JMnic
Product Specification
Silicon NPN Power Transistors
2SC5003
DESCRIPTION
・With
TO-3PML package
・High
voltage switching transistor
・Built-in
damper diode
APPLICATIONS
・Display
horizontal deflection output;
switching regulator and general purpose
PINNING
PIN
1
2
3
Base
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
1500
800
6
7
14
3.5
80
150
-55~150
UNIT
V
V
V
A
A
A
W
℃
℃
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5003
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
(BR)EBO
V
CEsat
V
BEsat
I
CBO1
I
CBO2
I
CEO
I
EBO
h
FE-1
h
FE-2
V
FEC
f
T
C
OB
PARAMETER
Base-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Forward voltage
Transition frequency
Output capacitance
CONDITIONS
I
EB
=300mA; I
B
=0
I
C
=5A;I
B
=1.2A
I
C
=5A;I
B
=1.2A
V
CB
=1200V; I
E
=0
V
CB
=1500V; I
E
=0
V
CE
=800V; I
E
=0
V
EB
=6V; I
C
=0
I
C
=1A ; V
CE
=5V
I
C
=5A ; V
CE
=5V
I
EC
=7A
I
E
=-0.5A ; V
CE
=12V
V
CB
=10V;f=1MHz
4
100
8
4
9
2.0
V
MHz
pF
MIN
6
5
1.5
100
1
1
100
TYP.
MAX
UNIT
V
V
V
μA
mA
mA
μA
Switching times
t
stg
t
f
Storage time
Fall time
I
C
=4A;I
B1
=0.8A;
I
B2
=-1.6A;R
L
=50Ω
V
CC
=200V
4.0
0.2
μs
μs
2
JMnic
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC5003
Fig.2 Outline dimensions
3
JMnic
Product Specification
Silicon NPN Power Transistors
2SC5003
4
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