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BAV103_13

Description
High Voltage, General Purpose Diode
File Size133KB,6 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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BAV103_13 Overview

High Voltage, General Purpose Diode

BAV103 — High Voltage, General Purpose Diode
April 2013
BAV103
High Voltage, General Purpose Diode
Description
Cathode Band
A general purpose diode that couples high forward con-
ductance fast swiching speed and high blocking volt-
ages in a glass leadless LL-34 surface mount package.
Placement of the expansion gap has no relationship to
the location of the cathode terminal which is indicated by
the first color band.
SOD80
Absolute Maximum Ratings
(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
W
IV
I
O
I
F
i
f
I
FSM
T
STG
T
J
Parameter
Working Inverse Voltage
Average Rectified Current
DC Forward Current
Recurrent Peak Forward Current
Non-repetitive Peak Forward Current
Storage Temperature Range
Operating Junction Temperature
Pulse Width = 1.0 s
Pulse Width = 1.0
μs
Value
200
200
500
600
1.0
4.0
-65 to +200
-65 to +200
Units
V
mA
mA
mA
A
A
°C
°C
Note:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Linear Derating Factor from T
A
= 25°C
Thermal Resistance, Junction to Ambient
Value
500
3.33
350
Units
mW
mW/°C
°C/W
© 2004 Fairchild Semiconductor Corporation
BAV103 Rev. 1.1.0
www.fairchildsemi.com
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