BSR18A — PNP General-Purpose Amplifier
March 2014
BSR18A
PNP General-Purpose Amplifier
Description
This device is designed as a general-purpose ampli-
fier for switching applications at collector currents of
10
μA
to 100 mA. Sourced from process 66.
C
E
SOT-23
Mark: T92
B
Ordering Information
Part Number
BSR18A
Marking
T92
Package
SOT-23 3L
Packing Method
Tape and Reel
Absolute Maximum Ratings
(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J ,
T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Parameter
Value
-40
-40
-5
-200
-55 to +150
Unit
V
V
V
mA
°C
Collector Current - Continuous
Junction and Storage Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 1997 Fairchild Semiconductor Corporation
BSR18A Rev. 1.1.0
1
www.fairchildsemi.com
BSR18A — PNP General-Purpose Amplifier
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Total Device Dissipation
Derate Above T
A
= 25°C
Parameter
Max.
350
2.8
357
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction to Ambient
Note:
3. Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Conditions
I
C
= -1.0 mA, I
E
= 0
I
E
= -10
μA,
I
C
= 0
V
CB
= -30 V, I
E
= 0
V
EB
= -3.0 V, I
C
= 0
I
C
= -0.1 mA, V
CE
= -1.0 V
I
C
= -1.0 mA, V
CE
= -1.0 V
Min.
-40
-40
-5.0
Max.
Unit
V
V
V
Collector-Emitter Breakdown Voltage I
C
= -10
μA,
I
B
= 0
-50
-50
60
80
100
60
30
-0.25
-0.40
-0.65
-0.85
-0.95
250
4.5
10
2
100
3
12
400
60
35
35
275
75
300
nA
nA
h
FE
DC Current Gain
(4)
I
C
= -10 mA, V
CE
= -1.0 V
I
C
= -50 mA, V
CE
= -1.0 V
I
C
= -100 mA, V
CE
= -1.0 V
V
CE
(sat)
V
BE
(sat)
f
T
C
cb
C
eb
h
ie
h
ie
h
ie
t
d
t
r
t
s
t
f
Collector-Emitter Saturation
Voltage
(4)
Base-Emitter Saturation Voltage
(4)
Transition Frequency
Collector-Base Capacitance
Emitter-Base Capacitance
Input Impedance
Small-Signal Current Gain
Output Admittance
Delay Time
Rise Time
Storage Time
Fall Time
I
C
= -10 mA, I
B
= -1.0 mA
I
C
= -50 mA, I
B
= -5.0 mA
I
C
= -10 mA, I
B
= -1.0 mA
I
C
= -50 mA, I
B
= -5.0 mA
I
C
= -10 mA, V
CE
= -20 V,
f = 100 MHz
V
CB
= -5.0 V, I
E
= 0,
f = 100 kHz
V
EB
= -0.5 V, I
C
= 0,
f = 100 kHz
V
CE
= -10 V, I
C
= -1.0 mA,
f = 1.0 kHz
V
CE
= -10 V, I
C
= -1.0 mA,
f = 1.0 kHz
V
CE
= -10 V, I
C
= -1.0 mA,
f = 1.0 kHz
I
C
= -10 mA, I
B1
= -1.0 mA,
V
EB
= -0.5 V
I
C
= -10 mA,
I
Bon
= I
Boff
= -1.0 mA
V
V
MHz
pF
pF
kΩ
μS
ns
ns
ns
ns
Note:
4. Pulse test: pulse width
≤
300
μs,
duty cycle
≤
0.01%.
© 1997 Fairchild Semiconductor Corporation
BSR18A Rev. 1.1.0
2
www.fairchildsemi.com
BSR18A — PNP General-Purpose Amplifier
Typical Performance Characteristics
V
CESAT
- COLLECTOR EMITTER VOLTAGE (V)
h
F E
- TYPICAL PULSED CURRENT GAIN
250
V
CE
= 1 .0V
125 °C
0.3
β
= 10
0.25
0.2
25 °C
200
150
25 °C
0.15
0.1
125°C
100
- 40 °C
0.05
0
- 40 °C
50
0.1
0.2
0.5 1
2
5
10 20
I
C
- COLLECTOR CURRE NT (mA)
50
100
1
10
100
I
C
- COLLECTOR CURRENT (mA)
200
Figure 1. Typical Pulsed Current Gain vs.
Collector Current
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
V
BE( ON)
- BASE EMITTER ON VOLTAGE (V)
V
BESAT
- BASE EM ITTE R VOLTAGE (V)
1
0.8
β
= 10
- 40 °C
1
0.8
- 40 °C
25 °C
125 °C
25 °C
0.6
0.4
0.2
0
125 °C
0.6
0.4
0.2
0
0.1
V
CE
= 1V
1
10
100
I
C
- COLLECTOR CURRE NT (mA)
200
1
10
I
C
- COLLECTOR CURRENT (mA)
25
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
Figure 4. Base-Emitter On Voltage vs.
Collector Current
I
CBO
- COLLE CTOR CURRENT (nA)
100
V
10
CB
= 25V
CAPACITANCE (pF)
10
C obo
8
6
4
2
0
0.1
C ibo
1
0.1
0.01
25
50
75
100
T
A
- AMBIE NT TEMP ERATURE (
°
C)
125
1
REVERSE BIAS VOLTAGE (V)
10
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
Figure 6. Common-Base Open Circuit Input and
Output Capacitance vs. Reverse Bias Voltage
© 1997 Fairchild Semiconductor Corporation
BSR18A Rev. 1.1.0
3
www.fairchildsemi.com
BSR18A — PNP General-Purpose Amplifier
Typical Performance Characteristics
(Continued)
6
V
CE
= 5.0V
NF - NOISE FIGURE (dB)
12
NF - NOISE FIGURE (dB)
10
8
6
4
I C = 100
μA
I C = 1.0 mA
5
4
3
2
I C = 1.0 mA, R S = 200Ω
I C = 100
μA,
R S = 200Ω
V
CE
= 5.0V
f = 1.0 kHz
1
0
0.1
I C = 100
μA,
R S = 2.0 kΩ
2
0
0.1
1
10
f - FREQUENCY (kHz)
100
1
10
R
S
- SOURCE RESISTANCE (
kΩ
)
100
Figure 7. Noise Figure vs. Frequency
Figure 8. Noise Figure vs. Source Resistance
500
ts
500
t off
t on
I
B1
=
I
c
10
t on
100
TIME (nS)
100
TIME (nS)
tf
10
I
B1
= I
B2
=
I
c
10
tr
td
10
V
BE(OFF)
= 0.5V
I
c
t off
I = I =
B1
B2
10
1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
1
1
I
10
- COLLECTOR CURRENT (mA)
100
Figure 9. Switching Times vs. Collector Current
Figure 10. Turn-On and Turn-Off Times vs.
Collector Current
)
_ 4
350
P
D
- POWER DISSIPATION (mW)
300
250
200
150
100
50
0
0
25
50
75
100
TEMPERATURE (
o
C)
125
150
SOT-23
h
re
- VOLTAGE FEEDBACK RATIO (x10
100
10
1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
Figure 10. Power Dissipation vs.
Ambient Temperature
Figure 11. Voltage Feedback Ratio
© 1997 Fairchild Semiconductor Corporation
BSR18A Rev. 1.1.0
4
www.fairchildsemi.com
BSR18A — PNP General-Purpose Amplifier
Typical Performance Characteristics
(Continued)
h
oe
- OUTPUT ADMITTANCE (
μ
mhos)
10
h
ie
- INPUT IMPEDANCE (k
Ω
)
V
CE
= 10 V
f = 1.0 kHz
1000
V
CE
= 10 V
f = 1.0 kHz
1
100
0.1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
10
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
Figure 13. Input Impedance
Figure 14. Output Admittance
1000
500
h
fe
- CURRENT GAIN
V
CE
= 10 V
f = 1.0 kHz
200
100
50
20
10
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
Figure 15. Current Gain
© 1997 Fairchild Semiconductor Corporation
BSR18A Rev. 1.1.0
5
www.fairchildsemi.com
京公网安备 11010802033920号
EEWORLD
