NTMFD4C86N
PowerPhase, Dual
N-Channel SO8FL
30 V, High Side 20 A / Low Side 32 A
Features
•
•
•
•
Co−Packaged Power Stage Solution to Minimize Board Space
Minimized Parasitic Inductances
Optimized Devices to Reduce Power Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V
(BR)DSS
Q1 Top FET
30 V
Q2 Bottom
FET
30 V
R
DS(on)
MAX
5.4 mW @ 10 V
20 A
8.1 mW @ 4.5 V
2.6 mW @ 10 V
32 A
3.4 mW @ 4.5 V
D1
(3, 4, 9)
I
D
MAX
Applications
•
DC−DC Converters
•
System Voltage Rails
•
Point of Load
(1) G1
(2) S1
SW (5, 6, 7)
(8) G2
S2 (10)
Figure 1. Typical Application Circuit
100
95
EFFICIENCY (%)
90
PIN CONNECTIONS
D1 4
D1 3
S1 2
G1 1
(Bottom View)
9
D1
10
S2
5 SW
6 SW
7 SW
8 G2
85
80
75
70
V
IN
= 12 V
V
OUT
= 1.2 V
V
GS
= 5 V
F
SW
= 300 kHz
T
A
= 25°C
0
5
10
15
LOAD CURRENT (A)
20
25
MARKING
DIAGRAM
1
DFN8
CASE 506CR
1
4C86N
AYWZZ
Figure 2. Typical Efficiency Performance
POWERPHASEGEVB Evaluation Board
4C86N
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering and shipping information on page 10 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
September, 2016 − Rev. 3
Publication Order Number:
NTMFD4C86N/D
NTMFD4C86N
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Drain−to−Source Voltage
Gate−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current R
qJA
(Note 1)
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
Power Dissipation
RqJA (Note 1)
Continuous Drain Current R
qJA
≤
10 s (Note 1)
T
A
= 25°C
Q1
Q2
T
A
= 25°C
T
A
= 85°C
Steady
State
Power Dissipation
R
qJA
≤
10 s (Note 1)
Continuous Drain Current
R
qJA
(Note 2)
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
Q1
Q2
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 85°C
Power Dissipation
R
qJA
(Note 2)
Pulsed Drain Current
T
A
= 25
°C
Q1
Q2
T
A
= 25°C
t
p
= 10
ms
Q1
Q2
Q1
Q2
Source Current (Body Diode)
Q1
Q2
Drain to Source DV/DT
Single Pulse Drain−to−Source Avalanche Energy (T
J
= 25°C,
V
DD
= 50 V, V
GS
= 10 V, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
I
L
= 20 A
pk
I
L
= 40 A
pk
Q1
Q2
dV/dt
EAS
EAS
T
L
I
S
10
10
6
20
80
260
°C
V/ns
mJ
A
T
J
, T
STG
I
DM
160
280
−55 to +150
°C
A
P
D
Q2
Q1
I
D
11.3
8.1
18.1
13.0
1.10
W
A
P
D
Q2
Q1
I
D
20.2
14.5
32.3
23.3
3.51
W
A
P
D
Q2
Q1
Q2
Q1
Q2
Q1
I
D
14.8
10.7
23.7
17.1
1.89
W
A
V
GS
±20
V
Symbol
V
DSS
Value
30
Unit
V
Operating Junction and Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm
2
.
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2
NTMFD4C86N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Top) – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
Junction−to−Ambient – (t
≤
10 s) (Note 3)
Symbol
R
qJC
R
qJA
R
qJA
R
qJA
Value
3.3
66.0
113.7
35.6
°C/W
Unit
3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm
2
.
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Break-
down Voltage
Drain−to−Source Break-
down Voltage Temperature
Coefficient
Zero Gate Voltage Drain
Current
Q1
Q2
Q1
Q2
Q1
V
(BR)DSS
V
(BR)DSS
/ T
J
I
DSS
V
GS
= 0 V,
V
DS
= 24 V
V
GS
= 0 V,
V
DS
= 24 V
I
GSS
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
GS
= 0 V, I
D
= 250
mA
30
30
17
16.5
1
10
1
100
100
nA
mA
mV /
°C
V
FET
Symbol
Test Condition
Min
Typ
Max
Unit
Q2
Gate−to−Source Leakage
Current
Q1
Q2
V
GS
= 0 V, VDS = +20 V
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Q1
Q2
Negative Threshold Temper-
ature Coefficient
Drain−to−Source On Resist-
ance
Q1
Q2
Q1
V
GS(TH)
/
T
J
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
Q2
V
GS
= 10 V
V
GS
= 4.5 V
CAPACITANCES
Q1
Input Capacitance
Q2
Q1
Output Capacitance
Q2
Q1
Reverse Capacitance
Q2
C
RSS
C
OSS
V
GS
= 0 V, f = 1 MHz, V
DS
= 15 V
C
ISS
1153
3050
532
1650
107
77
pF
I
D
= 30 A
I
D
= 18 A
I
D
= 30 A
I
D
= 12.5 A
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
mA
1.3
1.3
4.5
4.6
4.3
6.5
1.7
2.4
5.4
8.1
2.6
3.4
mW
2.2
2.2
V
mV /
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
NTMFD4C86N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
CHARGES, CAPACITANCES & GATE RESISTANCE
Q1
Total Gate Charge
Q2
Q1
Threshold Gate Charge
Q2
Q1
Gate−to−Source Charge
Q2
Q1
Gate−to−Drain Charge
Q2
Q1
Total Gate Charge
Q2
Q1
Gate Resistance
Q2
Q
G(TOT)
R
G
V
GS
= 10 V, V
DS
= 15 V; I
D
= 30 A
Q
GD
Q
GS
Q
G(TH)
V
GS
= 4.5 V, V
DS
= 15 V; I
D
= 30 A
Q
G(TOT)
10.9
21.6
1.2
1.4
3.4
8.6
5.4
5.5
22.2
47.5
1.0
T
A
= 25°C
1.0
nC
nC
W
SWITCHING CHARACTERISTICS
(Note 6)
Q1
Turn−On Delay Time
Q2
Q1
Rise Time
Q2
Q1
Turn−Off Delay Time
Q2
Q1
Fall Time
Q2
t
f
t
d(OFF)
t
r
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
t
d(ON)
8.9
8.3
21.2
15.1
15.3
19.3
4.4
4.2
ns
SWITCHING CHARACTERISTICS
(Note 6)
Q1
Turn−On Delay Time
Q2
Q1
Rise Time
Q2
Q1
Turn−Off Delay Time
Q2
Q1
Fall Time
Q2
t
f
t
d(OFF)
t
r
V
GS
= 10 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
t
d(ON)
6.7
6.3
19.5
13.8
20.1
22.8
2.8
3.2
ns
DRAIN−SOURCE DIODE CHARACTERISTICS
Q1
Forward Voltage
Q2
V
SD
V
GS
= 0 V,
I
S
= 10 A
V
GS
= 0 V,
I
S
= 10 A
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
0.80
0.60
0.78
0.62
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
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4
NTMFD4C86N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
FET
Symbol
Test Condition
Min
Typ
Max
Unit
DRAIN−SOURCE DIODE CHARACTERISTICS
Q1
Reverse Recovery Time
Q2
Q1
Charge Time
Q2
Q1
Discharge Time
Q2
Q1
Reverse Recovery Charge
Q2
Q
RR
tb
ta
V
GS
= 0 V, d
IS
/d
t
= 100 A/ms, I
S
= 30 A
t
RR
29.1
33.7
14.5
17.4
14.6
16.3
21
27.5
nC
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
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5
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