®
STPR120A
HIGH EFFICIENCY FAST RECOVERY DIODE
MAIN PRODUCT CHARACTERISTICS
I
F(AV)
V
RRM
t
rr
(max)
FEATURES AND BENEFITS
n
n
n
n
1A
200 V
35 ns
VERY LOW SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
SURFACE MOUNT DEVICE
FAST RECTIFIER EPITAXIAL DIODE
SMA
DESCRIPTION
Single chip rectifier suited to Switched Mode
Power Supplies and high frequency DC/DC con-
verters.
Packaged in SMA, this surface mount device is in-
tended for use in low voltage, high frequency in-
verters, free wheeling and polarity protection
applications.
ABSOLUTE RATINGS (limiting values)
Symbol
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
RMS forward current
Average forward current
Surge non repetitive forward current
Storage temperature range
Maximum junction temperature
T
Lead
= 125°C
δ
= 0.5
tp = 10 ms
Sinusoidal
Parameter
Repetitive peak reverse voltage
Value
200
8
1
30
- 65 to + 150
150
Unit
V
A
A
A
°C
°C
THERMAL RESISTANCES
Symbol
R
th (j-l)
Junction to lead
Parameter
Value
30
Unit
°C/W
April 2000 - Ed: 3
1/5
STPR120A
STATIC ELECTRICAL CHARACTERISTICS
Symbol
I
R
*
Tests Conditions
Reverse leakage current
Tests Conditions
Tj = 25°C
Tj = 125°C
V
F
**
Forward voltage drop
Tj = 25°C
Tj = 150°C
Pulse test :
* tp = 5ms,
δ
< 2%
** tp = 380
µs, δ
< 2%
Min.
Typ.
Max.
3
Unit
µA
V
R
= V
RRM
180
I
F
= 1 A
I
F
= 1 A
0.69
400
0.94
0.74
V
RECOVERY CHARACTERISTICS
Symbol
trr
Tj = 25°C
Tests Conditions
I
F
= 0.50 A
I
R
= 1 A
I
F
= 1 A
V
R
= V
RRM
t
FR
V
FP
Tj = 25°C
Tj = 25°C
I
rr
= 0.25 A
dI
F
/dt = 50 A/µs
25
Min.
Typ.
Max.
25
35
25
5
V
Unit
ns
I
F
= 1 A
dI
F
/dt = 100 A/µs
Measured at 1 V
I
F
= 1 A
dI
F
/dt = 100 A/µs
To evaluate the maximum conduction losses use the following equation :
P = 0.62 x I
F(AV)
+ 0.12 x I
F2(RMS)
2/5
STPR120A
Fig. 1:
Average forward power dissipation versus
average forward current.
PF(av)(W)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0.0
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
Fig. 2:
Peak current versus form factor.
IM(A)
10
9
8
7
6
5
4
3
2
1
0
0.0
P=1.5W
δ
=1
P=1.0W
P=0.5W
P=0.25W
IF(av) (A)
0.2
0.4
0.6
0.8
1.0
1.2
δ
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
Fig. 3:
Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Fig. 4:
Non repetitive surge peak forward current
versus overload duration.
IM(A)
6
Rth(j-a)=Rth(j-l)
5
4
Rth(j-a)=120°C/W
Ta=25°C
3
2
1
t(s)
Ta=100°C
Ta=125°C
Tamb(°C)
0
25
50
75
100
125
150
0
1E-3
1E-2
1E-1
1E+0
Fig. 5:
Variation of thermal impedance junction to
ambient versus pulse duration (Recommended
pad layout, epoxy FR4, e(Cu)=35µm).
Fig. 6:
Forward voltage drop versus forward cur-
rent (maximum values).
Zth(j-a)(°C/W)
200
100
IFM(A)
50.00
10.00
Tj=150°C
1.00
10
Single pulse
Tj=25°C
0.10
tp(s)
VFM(V)
1E+1
1E+2 5E+2
1
1E-3
1E-2
1E-1
1E+0
0.01
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3/5
STPR120A
Fig. 7:
Junction capacitance versus reverse
voltage applied (typical values).
C(pF)
20
F=1MHz
Tj=25°C
Fig. 8:
Recovery charges versus d
IF/
dt
QRR(nC)
200
IF=2A
90% confidence
Tj=125°C
10
5
100
50
2
VR(V)
1
1
10
100
200
20
dIF/dt(A/µs)
10
10
20
50
100
200
500
Fig. 9:
Peak reverse recovery current versus d
IF
/dt.
Fig. 10:
Dynamic parameters versus junction tem-
perature.
QRR; IRM[Tj] / QRR; IRM[Tj=125°C]
1.25
IRM(A)
20.0
10.0
IF=2A
90% confidence
Tj=125°C
1.00
IRM
1.0
0.75
QRR
0.50
dIF/dt(A/µs)
0.1
10
20
50
100
200
500
0.25
0
25
50
Tj(°C)
75
100
125
150
4/5
STPR120A
PACKAGE MECHANICAL DATA
SMA
DIMENSIONS
E1
REF.
Millimeters
Min.
Max.
2.70
0.20
1.65
0.41
5.60
4.60
2.95
1.60
Inches
Min.
0.075
0.002
0.049
0.006
0.189
0.156
0.089
0.030
Max.
0.106
0.008
0.065
0.016
0.220
0.181
0.116
0.063
D
A1
A2
b
1.90
0.05
1.25
0.15
4.80
3.95
2.25
0.75
E
c
E
A1
E1
C
L
A2
D
b
L
FOOT PRINT
(in millimeters)
n
n
n
1.65
n
Marking
: R12
Cathode band is inked
Epoxy meets UL94-V0
Weight: 0.06g
1.45
2.40
1.45
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-
proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2000 STMicroelectronics - Printed in Italy - All rights reserved.
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