Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
operation up to 64 kHz.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
6.0
1.7
MAX.
1500
800
12
30
45
5.0
-
2.0
UNIT
V
V
A
A
W
V
A
µs
T
hs
≤
25 ˚C
I
C
= 6.0 A; I
B
= 1.2 A
I
Csat
= 6.0 A; I
B(end)
= 0.55 A
PINNING - SOT199
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
12
30
8
12
200
7
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
average over any 20 ms period
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
1
Turn-off current.
September 1997
1
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
PARAMETER
Collector cut-off current
2
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
V
EB
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 6.0 A; I
B
= 1.2 A
I
C
= 6.0 A; I
B
= 1.2 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 6 A; V
CE
= 5 V
MIN.
-
-
-
7.5
800
-
-
-
5
TYP.
-
-
-
13.5
-
-
-
10
7
MAX.
0.25
2.0
0.25
-
-
5.0
1.3
-
9
UNIT
mA
mA
mA
V
V
V
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
C
c
PARAMETER
Collector capacitance
Switching times (64 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 6.0 A; L
C
= 170
µH;
C
fb
= 5.4 nF; I
B(end)
= 0.55 A;
L
B
= 0.6
µH;
-V
BB
= 2 V;
(-dI
B
/dt = 3.33 A/µs)
TYP.
145
MAX.
-
UNIT
pF
1.7
0.1
2.0
0.2
µs
µs
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527AF
ICsat
+ 50v
100-200R
IC
90 %
Horizontal
tf
10 %
Oscilloscope
IB
t
ts
IBend
Vertical
100R
6V
30-60 Hz
1R
t
- IBM
Fig.1. Test circuit for V
CEOsust
.
Fig.4. Switching times definitions.
IC / mA
+ 150 v nominal
adjust for ICsat
Lc
250
200
100
IBend
LB
T.U.T.
Cfb
0
VCE / V
min
VCEOsust
-VBB
Fig.2. Oscilloscope display for V
CEOsust
.
Fig.5. Switching times test circuit.
TRANSISTOR
IC
DIODE
ICsat
VCC
t
LC
IB
I B end
t
5 us
6.5 us
16 us
IBend
LB
T.U.T.
CFB
VCL
-VBB
VCE
t
Fig.3. Switching times waveforms.
Fig.6. Test Circuit RBSOA. V
CC
= 140 V; -V
BB
= 4 V;
L
C
= 100 - 200
µ
H; V
CL
≤
1500 V; L
B
= 3
µ
H;
C
FB
= 1 - 2.2 nF; I
B
(end) = 1 - 2 A
September 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527AF
100
h
FE
Tj = 85 C
Tj = 25 C
Tj = -40 C
BU2527A
1.2
1.1
1
VBESAT / V
Tj = 85 C
Tj = 25 C
BU2527A
10
0.9
0.8
0.7
IC =
7A
6A
5A
0
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8
IB / A
2
1
0.01
0.6
0.1
1
IC / A
10
100
Fig.7. Typical DC current gain. h
FE
= f (I
C
)
V
CE
= 5 V
Fig.10. Typical base-emitter saturation voltage.
V
BE
sat = f (I
B
); parameter I
C
BU2527AF
1.2
1.1
1
VBESAT / V
Tj = 85 C
Tj = 25 C
BU2527A
100
Poff / W
IC =
0.9
0.8
0.7
0.6
0.5
0.4
0.1
1
IC / A
10
1
0
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8
IB / A
2
10
6A
5A
IC/IB =
3
5
Fig.8. Typical base-emitter saturation voltage.
V
BE
sat = f (I
C
); parameter I
C
/I
B
Fig.11. Typical turn-off losses. T
j
= 85˚C
Poff = f (I
B
); parameter I
C
; f = 64 kHz
BU2527AF
10
VCESAT / V
Tj = 85 C
Tj = 25 C
BU2527A
4
3.5
3
ts, tf / us
1
IC/IB = 5
3
0.1
2.5
2
1.5
1
0.5
5A
IC =
6A
0.01
0.1
1
IC / A
10
100
0
0
0.2 0.4 0.6 0.8
1 1.2 1.4 1.6 1.8
IB / A
2
Fig.9. Typical collector-emitter saturation voltage.
V
CE
sat = f (I
C
); parameter I
C
/I
B
Fig.12. Typical collector storage and fall time.
ts = f (I
B
); tf = f (I
B
); parameter I
C
; T
j
= 85˚C; f = 64 kHz
September 1997
4
Rev 1.200
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527AF
120
110
100
90
80
70
60
50
40
30
20
10
0
PD%
Normalised Power Derating
with heatsink compound
IC / A
100
BU2525AF
tp =
ICM
= 0.01
40 us
ICDC
10
100 us
0
20
40
60
80
Ths / C
100
120
140
Fig.13. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
= f (T
hs
)
Ptot
1
10
Zth / (K/W)
BU2525AF
1 ms
1
0.5
0.2
0.1
0.05
0.02
0.1
10 ms
DC
P
D
t
p
D=
t
p
T
0.1
0.01
D=0
0.001
1E-06
1E-04
1E-02
t/s
0.01
T
t
1
10
100
1000 VCE / V
1E+00
Fig.14. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
Fig.15. Forward bias safe operating area. T
hs
= 25 ˚C
I
CDC
& I
CM
= f(V
CE
); I
CM
single pulse; parameter t
p
Second-breakdown limits independant of temperature.
Mounted with heatsink compound.
IC / A
30
BU2527AF
20
10
0
0
500
VCE / V
1000
1500
Fig.16. Reverse bias safe operating area. T
j
≤
T
jmax
September 1997
5
Rev 1.200
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