2SK3818
Ordering number : ENN8056
2SK3818
Features
•
•
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Avalanche Enargy (Single Pulse) *1
Avalanche Current *2
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
EAS
IAV
PW≤10µs, duty cycle≤1%
Tc=25°C
Conditions
Ratings
60
±20
74
296
1.65
75
150
--55 to +150
410
74
Unit
V
V
A
A
W
W
°C
°C
mJ
A
Note :
*1
VDD=20V, L=100µH, IAV=74A
*2
L≤100µH, single pulse
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
ID=1mA, VGS=0
VDS=60V, VGS=0
VGS=
±16V,
VDS=0
VDS=10V, ID=1mA
VDS=10V, ID=37A
ID=37A, VGS=10V
ID=37A, VGS=4V
1.2
27
45
10
13
13
18
Conditions
Ratings
min
60
1
±10
2.6
typ
max
Unit
V
µ
A
µ
A
V
S
mΩ
mΩ
Marking : K3818
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
www.onsemi.com
Rev.0 I Page 1 of 4 I www.onsemi.com
Publication Order Number:
2SK3818/D
2SK3818
Continued from preceding page.
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
VDS=20V, f=1MHz
VDS=20V, f=1MHz
VDS=20V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
VDS=30V, VGS=10V, ID=74A
VDS=30V, VGS=10V, ID=74A
VDS=30V, VGS=10V, ID=74A
IS=74A, VGS=0
Ratings
min
typ
5250
780
525
38
315
370
310
100
18
16
1.13
1.5
max
Unit
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Package Dimensions
unit : mm
2093A
0.9
Package Dimensions
unit : mm
2090A
4.5
1.3
10.2
4.5
10.2
0.8
1.3
11.5
8.8
9.9
1.5max
8.8
1.6
20.9
1.2
3.0
11.0
9.4
0.8
0.4
2.55
1.2
2.55
1.35
1
0.8
2
3
0 to 0.3
0.4
1
2
3
2.7
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
2.55
2.55
2.55
2.55
Switching Time Test Circuit
VDD=30V
VIN
10V
0V
VIN
ID=37A
RL=0.81Ω
Unclamped Inductive Test Circuit
≥50Ω
RG
2.7
1.4
L
DUT
D
PW=10µs
D.C.
≤
1%
VOUT
15V
0V
50Ω
VDD
G
2SK3818
P.G
50Ω
S
Rev.0 I Page 2 of 4 I www.onsemi.com
2SK3818
90
80
ID -- VDS
Tc=25°C
90
ID -- VGS
25
°
Tc=
C
--25
°
C
75
°
C
1.0
1.5
2.0
2.5
3.0
VDS=10V
80
70
10
V
Drain Current, ID -- A
8V
70
60
50
40
30
20
10
0
0
0.2
0.4
Drain Current, ID -- A
4V
6V
60
50
40
30
20
10
0
VGS=3V
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
0.5
25
°
C
--25
°
C
3.5
4.0
Tc
=7
5
°
C
4.5
Drain-to-Source Voltage, VDS -- V
30
IT07834
30
Gate-to-Source Voltage, VGS -- V
IT07835
RDS(on) -- VGS
ID=37A
RDS(on) -- Tc
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
25
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
25
20
20
15
Tc=75
°
C
15
37
I D=
=4V
VGS
A,
10
25
°
C
--25
°
C
10
3
I D=
=10V
, VGS
7A
5
5
0
2
3
4
5
6
7
8
9
10
IT07836
0
--50
--25
0
25
50
75
100
125
150
Gate-to-Source Voltage, VGS -- V
100
Case Temperature, Tc --
°C
100
7
5
3
2
IT07837
y
fs -- ID
IF -- VSD
VGS=0
Forward Transfer Admittance,
y
fs -- S
7
5
VDS=10V
2
10
7
5
3
2
1.0
7
5
0.1
°
C
25
Forward Current, IF -- A
3
Tc
-25
=-
°
C
10
7
5
3
2
1.0
7
5
3
2
75
°
C
Tc=7
5
°
C
0.1
7
5
3
2
0.01
0.2
2
3
5 7 1.0
2
3
5 7 10
2
3
Drain Current, ID -- A
1000
7
5 7 100
IT07838
0.4
0.6
--25
°
C
0.8
25
°
C
1.0
1.2
1.4
IT07839
SW Time -- ID
td(off)
10000
Ciss, Coss, Crss -- VDS
f=1MHz
Ciss
Diode Forward Voltage, VSD -- V
VDD=30V
VGS=10V
7
5
Switching Time, SW Time -- ns
5
3
2
Ciss, Coss, Crss -- pF
tf
3
2
100
7
5
3
2
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
IT07840
tr
1000
Coss
Crss
td(on)
7
5
3
0
5
10
15
20
25
30
IT07841
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
Rev.0 I Page 3 of 4 I www.onsemi.com
2SK3818
10
9
VGS -- Qg
VDS=30V
ID=74A
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
7
5
3
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
IDP=296A
10
10
ID=74A
µ
s
8
7
6
5
4
3
2
1
0
0
10
20
30
40
50
60
70
80
90
100
0
µ
s
Operation in
this area is
limited by RDS(on).
1m
10
s
m
1
DC
00m
s
s
op
era
tio
n
0.1
0.1
Tc=25°C
Single pulse
2
3
5 7 1.0
2
3
5 7 10
2
3
Total Gate Charge, Qg -- nC
2.0
IT07842
90
PD -- Ta
Allowable Power Dissipation, PD -- W
Drain-to-Source Voltage, VDS -- V
5 7 100
IT07843
PD -- Tc
Allowable Power Dissipation, PD -- W
1.65
1.5
80
75
70
60
50
40
30
20
10
0
1.0
0.5
0
0
20
40
60
80
100
120
140
160
0
20
40
60
80
100
120
140
160
Amibient Tamperature, Ta --
°C
IT07811
Case Tamperature, Tc --
°C
IT07844
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