SGP23N60UF
IGBT
SGP23N60UF
Ultra-Fast IGBT
General Description
Fairchild's UF series of Insulated Gate Bipolar Transistors
(IGBTs) provides low conduction and switching losses.
The UF series is designed for applications such as motor
control and general inverters where high speed switching is
a required feature.
Features
• High speed switching
• Low saturation voltage : V
CE(sat)
= 2.1 V @ I
C
= 12A
• High input impedance
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
C
G
GCE
TO-220
T
C
= 25°C unless otherwise noted
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
CM (1)
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from Case for 5 Seconds
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
@ T
C
= 100°C
SGP23N60UF
600
±
20
23
12
92
100
40
-55 to +150
-55 to +150
300
Units
V
V
A
A
A
W
W
°C
°C
°C
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
1.2
62.5
Units
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
SGP23N60UF Rev. A1
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