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NYE08-10B6ST1G

Description
Silicon Bidirectional Thyristor
File Size102KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NYE08-10B6ST1G Overview

Silicon Bidirectional Thyristor

NYE08-10B6ST1G
Protected Triac
Silicon Bidirectional Thyristor
Designed for use in solid state relays, MPU interface, TTL logic and
other light industrial or consumer applications. Supplied in surface
mount package for use in automated manufacturing.
Features
http://onsemi.com
Sensitive Gate Trigger Current in Two Quadrants
Blocking Voltage to 600 V
Surface Mount Package
Compliant with IEC6100−4−5
These are Pb−Free Devices
PROTECTED TRIAC
0.8 AMPERE RMS
600 VOLTS
OUT
G
COM
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(Sine Wave, 50 to 60 Hz, Gate Open,
T
J
= 25 to
125°C)
On−State Current RMS (T
C
= 80°C)
(Full Sine Wave 50 to 60 Hz)
Peak Non−repetitive Surge Current (One
Full Cycle Sine Wave, 60 Hz, T
C
= 25°C)
Circuit Fusing Considerations
(Pulse Width = 8.3 ms)
Peak Gate Power
(T
C
= 80°C, Pulse Width
v
1.0
ms)
Average Gate Power
(T
C
= 80°C, t = 8.3 ms)
Non−Repetitive Line Peak Voltage
(IEC6100−4−5)
Critical Rate of Rise of All−State Current
(I
G
= 2 x I
GT
, t
r
< 100
ms,
T
J
= 1255C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
V
PP
di/dt
T
J
T
stg
Value
600
Unit
V
SOT−223
CASE 318E
1
8.0
0.4
5.0
0.1
2.0
100
−40
to +125
−40
to +150
A
A
2
s
W
W
kV
A/ms
°C
°C
1
2
3
4
A
Y
W
08106
G
=
=
=
=
=
MARKING
DIAGRAM
AYW
08106G
G
0.8
A
Assembly Location
Year
Work Week
Device Code
Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
OUT
COM
Gate
COM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.
ORDERING INFORMATION
Device
NYE08−10B6ST1G
Package
SOT−223
(Pb−Free)
Shipping
1000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
November, 2012
Rev. 0
1
Publication Order Number:
NYE08−10B6S/D
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