JIEJIE MICROELECTRONICS CO. , Ltd
JX007 Series
DESCRIPTION:
The JX007 SCR series provide high dv/dt rate
with strong resistance to electromagnetic interface.
They are especially recommended for use on
residual current circuit breaker, straight hair, igniter
etc.
0.8A Sensitive SCRs
Rev.2.0
2
1
13
2
TO-92
3
SOT-23-3L
MAIN FEATURES
Symbol
I
T(RMS)
I
GT
V
DRM
/V
RRM
Value
0.8
≤200
600
Unit
A
μA
V
G(3)
A(2)
K(1)
ABSOLUTE MAXIMUM RATINGS
Parameter
Storage junction temperature range
Operating junction temperature range
Repetitive peak off-state voltage
Repetitive peak reverse voltage
TO-92/ SOT-23-3L
(T
C
=60℃)
Non repetitive surge peak on-state current
(tp=10ms)
RMS on-state current
I
2
t value for fusing (tp=10ms)
Critical rate of rise of on-state current
Peak gate current (tp=20μs, Tj=110℃)
Peak gate power (tp=20μs, Tj=110℃)
Average gate power dissipation(T
j
=110℃)
Symbol
T
stg
T
j
V
DRM
V
RRM
I
T(RMS)
I
TSM
I
2
t
dI/dt
I
GM
P
GM
P
G(AV)
Value
-40-150
-40-110
600
600
0.8
8
0.32
50
0.2
0.5
0.1
Unit
℃
℃
V
V
A
A
A
2
s
A/μs
A
W
W
TEL
：+86-513-83639777
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JX007 Series
JieJie Microelectronics CO. , Ltd
ELECTRICAL CHARACTERISTICS
(T
j
=25
℃
unless otherwise specified
)
Value
Symbol
I
GT
V
GT
V
GD
I
L
I
H
dV/dt
Test Condition
MIN.
-
V
D
=12V R
L
=33Ω
V
D
=V
DRM
T
j
=110℃
I
G
=1.2 I
GT
I
T
=0.05A
V
D
=2/3V
DRM
T
j
=110℃ R
GK
=1KΩ
-
0.2
-
-
10
TYP.
30
0.6
-
-
-
-
MAX.
200
0.8
-
5
3
-
μA
V
V
mA
mA
V/μs
Unit
STATIC CHARACTERISTICS
Symbol
V
TM
I
DRM
I
RRM
I
T
=1A tp=380μs
V
D
=V
DRM
V
R
=V
RRM
Parameter
T
j
=25℃
T
j
=25℃
T
j
=110℃
Value(MAX)
1.5
5
100
Unit
V
μA
μA
THERMAL RESISTANCES
Symbol
R
th(j-c)
junction to case
Parameter
TO-92/ SOT-23-3L
Value
75
Unit
℃/W
ORDERING INFORMATION
J
JieJie Microelectronics Co.,Ltd
X
007
U
U:TO-92 L:SOT-23-3L
Sensitive gate SCRs
I
T(RMS)
:0.8A
TEL
：+86-513-83639777
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http://www.jjwdz.com
JX007 Series
FIG.3:
Surge peak on-state current versus
number of cycles
I
TSM
(A)
8
tp=10ms
One cycle
JieJie Microelectronics CO. , Ltd
FIG.4:
On-state characteristics (maximum
values)
I
TM
(A)
8
Tj=Tjmax
6
1
4
Tj=25℃
2
0
1
Number of cycles
100
0.1
0
V
TM
(V)
3
10
1000
1
2
4
5
FIG.5:
Non-repetitive surge peak on-state current
for a sinusoidal pulse with width tp<10ms, and
corresponging value of I
2
t
I
TSM
(A), I
2
t (A
2
s)
100
FIG.6:
Relative variations of gate trigger
current, holding current and latching current
versus junction temperature
I
GT
,I
H
,I
L
(Tj)/I
GT
,I
H
,I
L
(Tj=25℃)
3.0
2.5
I
TSM
10
2.0
1.5
I
GT
I
H
&I
L
1
I
2
t
0.1
0.01
tp(ms)
0.1
1
10
1.0
0.5
0.0
-40
Tj(℃)
0
40
80
120
Information furnished in this document is believed to be accurate and reliable.
However, Jiangsu JieJie Microelectronics Co.,Ltd assumes no responsibility for the
consequences of use without consideration for such information nor use beyond it.
Information mentioned in this document is subject to change without notice, apart
from that when an agreement is signed, Jiangsu JieJie complies with the agreement.
Products and information provided in this document have no infringement of patents.
Jiangsu JieJie assumes no responsibility for any infringement of other rights of third
parties which may result from the use of such products and information.
This document is the second version which is made in 18-Nov.-2014. This document
supersedes and replaces all information previously supplied.
is a registered trademark of Jiangsu JieJie Microelectronics Co.,Ltd.
Copyright
©
2014 Jiangsu JieJie Microelectronics Co.,Ltd. Printed All rights reserved.
TEL
：+86-513-83639777
- 4 / 4-
http://www.jjwdz.com
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