SFH9244 datasheet, PDF - EEWORLD Datasheet

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SFH9244: DescriptionAdvanced Power MOSFET; CategoryDiscrete semiconductor The transistor; File Size204KB，7 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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SFH9244 Overview

Advanced Power MOSFET

SFH9244 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Parts packaging code	TO-3P
package instruction	TO-3P, 3 PIN
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	473 mJ
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	250 V
Maximum drain current (Abs) (ID)	8.7 A
Maximum drain current (ID)	8.7 A
Maximum drain-source on-resistance	0.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	P-CHANNEL
Maximum power dissipation(Abs)	126 W
Maximum pulsed drain current (IDM)	35 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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Advanced Power MOSFET

FEATURES

Avalanche Rugged Technology

Rugged Gate Oxide Technology

Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

Lower Leakage Current : 10

µA

(Max.) @ V

= -250V

Lower R

DS(ON)

: 0.549

Ω

(Typ.)

SFH9244

DSS

= -250 V

DS(on)

= 0.8

Ω

= -8.7 A

TO-3P

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol

DSS

dv/dt

, T

STG

Characteristic

Drain-to-Source Voltage

Continuous Drain Current (T

=25 C)

Continuous Drain Current (T

=100 C)

Drain Current-Pulsed

Gate-to-Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Total Power Dissipation (T

=25 C)

Linear Derating Factor

Operating Junction and

Storage Temperature Range

Maximum Lead Temp. for Soldering

Purposes, 1/8 “ from case for 5-seconds

Value

-250

-8.7

-6.0

Units

V/ns

W/ C

-35

+ 30

473

-8.7

12.6

-4.8

126

1.0

- 55 to +150

300

Thermal Resistance

Symbol

θJC

θCS

θJA

Characteristic

Junction-to-Case

Case-to-Sink

Junction-to-Ambient

Typ.

0.24

Max.

1.0

Units

C/W

Rev. A

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