SFU9014 datasheet, PDF - EEWORLD Datasheet

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SFU9014: DescriptionAdvanced Power MOSFET; CategoryDiscrete semiconductor The transistor; File Size225KB，7 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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SFU9014 Overview

Advanced Power MOSFET

SFU9014 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Fairchild
Parts packaging code	TO-251
package instruction	IN-LINE, R-PSIP-T3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	120 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	5.3 A
Maximum drain current (ID)	5.3 A
Maximum drain-source on-resistance	0.5 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-251
JESD-30 code	R-PSIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	24 W
Maximum pulsed drain current (IDM)	21 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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Advanced Power MOSFET

FEATURES

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 10

µA

(Max.) @ V

= -60V

Lower R

DS(ON)

: 0.362

Ω

(Typ.)

SFR/U9014

DSS

= -60 V

DS(on)

= 0.5

Ω

= -5.3 A

D-PAK

I-PAK

1. Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

DSS

dv/dt

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (T

=25 C)

Continuous Drain Current (T

=100 C)

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T

=25 C) *

Total Power Dissipation (T

=25 C)

Linear Derating Factor

, T

STG

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8” from case for 5-seconds

Value

-60

-5.3

-3.7

Units

V/ns

W/ C

±30

120

-5.3

2.4

-5.5

2.5

0.19

- 55 to +150

300

Thermal Resistance

Symbol

θJC

θJA

Characteristic

Junction-to-Case

Junction-to-Ambient *

Junction-to-Ambient

Typ.

Max.

5.21

110

Units

C/W

When mounted on the minimum pad size recommended (PCB Mount).

Rev. C

SFU9014 Related Products

	SFU9014	SFR/U9014	SFRU9014
Description	Advanced Power MOSFET	Advanced Power MOSFET	Advanced Power MOSFET

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