(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Operating Junction Temperature
Storage Temperature
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
30
15
I
FRM
60
30
I
FSM
100
T
J
T
stg
dv/dt
−40 to +150
−40 to +150
10,000
°C
°C
V/ms
A
A
Value
100
Unit
V
A
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Rating
Maximum Thermal Resistance
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
Value
2.0
70
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(Per Leg unless otherwise noted)
Rating
Maximum Instantaneous Forward Voltage (Note 1)
(I
F
= 5 A, T
J
= 25°C)
(I
F
= 7.5 A, T
J
= 25°C)
(I
F
= 15 A, T
J
= 25°C)
(I
F
= 5 A, T
J
= 125°C)
(I
F
= 7.5 A, T
J
= 125°C)
(I
F
= 15 A, T
J
= 125°C)
Maximum Instantaneous Reverse Current (Note 1)
(V
R
= 70 V, T
J
= 25°C)
(V
R
= 70 V, T
J
= 125°C)
(Rated dc Voltage, T
J
= 25°C)
(Rated dc Voltage, T
J
= 125°C)
I
R
11.2
7.9
63
19.1
500
35
Symbol
v
F
0.509
0.575
0.751
0.471
0.539
0.662
−
−
1.05
−
−
0.82
mA
mA
mA
mA
Typ
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300
ms,
Duty Cycle
≤
2.0%
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2
NTSV30100CT
TYPICAL CHARACTERISTICS
100
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
T
A
= 150°C
10
T
A
= 125°C
1
I
R
, INSTANTANEOUS REVERSE
CURRENT (mA)
100
T
A
= 150°C
10
T
A
= 125°C
1
T
A
= 25°C
0.1
0.01
T
A
= 25°C
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
0.001
20
30
40
50
60
70
80
90
100
V
R
, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
10,000
C, JUNCTION CAPACITANCE (pF)
I
F(AV)
, AVERAGE FORWARD
CURRENT (A)
T
J
= 25°C
30
Figure 2. Typical Reverse Characteristics
R
qJC
= 1.3°C/W
25
20
15
10
5
0
Square Wave
dc
1000
100
10
0.1
1
10
100
V
R
, REVERSE VOLTAGE (V)
0
20
40
60
80
100
120
140
T
C
, CASE TEMPERATURE (°C)
Figure 3. Typical Junction Capacitance
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
60
55
50
45
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
120
140
T
C
, CASE TEMPERATURE (°C)
Square Wave
30
R
qJC
= 1.3°C/W
dc
P
F(AV)
, AVERAGE FORWARD POW-
ER DISSIPATION (W)
25
20
15
Figure 4. Current Derating per Leg
I
PK
/I
AV
= I
PK
/I
AV
= 10
20
I
PK
/I
AV
= 5
Square Wave
dc
10
5
T
J
= 150°C
0
0
2
4
6
8
10
12
14
16
18
20
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
NTSV30100CT
TYPICAL CHARACTERISTICS
10
R(t), TYPICAL TRANSIENT THER-
MAL RESISTANCE (°C/W)
1 50%
20%
10%
0.1 5%
2%
1%
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
10
100
1000
0.01
t, PULSE TIME (sec)
Figure 7. Typical Transient Thermal Response
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4
NTSV30100CT
PACKAGE DIMENSIONS
TO−220
CASE 221A−09
ISSUE AH
−T−
B
4
SEATING
PLANE
F
T
S
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
Z
INCHES
MIN
MAX
0.570
0.620
0.380
0.415
0.160
0.190
0.025
0.038
0.142
0.161
0.095
0.105
0.110
0.161
0.014
0.024
0.500
0.562
0.045
0.060
0.190
0.210
0.100
0.120
0.080
0.110
0.045
0.055
0.235
0.255
0.000
0.050
0.045
---
---
0.080
MILLIMETERS
MIN
MAX
14.48
15.75
9.66
10.53
4.07
4.83
0.64
0.96
3.61
4.09
2.42
2.66
2.80
4.10
0.36
0.61
12.70
14.27
1.15
1.52
4.83
5.33
2.54
3.04
2.04
2.79
1.15
1.39
5.97
6.47
0.00
1.27
1.15
---
---
2.04
Q
1 2 3
A
U
K
H
Z
L
V
G
D
N
R
J
STYLE 6:
PIN 1.
2.
3.
4.
ANODE
CATHODE
ANODE
CATHODE
ON Semiconductor and the
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