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ZXT2MATA

Description
Power Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, GREEN, PLASTIC, DFN322, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size155KB,7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance  
Download Datasheet Parametric Compare View All

ZXT2MATA Overview

Power Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, GREEN, PLASTIC, DFN322, 3 PIN

ZXT2MATA Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
Objectid1077780898
Parts packaging codeDFN
package instructionGREEN, PLASTIC, DFN322, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Shell connectionCOLLECTOR
Maximum collector current (IC)3.5 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
Minimum DC current gain (hFE)15
JESD-30 codeR-PBCC-N3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)2.45 W
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)180 MHz
A Product Line of
Diodes Incorporated
ZXT2MA
20V PNP LOW SATURATION SWITCHING TRANSISTOR
Features and Benefits
BV
CEO
> -20V
I
C
= -3.5A Continuous Collector Current
Low Saturation Voltage (-220mV @ -1A)
R
SAT
= 64 mΩ for a low equivalent On-Resistance
h
FE
specified up to -6A for high current gain hold up
R
θ
JA
efficient, 60% lower than SOT23
2
4mm footprint, 50% smaller than SOT23
Lead Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: DFN322
Case material: Molded Plastic. “Green” Molding Compound.
Terminals: Matte Tin Finish.
Nominal package height: 0.85mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.01 grams (approximate)
Applications
MOSFET Gate Driving
DC-DC Converters
Charging Circuits
Power switches
Motor Control
DFN322
C
B
B
E
E
C
Bottom View
Pin Out
Top View
Bottom View
Device Symbol
Ordering Information
(Note 3)
Product
ZXT2MATA
ZXT2MATC
Notes:
Marking
S2
S2
Reel size (inches)
7
13
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
S2
S2 = Product Type Marking code
Top View
ZXT2MA
Document Number: DS35302
Rev. 1 - 2
1 of 7
www.diodes.com
April 2011
© Diodes Incorporated

ZXT2MATA Related Products

ZXT2MATA ZXT2MATC
Description Power Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, GREEN, PLASTIC, DFN322, 3 PIN Power Bipolar Transistor, 3.5A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, GREEN, PLASTIC, DFN322, 3 PIN
Is it lead-free? Lead free Lead free
Is it Rohs certified? conform to conform to
Objectid 1077780898 1077780899
Parts packaging code DFN DFN
package instruction GREEN, PLASTIC, DFN322, 3 PIN GREEN, PLASTIC, DFN322, 3 PIN
Contacts 3 3
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 3.5 A 3.5 A
Collector-emitter maximum voltage 20 V 20 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 15 15
JESD-30 code R-PBCC-N3 R-PBCC-N3
JESD-609 code e3 e3
Humidity sensitivity level 1 1
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) 260 260
Polarity/channel type PNP PNP
Maximum power dissipation(Abs) 2.45 W 2.45 W
surface mount YES YES
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM
Maximum time at peak reflow temperature 40 40
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 180 MHz 180 MHz
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