DATA SHEET
µ
PC8106TB,
µ
PC8109TB
SILICON MMIC 2.0 GHz FREQUENCY UP-CONVERTER
FOR CELLULAR/CORDLESS TELEPHONES
BIPOLAR ANALOG INTEGRATED CIRCUITS
DESCRIPTION
The
µ
PC8106TB and
µ
PC8109TB are silicon monolithic integrated circuit designed as frequency up-converter for
cellular/cordless telephone transmitter stage. The
µ
PC8106TB features improved intermodulation and
µ
PC8109TB
features low current consumption. From these two version, you can chose either IC corresponding to your system
design. These TB suffix ICs which are smaller package than conventional T suffix ICs contribute to reduce your
system size.
The
µ
PC8106TB and
µ
PC8109TB are manufactured using NEC’s 20 GHz f
T
NESAT
TM
III silicon bipolar process.
This process uses a silicon nitride passivation film and gold electrodes. These materials can protect chip surface
from external pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and
reliability.
FEATURES
• Recommended operating frequency : f
RFout
= 0.4 GHz to 2.0 GHz, f
IFin
= 100 MHz to 400 MHz
• Supply voltage
• High-density surface mounting
• Low current consumption
• Minimized carrier leakage
• Built-in power save function
: V
CC
= 2.7 to 5.5 V
: 6-pin super minimold package
: I
CC
= 9 mA TYP. @
µ
PC8106TB
I
CC
= 5 mA TYP. @
µ
PC8109TB
: Due to double balanced mixer
APPLICATION
• Cellular/cordless telephone up to 2.0 GHz MAX (example: PHS, PDC, DCS1800 and so on)
ORDERING INFORMATION
Part Number
Markings
C2D
C2G
Product Type
High IP
3
Low current consumption
Package
6-pin super
minimold
Supplying Form
Embossed tape 8 mm wide.
Pin 1, 2, 3 face to tape perforation side.
QTY 3 kp/Reel.
µ
PC8106TB-E3
µ
PC8109TB-E3
Remark
To order evaluation samples, please contact your local NEC sales office.
(Part number for sample order:
µ
PC8106TB,
µ
PC8109TB)
Caution Electro-static sensitive devices
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P12770EJ2V0DS00 (2nd edition)
Date Published April 1999 N CP(K)
Printed in Japan
©
1997, 1999
µ
PC8106TB,
µ
PC8109TB
PIN CONNECTIONS
(Top view)
(Bottom view)
Pin No.
1
3
2
1
Pin Name
IFinput
GND
LOinput
PS
V
CC
RFoutput
3
2
1
C2D
4
5
6
4
5
6
2
3
4
5
6
Marking is an example of
µ
PC8106TB.
SERIES PRODUCTS (T
A
= +25
°
C, V
CC
= V
PS
= V
RFout
= 3.0 V, Z
L
= Z
S
= 50
Ω
)
I
CC
(mA)
9
5
16.5
CG1
(dB)
9
6
9
CG2
(dB)
7
4
5.5
P
O(sat)
1
(dBm)
−2
−5.5
0.5
P
O(sat)
2
(dBm)
−4
−7.5
–2
OIP
3
1
(dBm)
+5.5
+1.5
+9.5
OIP
3
2
(dBm)
+2.0
−1.0
+6
TYPE
High IP
3
Low power consumption
Higher IP
3
PRODUCT NAME
V
CC
(V)
2.7 to 5.5
2.7 to 5.5
2.7 to 3.3
µ
PC8106TB
µ
PC8109TB
µ
PC8163TB
Caution The above table lists the typical performance of each model. See ELECTRICAL CHARACTER-
ISTICS for the test conditions.
BLOCK DIAGRAM (FOR THE
µ
PC8106TB AND
µ
PC8109TB)
(Top view)
LO input
GND
IF input
PS
V
CC
RF output
2
Data Sheet P12770EJ2V0DS00
µ
PC8106TB,
µ
PC8109TB
SYSTEM APPLICATION EXAMPLES (SCHEMATICS OF IC LOCATION IN THE SYSTEMS)
PHS, DECT
DEMO.
I
Q
RX
VCO
SW
÷N
PLL
PLL
I
0°
TX
PA
µ
PC8106TB
Phase
shifter
90°
Q
Analog cellular telephone
FM
RX
DEMO.
VCO
SW
÷N
PLL
PLL
TX
PA
MOD.
µ
PC8109TB
Data Sheet P12770EJ2V0DS00
3
µ
PC8106TB,
µ
PC8109TB
PIN FUNCTIONS (FOR THE
µ
PC8106TB AND
µ
PC8109TB)
Applied
Voltage
(V)
−
Pin
Voltage
Note
(V)
1.3
Pin
No.
1
Pin
Name
IFinput
Function and Explanation
Equivalent Circuit
This pin is IF input to double balanced
mixer (DBM). The input is designed as
high impedance. The circuit contri-
butes to suppress spurious signal.
Also this symmetrical circuit can keep
specified performance insensitive to
process-condition distribution. For
above reason, double balanced mixer
is adopted.
GND pin. Ground pattern on the board
should be formed as wide as possible.
Track Length should be kept as short
as possible to minimize ground
impedance.
Local input pin. Recommendable input
level is
−10
to 0 dBm.
Supply voltage pin.
This pin is RF output from DBM. This
pin is designed as open collector. Due
to the high impedance output, this pin
should be externally equipped with LC
matching circuit to next stage.
Power save control pin. Bias controls
operation as follows.
Pin bias
V
CC
GND
Control
Operation
Power Save
5
6
3
2
GND
0
−
1
3
LOinput
−
2.4
−
−
2
5
6
V
CC
2.7 to 5.5
RFoutput Same bias
as V
CC
through
external
inductor
PS
V
CC
/GND
4
−
V
CC
5
4
GND
2
Note
Each pin voltage is measured with V
CC
= V
PS
= V
RFout
= 3.0 V.
4
Data Sheet P12770EJ2V0DS00
µ
PC8106TB,
µ
PC8109TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Votage
PS pin Input Voltage
Power Dissipation of
Package
Symbol
V
CC
V
PS
P
D
Test Conditions
T
A
= +25 °C, Pin 5 and 6
T
A
= +25 °C
Mounted on double-sided copper-clad 50
×
50
×
1.6 mm epoxy glass PWB
T
A
= +85 °C
Rating
6.0
6.0
200
Unit
V
V
mW
Operating Ambient Temperature
Storage Temperature
Maximum Input Power
T
A
T
stg
P
in
−40
to +85
−55
to +150
+10
°C
°C
dBm
RECOMMENDED OPERATING CONDITIONS
Parameter
Supply Voltage
Symbol
V
CC
MIN.
2.7
−40
−10
0.4
100
TYP.
3.0
MAX.
5.5
Unit
V
Note
The same voltage should be supplied to
pin 5 and 6
Operating Ambient Temperature
Local Input Level
RF Output Frequency
IF Input Frequency
T
A
P
LOin
f
RFout
f
IFin
+25
−5
−
−
+85
0
2.0
400
°C
dBm
GHz
MHz
Z
S
= 50
Ω
(without matching)
With external matching circuit
ELECTRICAL CHARACTERISTICS
(T
A
= +25 °C, V
CC
= V
RFout
= 3.0 V, f
IFin
= 240 MHz, P
LOin
=
−
5 dBm, and V
PS
≥
2.7 V unless otherwise
specified)
µ
PC8106TB
Parameter
Circuit Current
Circuit Current in Power-
save Mode
Conversion Gain 1
Conversion Gain 2
Maximum RF Output Power 1
Maximum RF Output Power 2
Symbol
I
CC
I
CC
(PS)
No signal
V
PS
= 0 V
f
RFout
= 0.9 GHz, P
IFin
=
−30
dBm
f
RFout
= 1.9 GHz, P
IFin
=
−30
dBm
f
RFout
= 0.9 GHz, P
IFin
= 0 dBm
f
RFout
= 1.9 GHz, P
IFin
= 0 dBm
Conditions
MIN.
4.5
−
TYP.
9
−
MAX.
13.5
10
MIN.
2.5
−
TYP.
5
−
MAX.
8.0
10
mA
µ
PC8109TB
Unit
µ
A
dB
dB
dBm
dBm
CG1
CG2
P
O(sat)
1
P
O(sat)
2
6
4
−4
−6.5
9
7
−2
−4
12
10
−
−
3
1
−7.5
−10
6
4
−5.5
−7.5
9
7
−
−
Data Sheet P12770EJ2V0DS00
5
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