SGM2016AM/AP
GaAs N-channel Dual-Gate MES FET
Description
The SGM2016AM/AP is an N-channel dual-gate
GaAs MES FET for UHF-band low-noise amplification.
This FET is suitable for a wide range of applications
including UHF TV tuners, cellular/cordless phone,
and DBS IF amplifiers.
Features
•
•
•
•
Low voltage operation
Low noise NF = 1.2dB (typ.) at 900MHz
High gain Ga = 21dB (typ.) at 900MHz
High stability
SGM2016AM
SGM2016AP
•
Built-in gate protection diode
Application
UHF-band high-frequency amplifier, mixer, and oscillator
Structure
GaAs, N-channel, dual-gate metal semiconductor field-effect transistor
Absolute Maximum Ratings
(Ta = 25°C)
•
Drain to source voltage
V
DSX
12
•
Gate 1 to source voltage
V
G1S
–5
•
Gate 2 to source voltage
V
G2S
–5
•
Drain current
I
D
55
•
Allowable power dissipation P
D
150
•
Channel temperature
Tch
150
•
Storage temperature
Tstg
–55 to +150
V
V
V
mA
mW
°C
°C
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1–
E96Y10-PS
SGM2016AM/AP
Electrical Characteristics
Item
Drain cut-off current
Symbol
I
DSX
Conditions
V
DS
= 12V
V
G1S
= –4V
V
G2S
= 0V
V
G1S
= –4.5V
V
G2S
= 0V
V
DS
= 0V
V
G2S
= –4.5V
V
G1S
= 0V
V
DS
= 0V
V
DS
= 5V
V
G1S
= 0V
V
G2S
= 0V
V
DS
= 5V
I
D
= 100µA
V
G2S
= 0V
V
DS
= 5V
I
D
= 100µA
V
G1S
= 0V
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1kHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 1MHz
V
DS
= 5V
I
D
= 10mA
V
G2S
= 1.5V
f = 900MHz
Min.
Typ.
(Ta = 25°C)
Max.
50
Unit
µA
Gate 1 to source current
I
G1SS
–8
µA
Gate 2 to source current
I
G2SS
–8
µA
Drain saturation current
I
DSS
10
35
mA
Gate 1 to source cut-off voltage
V
G1S
(OFF)
–2.5
V
Gate 2 to source cut-off voltage
V
G2S
(OFF)
–2.5
V
Forward transfer admittance
Input capacitance
Feedback capacitance
Noise figure
NF associated gain
gm
Ciss
Crss
NF
Ga
20
30
0.9
25
1.2
2.0
40
2.0
ms
pF
fF
dB
dB
17
21
Typical Characteristics
(Ta = 25°C)
I
D
vs. V
DS
40
(V
G2S
= 1.5V)
V
G1S
= 0V
20
25
(V
DS
= 5V)
V
G2S
= 1.5V
I
D
vs. V
G1S
1.0V
0.5V
I
D
– Drain current [mA]
I
D
– Drain current [mA]
30
0V
15
20
–0.3V
10
–0.5V
10
–0.6V
–0.9V
5
–1.0V
0
–2.0
–1.5
–1.0
–0.5
V
G1S
– Gate 1 to source voltage [V]
0
0
0
1
2
3
4
5
V
DS
– Drain to source voltage [V]
6
–2–
SGM2016AM/AP
I
D
vs. V
G2S
25
(V
DS
= 5V)
50
(V
DS
= 5V)
gm vs. V
G1S
gm – Forward transfer admittance [ms]
20
I
D
– Drain current [mA]
V
G1S
= 0V
–0.2V
40
V
G2S
= 1.5V
15
–0.4V
10
30
1.0V
0.5V
–0.6V
20
5
–0.8V
–1.0V
10
0V
–0.5V
–1.0V
–1.5
–1.0
–0.5
V
G1S
– Gate 1 to source voltage [V]
0
0
–2.0
–1.5
–1.0
–0.5
V
G2S
– Gate 2 to source voltage [V]
0
0
–2.0
NF vs. V
G1S
5
(V
DS
= 5V, f = 900MHz)
4
25
30
Ga vs. V
G1S
(V
DS
= 5V, f = 900MHz)
Ga – Associated gain [dB]
NF – Noise figure [dB]
V
G2S
= 1.5V
20
1.0V
3
V
G2S
= 0.5V
15
0.5V
2
1.0V
1.5V
1
10
5
0
–1.2
0
–1.0 –0.8 –0.6 –0.4 –0.2
0
V
G1S
– Gate 1 to source voltage [V]
0.2
–1.2 –1.0 –0.8 –0.6 –0.4 –0.2
0
V
G1S
– Gate 1 to source voltage [V]
0.2
NF, Ga vs. I
D
3.0
(V
DS
= 5V, V
G2S
= 1.5V, f = 900MHz)
2.5
25
2.5
30
3.0
NF, Ga vs. f
35
(V
DS
= 5V, V
G2S
= 1.5V, I
D
= 10mA)
30
NF – Noise figure [dB]
NF – Noise figure [dB]
Ga
2.0
20
Ga – Associated gain [dB]
2.0
Ga
25
1.5
NF
1.0
15
1.5
NFmin
20
10
1.0
15
0.5
5
0.5
10
0
0
2
4
6 8 10 12 14 16 18 20 22
I
D
– Drain current [mA]
0
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
f – Frequency [GHz]
5
–3–
Ga – Associated gain [dB]
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