DUP45V6P5
QUAD SURFACE MOUNT TVS ARRAY
Features
•
•
•
•
•
•
Quad TVS in Common Anode Configuration
Ultra-Small Surface Mount Package
Ideal For Transient Suppression and ESD Protection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
•
•
•
Case: SOT953
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Finish: Matte Tin, Annealed Over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.002 grams (approximate)
NEW PRODUCT
ESD Capability
•
•
IEC 61000-4-2 Contact Method ±8kV
IEC 61000-4-2 Air Discharge Method ±15kV
K4
5
D4
D1
1
K1
2
A1/A2
A3/A4
D3
K3
4
D2
3
K2
Top View
Device Schematic
Ordering Information
(Note 4)
Part Number
DUP45V6P5-7
Notes:
Case
SOT953
Packaging
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
V2
V2 = Product type marking code
DUP45V6P5
Document number: DS36048 Rev. 3 - 2
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February 2013
© Diodes Incorporated
DUP45V6P5
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Forward Voltage @ I
F
= 10mA
Symbol
V
F
Value
0.9
Unit
V
NEW PRODUCT
Thermal Characteristics
Characteristic
Power Dissipation (Notes 5)
Peak Power Dissipation, 8x20µS Waveform (Note 6)
Thermal Resistance, Junction-to-Ambient (Note 5)
Operating and Storage Temperature Range
Symbol
P
D
P
pk
R
θ
JA
T
J,
T
STG
Value
300
20
417
-55 to +150
Unit
mW
W
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Type
Number
DUP45V6P5
Notes:
Marking
Code
V2
Breakdown Voltage
(Note 7)
V
BR
@ I
T
= 1mA
Min (V) Nom (V) Max (V)
5.3
5.6
5.9
Leakage Current
(Note 7)
I
RM
@ V
RM
(V)
Max(μA)
1.0
3.0
Max. Clamping
Voltage
(Note 6)
V
C
@ I
PP
V
C
(V) I
PP
(A)
10.5
1.0
Capacitance
@0V Bias(pF)
(Note 8)
C
T
Typ
Max
13
17
Capacitance
@3V Bias(pF)
(Note 8)
C
T
Typ
Max
7.0
11.5
5. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. Suggested Pad Layout Document AP02001,
which can be found on our website at http://www.diodes.com.
6. Non-repetitive current pulse per Figure 3 and derate above T
A
= +25°C per Figure 3.
7. Short duration pulse test used to minimize self-heating effect.
8. Per element, f = 1MHZ, T
A
= +25°C
300
Note 5
100
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT
P
D
, POWER DISSIPATION (mW)
250
75
200
150
50
100
25
50
0
0
25
50
75
100
125
150
T
A
, AMBIENT TEMPERATURE (
°
C)
Figure 1 Power Derating Curve
175
0
0
25
50
75
100 125 150 175
T
A
, AMBIENT TEMPERATURE (°C)
Figure 2 Pulse Derating Curve
200
DUP45V6P5
Document number: DS36048 Rev. 3 - 2
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February 2013
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DUP45V6P5
1000
100
I
F
, INSTANTANEOUS FORWARD CURRENT (mA)
I
PP
, PEAK PULSE CURRENT (%I
PP
)
100
T
A
= 85°C
10
T
A
= 125°C
T
A
= 25°C
NEW PRODUCT
50
1
T
A
= 150°C
0.1
T
A
= -55°C
0
0
20
40
60
t, TIME (µs)
Figure 3 Pulse Waveform
I
R
, INSTANTANEOUS REVERSE CURRENT(nA)
0.01
300
500
700
900
1100
1300
V
F
, INSTANTANEOUS FORWARD VOLTAGE (mV)
Figure 4 Typical Forward Characteristics
20
100
f = 1MHz
18
C
T
, TOTAL CAPACITANCE (pF)
16
14
12
10
8
6
T
A
= 25°C
10
1
0
1
2
3
4
5
V
R
, INSTANTANEOUS REVERSE VOLTAGE(V)
Figure 5 Typical Reverse Characteristics
4
0
2
3
4
V
R
, REVERSE VOLTAGE (V)
Figure 6 Typical Total Capacitance
vs. Reverse Voltage (Per Element)
1
5
DUP45V6P5
Document number: DS36048 Rev. 3 - 2
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February 2013
© Diodes Incorporated
DUP45V6P5
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
e1
L
NEW PRODUCT
E1
E
e
b (5 places)
c
A
A1
SOT953
Dim Min
Max
Typ
A
0.40 0.50 0.45
A1
0
0.05
−
b
0.10 0.20 0.15
c
0.12 0.18 0.15
D
0.95 1.05 1.00
E
0.95 1.05 1.00
E1
0.75 0.85 0.80
e
0.35
−
−
e1
0.70
−
−
L
0.05 0.15 0.10
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
C
Y1
Y (5X)
Dimensions Value (in mm)
C
0.350
X
0.200
Y
0.200
Y1
1.100
X (5X)
DUP45V6P5
Document number: DS36048 Rev. 3 - 2
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DUP45V6P5
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
www.diodes.com
NEW PRODUCT
DUP45V6P5
Document number: DS36048 Rev. 3 - 2
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February 2013
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