NL17SG86
Single 2-Input XOR Gate
The NL17SG86 MiniGatet is an advanced high−speed CMOS
2−State XOR gate in ultra−small footprint.
The NL17SG86 input structures provides protection when voltages
up to 4.6 V are applied.
Features
www.onsemi.com
MARKING
DIAGRAMS
SOT−953
P5 SUFFIX
CASE 527AE
UDFN6
1.0 x 1.0
CASE 517BX
UDFN6
1.45 x 1.0
CASE 517AQ
1
SC−88A
DF SUFFIX
CASE 419A
AV M
G
G
M
M
E
•
•
•
•
•
•
Wide Operating V
CC
Range: 0.9 V to 3.6 V
High Speed: t
PD
= 2.7 ns (Typ) at V
CC
= 3.0 V, C
L
= 15 pF
Low Power Dissipation: I
CC
= 0.5
mA
(Max) at T
A
= 25°C
4.6 V Overvoltage Tolerant (OVT) Input Pins (V
CC
≥
0.9 V)
Ultra−Small Packages
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
1
1
1
M
E
E
M
IN A
GND
IN B
1
2
3
SOT−953
5
V
CC
IN B
IN A
1
2
5
V
CC
1
4
OUT Y
GND
3
SC−88A
4
OUT Y
IN A
1
6
E
= Specific Device Code
(E with 90 degree clockwise rotation)
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or position may vary
depending upon manufacturing location.
V
CC
IN B
2
5
NC
PIN ASSIGNMENT
GND
3
UDFN6
4
OUT Y
1
2
3
4
5
IN A
IN B
6
=1
OUT Y
SOT−953
IN A
GND
IN B
OUT Y
V
CC
SC−88A
IN B
IN A
GND
OUT Y
V
CC
UDFN6
IN A
IN B
GND
OUT Y
NC
V
CC
Figure 1. Pinouts
(Top View)
FUNCTION TABLE
Figure 2. Logic Symbol
A Input
L
L
H
H
OE Input
L
H
L
H
Y Output
L
H
H
L
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
January, 2018 − Rev. 6
Publication Order Number:
NL17SG86/D
NL17SG86
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
I
GND
T
STG
T
L
T
J
MSL
F
R
V
ESD
I
LATCHUP
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Latchup Performance
Oxygen Index: 28 to 34
Human Body Model (Note 2)
Machine Model (Note 3)
Above V
CC
and Below GND at 125°C (Note 4)
Output at High or Low State
Power−Down Mode (V
CC
= 0 V)
V
IN
< GND
V
OUT
< GND
Parameter
Value
−0.5 to +5.5
−0.5 to +4.6
−0.5 to V
CC
+0.5
−0.5 to +4.6
−20
−20
±20
±20
±20
−65 to +150
260
+150
Level 1
UL 94 V−0 @ 0.125 in
>2000
>100
±100
V
mA
Unit
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2−ounce copper trace with no air flow.
2. Tested to EIA/JESD22−A114−A.
3. Tested to EIA/JESD22−A115−A.
4. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
Dt
/
DV
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating Temperature Range
Input Transition Rise or Fail Rate
V
CC
= 3.3 V
±
0.3 V
Output at High or Low State
Power−Down Mode (V
CC
= 0 V)
Characteristics
Min
0.9
0.0
0.0
0.0
−55
0
Max
3.6
3.6
V
CC
3.6
+125
10
Unit
V
V
V
°C
ns/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
www.onsemi.com
2
NL17SG86
DC ELECTRICAL CHARACTERISTICS
T
A
= 255C
Symbol
V
IH
Parameter
High−Level
Input Voltage
Conditions
V
CC
(V)
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
V
IL
Low−Level Input
Voltage
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
V
OH
High−Level
Output Voltage
V
IN
=
V
IH
or
V
IL
I
OH
= −20
mA
I
OH
= −0.3 mA
I
OH
= −1.7 mA
I
OH
= −3.0 mA
I
OH
= −4.0 mA
I
OH
= −8.0 mA
V
OL
Low−Level
Output Voltage
V
IN
=
V
IH
or
V
IL
I
OL
= 20
mA
I
OL
= 0.3 mA
I
OL
= 1.7 mA
I
OL
= 3.0 mA
I
OL
= 4.0 mA
I
OL
= 8.0 mA
I
IN
I
CC
Input Leakage
Current
Quiescent
Supply Current
0
≤
V
IN
≤
3.6 V
V
IN
= V
CC
or GND
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
0 to 3.6
3.6
0.75
0.75xV
CC
0.75xV
CC
V
CC
−0.45
2.0
2.48
0.1
0.25xV
CC
0.25xV
CC
0.45
0.4
0.4
$0.1
0.5
Min
V
CC
0.7xV
CC
0.65xV
CC
0.65xV
CC
1.7
2.0
GND
0.3xV
CC
0.35xV
CC
0.35xV
CC
0.7
0.8
0.75
0.75xV
CC
0.75xV
CC
V
CC
−0.4
5
2.0
2.48
0.1
0.25xV
CC
0.25xV
CC
0.45
0.4
0.4
$1.0
10.0
mA
mA
V
Max
T
A
= −555C to +1255C
Min
V
CC
0.7xV
CC
0.65xV
CC
0.65xV
CC
1.7
2.0
GND
0.3xV
CC
0.35xV
CC
0.35xV
CC
0.7
0.8
V
V
Max
Unit
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
NL17SG86
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Symbol
Parameter
Test Condition
V
CC
(V)
T
A
= 255C
Typ
23
T
A
= −555C to +1255C
Min
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
−
Unit
Min
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Max
−
t
PLH
,
t
PHL
Propagation Delay,
A or B to Y
C
L
= 10 pF,
R
L
= 1 MW
0.9
ns
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
L
= 15 pF,
R
L
= 1 MW
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
L
= 30 pF,
R
L
= 1 MW
0.9
1.1 to 1.3
1.4 to 1.6
1.65 to 1.95
2.3 to 2.7
3.0 to 3.6
C
IN
C
O
C
PD
Input Capacitance
Output Capacitance
Power Dissipation
Capacitance (Note 5)
V
O
= GND
f = 10 MHz
0 to 3.6
0
0.9 to 3.6
−
11.7
6.7
5.1
3.4
2.7
23.7
11.9
6.7
5.1
3.4
2.7
32.1
15.7
8.7
6.5
4.2
3.4
3
3
4
20.9
10.0
6.6
4.1
3.3
−
22.8
9.9
7.3
4.7
3.6
−
31.4
13.9
9.8
6.0
4.7
−
−
−
39.1
11.8
7.6
4.7
3.9
−
39.4
11.9
7.5
5.3
4.1
−
59.4
16.9
10.2
6.5
5.1
−
−
−
pF
pF
pF
ns
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption; P
D
= C
PD
V
CC2
f
in
+ I
CC
V
CC
.
www.onsemi.com
4
NL17SG86
V
CC
A or B
50%
t
PLH
Y
50%
GND
t
PHL
50% V
CC
Figure 3. Switching Waveform
V
CC
OUTPUT
INPUT
C
L
*
*Includes all probe and jig capacitance.
A 1 MHz square input wave is recommended for
propagation delay tests.
Figure 4. Test Circuit
ORDERING INFORMATION
Device
NL17SG86P5T5G
NL17SG86DFT2G
NL17SG86AMUTCG*
NL17SG86CMUTCG*
Package
SOT−953
(Pb−Free)
SC−88A
(Pb−Free)
UDFN6 1.45 x 1 mm
(Pb−Free)
UDFN6 1 x 1 mm
(Pb−Free)
Shipping
†
8000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*In Development.
www.onsemi.com
5
京公网安备 11010802033920号
EEWORLD
