2N7002H
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
60V
R
DS(ON)
max
7.5Ω @ V
GS
= 5V
I
D
max
T
A
= +25°C
210mA
Features and Benefits
N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(R
DS(on)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Weight: 0.008 grams (Approximate)
Motor Control
Power Management Functions
D
SOT23
D
G
S
Top View
Equivalent Circuit
G
S
Top View
Ordering Information
(Note 4)
Part Number
2N7002H-7
2N7002H-13
Notes:
Case
SOT23
SOT23
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
H7H = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
H7H
Date Code Key
Year
Code
Month
Code
Jan
1
2014
B
Feb
2
2015
C
Mar
3
Apr
4
YM
2016
D
May
5
2017
E
Jun
Jul
6
7
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2018
F
Aug
8
2019
G
Sep
9
2020
H
Oct
O
Nov
N
2021
I
Dec
D
July 2015
2N7002H
Document number: DS38025 Rev. 1 - 2
© Diodes Incorporated
2N7002H
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Steady
State
Continuous
Pulsed
T
A
= +25°C
T
A
= +85°C
T
A
= +100°C
T
A
= +25°C
T
A
= +85°C
T
A
= +100°C
Continuous
Pulsed
Symbol
V
DSS
V
GSS
I
D
Value
60
±20
±40
170
120
105
210
150
135
0.5
2
500
Units
V
V
mA
Continuous Drain Current (Note 5) V
GS
= 10V
Continuous Drain Current (Note 6) V
GS
= 10V
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
I
D
I
S
I
DM
mA
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
(Note 5)
(Note 6)
(Note 5)
(Note 6)
Symbol
P
D
R
JA
T
J,
T
STG
Value
370
510
341
249
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
V
SD
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
D(on)
t
r
t
D(off)
t
f
t
rr
Q
rr
Min
60
2.0
-
-
Typ
3.0
0.78
26
2.8
2.1
352
203
123
3.7
2.9
8.4
4.7
9.3
3.5
Max
1.0
±100
3.0
7.5
1.5
-
-
Unit
V
µA
nA
V
Ω
V
pF
pF
pF
pC
Test Condition
V
GS
= 0V, I
D
= 10µA
V
DS
= 60V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 5.0V, I
D
= 0.05A
V
GS
= 0V, I
S
= 115mA
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
V
DS
= 10V, I
D
= 250mA
ns
V
DD
= 30V, I
D
= 0.2A,
R
L
= 150Ω, V
GEN
= 10V,
R
GEN
= 25Ω
I
S
= 0.5A, dI/dt = 100A/μs
I
S
= 0.5A, dI/dt = 100A/μs
ns
nC
5. Device mounted on FR-4 PCB, with minimum recommended pad layout.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2N7002H
Document number: DS38025 Rev. 1 - 2
2 of 6
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July 2015
© Diodes Incorporated
2N7002H
1.0
0.9
0.8
V
GS
= 10V
V
GS
= 8.0V
0.5
0.4
V
DS
= 5.0V
I
D
, DRAIN CURRENT (A)
0.7
0.6
0.5
0.4
0.3
I
D
, DRAIN CURRENT (A)
V
GS
= 6.0V
V
GS
= 5.0V
0.3
0.2
T
A
= 150
C
V
GS
= 4.5V
0.2
0.1
0.0
0
0.5
1 1.5 2 2.5 3 3.5
4 4.5
V
DS
, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
5
V
GS
= 3.5V
V
GS
= 4.0V
0.1
T
A
= 125
C
T
A
= 85
C
T
A
= 25
C
T
A
= -55 C
0
0
2
3
4
5
6
7
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1
8
10
10
R
D S(ON )
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
9
8
7
6
5
4
3
2
1
0
0
0.1
0.2
0.3
0.4
I
D
, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0.5
V
GS
= 5.0V
9
8
7
6
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
I
D
= 50mA
5
2.5
V
GS
= 5V
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
4
R
DS(ON)
, DRAIN-SOURCE
O N-RESI STANCE (NORMALIZED)
2
V
GS
= 10 V
I
D
= 1 00 mA
3
T
A
= 150
C
T
A
= 125
C
T
A
= 85
C
T
A
= 25
C
1.5
2
1
V
GS
= 5V
I
D
= 50mA
1
T
A
= -55
C
0.5
0
0
0.1
0.2
0.3
I
D
, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
0.4
0
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
2N7002H
Document number: DS38025 Rev. 1 - 2
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July 2015
© Diodes Incorporated
2N7002H
5
5
R
D S(on)
, DRAIN-SOURCE ON-RESISTANCE (
)
4
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
4
I
D
= 250µA
3
V
GS
= 5V
I
D
= 50mA
3
2
V
GS
= 10V
2
I
D
= 1mA
1
I
D
= 100mA
1
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
0
-50
-25
0
25
50
75
100
125
150
0.5
T
A
, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
100
f = 1MHz
C
T
, JUNCTION CAPACITANCE (pF)
I
S
, SOURCE CURRENT (A)
0.4
C
iss
0.3
T
A
= 150°C
T
A
= 85°C
10
C
oss
0.2
T
A
= 125
C
T
A
= 25
C
0.1
T
A
= -55
C
C
rss
0
0
0.3
0.6
0.9
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1.5
1
0
5
10
15
20
25
30
35
40
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
10
R
DS(on)
Limited
P
W
= 100µs
10
V
GS
GATE THRESHOLD VOLTAGE (V)
8
I
D
, DRAIN CURRENT (A)
1
6
V
DS
= 10V
I
D
= 250mA
0.1
DC
P
W
= 10s
P
W
= 1s
4
0.01
T
J(m ax)
= 150°C
T
A
= 25°C
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
V
GS
= 10V
Single Pulse
DUT on 1 * MRP Board
0.001
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
2N7002H
Document number: DS38025 Rev. 1 - 2
4 of 6
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July 2015
© Diodes Incorporated
2N7002H
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
r(t), TRANSIENT THERMAL RESISTANCE
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
R
JA
(t) = r(t) * R
JA
R
JA
= 346°C/W
Duty Cycle, D = t1/ t2
0.0001
0.001
0.01
0.1
1
10
100
1000
Single Pulse
0.001
0.000001
0.00001
t1, PULSE DURATION TIMES (sec)
Figure 15 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
H
J
All 7°
GAUGE PLANE
0.25
K1
K
a
A
M
L
L1
C
B
D
F
G
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
C
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
X
E
2N7002H
Document number: DS38025 Rev. 1 - 2
5 of 6
www.diodes.com
July 2015
© Diodes Incorporated
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