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JST260D

Description
Triac Chip
File Size211KB,2 Pages
ManufacturerJie Jie Semiconductor
Websitehttp://www.jiejie-cn.com/
Download Datasheet View All

JST260D Overview

Triac Chip

JST260D/E/F
型四象限双向晶闸管芯片
(芯片代码:CP309)
○ 芯片特征:单面台面结构,台面玻璃钝化工艺,背面三层金属电极。
T
2
T
1
○ 芯片尺寸:2.6mm×2.6mm
○ 可替换型号:BT137
G
○产品极限参数
(封装成
TO-220
后,除非另有规定,T
CASE
=25℃)
JST260D/E 芯片结构图 单½(um)
参数名称
结温范围
正向断态重复峰值电压
反向断态重复峰值电压
通态均方根电流
通态浪涌电流
I
2
t
T
C
=100℃
tp=20mS
tp=16.7mS
tp=10mS
I
2
t
di/dt
符 号
Tj
V
DRM
V
RRM
I
T
RMS
I
TSM
单 ½
V
V
A
A
A
2
S
A/uS
-40½125
600/800
600/800
8
65
71
21
50
通态电流临界上升率
I
G
=2×I
GT
,tr≤100ns, F=50Hz
门极峰值电流
门极平均功率
Tj=125℃
Tj=125℃
I
GM
P
G
AV
2
0.5
A
W
产品电性½
(封装成
TO-220
后,除非另有规定,T
CASE
=25℃)
特性和测试条件
D
通态峰值电压
I
TM
=10A,tp=380uS
正向断态峰值电流
V
D
=V
DRM
反向断态峰值电流
V
R
=V
RRM
门极触发电压
门极不触发电压
V
D
=V
DRM
, R
L
=3.3KΩ,
门极触发电流
Tj=125℃
I
GT
(Ⅰ-Ⅱ-Ⅲ)
E
≤1.65
≤5
≤1
≤5
≤1
≤1.3
≥0.2
F
单 ½
V
TM
I
DRM1
I
DRM2
I
RRM1
I
RRM2
V
GT
V
GD
V
uA
mA
uA
mA
V
V
T
C
=25℃
T
C
=125℃
T
C
=25℃
T
C
=125℃
V
D
=12V, R
L
=30Ω
V
D
=12V, R
L
=30Ω
≤5
≤10
≤15
≤20
≤10
≥5
≤10
≤25
≤30
≤40
≤25
≥10
≤35
≤70
≤40
≤60
≤30
≥50
mA
擎½电流
I
G
= 1.2I
GT
维持电流
I
T
=0.2A
断态电压临界上升率
V
D
=2/3V
DRM
, Tj=125℃,R
GK
=1KΩ
I
L
(Ⅰ-Ⅲ-Ⅳ)
I
L
(Ⅱ)
I
H
dV/dt
mA
mA
V/uS
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