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SFW12955

Description
Advanced Power MOSFET
File Size247KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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SFW12955 Overview

Advanced Power MOSFET

Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
175 C Operating Temperature
Lower Leakage Current : 10
µA
(Max.) @ V
DS
= -60V
Low R
DS(ON)
: 0.22
(Typ.)
1
SFW/I2955
BV
DSS
= -60 V
R
DS(on)
= 0.3
I
D
= -9.4 A
D
2
-PAK
2
o
I
2
-PAK
1
3
2
3
1. Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
P
D
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25 C)
Continuous Drain Current (T
C
=100 C)
Drain Current-Pulsed
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (T
A
=25 C) *
Total Power Dissipation (T
C
=25 C)
Linear Derating Factor
T
J
, T
STG
T
L
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8” from case for 5-seconds
o
o
2
O
1
O
1
O
3
O
o
o
Value
-60
-9.4
-6.6
1
O
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W
W/ C
o
-38
+ 20
_
151
-9.4
4.9
-5.5
3.8
49
0.33
- 55 to +175
o
C
300
Thermal Resistance
Symbol
R
θ
JC
R
θ
JA
R
θ
JA
Characteristic
Junction-to-Case
Junction-to-Ambient *
Junction-to-Ambient
Typ.
--
--
--
Max.
3.06
40
62.5
o
Units
C/W
*
When mounted on the minimum pad size recommended (PCB Mount).
Rev. B
©1999 Fairchild Semiconductor Corporation

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