(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature (Note 1)
Voltage Rate of Change (Rated V
R
)
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
Tstg
T
J
dv/dt
Value
40
Unit
V
5
10
190
−65
to +150
−65
to +150
10,000
A
A
A
°C
°C
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dP
D
/dT
J
< 1/R
qJA
.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Lead (Note 2)
Thermal Resistance,
Junction−to−Ambient (Note 2)
2. Rating applies when surface mounted on the minimum pad size recommended.
Symbol
R
qJL
R
qJA
Value
12
111
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 5.0 A, T
C
= 25°C)
Maximum Instantaneous Reverse Current (Note 3)
(Rated dc Voltage, T
C
= 25°C)
(Rated dc Voltage, T
C
= 100°C)
Symbol
V
F
i
R
Value
0.50
0.3
15
Unit
V
mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2.0%.
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MBRS540P
TYPICAL CHARACTERISTICS
10
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
i
F
, INSTANTANEOUS FORWARD
CURRENT (A)
10
T
J
= 125°C
1
T
J
= 125°C
1
T
J
= 100°C
T
J
= 25°C
T
J
=
−40°C
T
J
=
−55°C
0.20
0.30
0.40
0.50
0.60
0.70
V
F
, MAXIMUM INSTANTANEOUS FORWARD
VOLTAGE (V)
T
J
=
−40°C
T
J
= 100°C T
J
= 25°C
0.20
0.30
0.40
T
J
=
−55°C
0.50
0.60
0.1
0.10
0.1
0.10
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
Figure 2. Maximum Forward Voltage
I
R
, REVERSE CURRENT (A)
10E−3
1E−3
T
J
= 125°C
T
J
= 100°C
I
R
, MAXIMUM REVERSE CURRENT (A)
100E−3
100E−3
T
J
= 125°C
10E−3
T
J
= 100°C
1E−3
T
J
= 25°C
T
J
=
−55°C
10E−6
1E−6
0
100E−6
10E−6
1E−6
T
J
= 25°C
T
J
=
−55°C
100E−6
100E−9
10E−9
1E−9
0
100E−12
10
20
30
V
R
, REVERSE VOLTAGE (V)
40
10
20
30
V
R
, REVERSE VOLTAGE (V)
40
Figure 3. Typical Reverse Current
9
8
I
O
, AVERAGE FORWARD
CURRENT (A)
7
6
5
4
3
2
1
0
25
50
75
100
125
150
SQUARE WAVE
I
pk
/I
O
=
p
I
pk
/I
O
= 5
dc
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
1
Figure 4. Maximum Reverse Current
P
FO
, AVERAGE POWER DISSIPATION (W)
freq = 20 kHz
SQUARE
WAVE
dc
I
pk
/I
O
=
p
I
pk
/I
O
= 5
I
pk
/I
O
= 10
I
pk
/I
O
= 20
2
3
4
5
6
7
8
9
I
O
, AVERAGE FORWARD CURRENT (A)
T
L
, LEAD TEMPERATURE (°C)
Figure 5. Current Derating
Figure 6. Forward Power Dissipation
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3
MBRS540P
TYPICAL CHARACTERISTICS
T
J
, DERATED OPERATING TEMPERATURE (°C)
1000
T
J
= 25
°C
125
115
105
95
85
75
65
55
0
5
R
qJA
= 136
°C/W
35
10
15
20
25
30
V
R
, DC REVERSE VOLTAGE (V)
40
45
R
qJA
= 81
°C/W
R
qJA
= 111
°C/W
R
qJA
= 12
°C/W
C, CAPACITANCE (pF)
R
qJA
= 47
°C/W
100
0
5
10
15
20
25
30
V
R
, REVERSE VOLTAGE (V)
35
40
Figure 7. Capacitance
Figure 8. Typical Operating Temperature
Derating
r(t), TRANSIENT THERMAL RESPONSE (C/W)
1000
100 D = 0.5
0.2
0.1
P
(pk)
Test Type > min pad 1 oz
R
qJC
= min pad 1 oz C/W
10
0.05
0.02
1 0.01
SINGLE PULSE
0.0001
0.001
0.01
0.1
t, TIME (s)
1
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
10
0.1
0.00001
100
1000
Figure 9. Thermal Response
−
MBRS540PT3G, NRVBS540T3G on min pad
r(t), TRANSIENT THERMAL RESPONSE (C/W)
100
D = 0.5
0.2
10
0.1
0.05
1
0.02
0.01
SINGLE PULSE
0.0001
0.001
0.01
0.1
t, TIME (s)
1
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
10
100
1000
P
(pk)
Test Type > min pad 1 oz
R
qJC
= min pad 1 oz C/W
0.1
0.00001
Figure 10. Thermal Response
−
MBRS540PT3G, NRVBS540T3G on 1” pad
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4
MBRS540P
PACKAGE DIMENSIONS
SMC 2−LEAD
CASE 403AC
ISSUE B
H
E
E
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH. MOLD
FLASH SHALL NOT EXCEED 0.254mm PER SIDE.
4. DIMENSIONS D AND E TO BE DETERMINED AT DATUM H.
5. DIMENSION b SHALL BE MEASURED WITHIN THE AREA
DETERMINED BY DIMENSION L.
D
A1
TOP VIEW
DETAIL A
c J
DETAIL A
A2
L
SIDE VIEW
b
END VIEW
A
DIM
A
A1
A2
b
c
D
E
H
E
L
MILLIMETERS
MIN
MAX
1.95
2.61
0.05
0.20
1.90
2.41
2.90
3.20
0.15
0.41
5.55
6.25
6.60
7.15
7.75
8.15
0.75
1.60
INCHES
MIN
MAX
0.077
0.103
0.002
0.008
0.075
0.095
0.114
0.126
0.006
0.016
0.219
0.246
0.260
0.281
0.305
0.321
0.030
0.063
RECOMMENDED
SOLDERING FOOTPRINT*
8.750
0.344
J
2X
3.790
0.149
2X
2.250
0.089
mm
SCALE 4:1
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
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