NTLUD4C26N
Power MOSFET
30 V, 7.3 A, Dual N−Channel,
2.0x2.0x0.55 mm
mCoolt
UDFN6 Package
Features
•
UDFN Package with Exposed Drain Pads for Excellent Thermal
Conduction
•
Low Profile UDFN 2.0 x 2.0 x 0.55 mm for Board Space Saving
•
Ultra Low R
DS(on)
•
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
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MOSFET
V
(BR)DSS
R
DS(on)
MAX
21 mW @ 10 V
24 mW @ 4.5 V
30 V
26 mW @ 3.7 V
28 mW @ 3.3 V
36 mW @ 2.5 V
65 mW @ 1.8 V
D1
D2
7.3 A
I
D
MAX
•
Power Load Switch
•
Wireless Charging
•
DC−DC Converters
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
t
≤
5s
Power Dissipa-
tion (Note 1)
Steady
State
t
≤
5s
Continuous Drain
Current (Note 2)
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
t
p
= 10
ms
P
D
I
DM
T
J
,
T
STG
I
S
T
L
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
30
±12
7.3
5.3
9.1
1.70
2.63
4.8
3.4
0.72
22
-55 to
150
3.0
260
W
A
°C
A
°C
A
W
Unit
V
V
A
G1
G2
S1
Dual N−Channel MOSFET
S2
MARKING
DIAGRAM
6
UDFN6
CASE 517BF
mCOOLt
1
AC MG
G
1
AC = Specific Device Code
M = Date Code
G
= Pb−Free Package
Power Dissipation (Note 2)
Pulsed Drain Current
MOSFET Operating Junction and Storage
Temperature
Source Current (Body Diode) (Note 1)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
(Note: Microdot may be in either location)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface-mounted on FR4 board using the minimum recommended pad size,
2 oz. Cu.
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information on page 3 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2016
1
May, 2016 − Rev. 2
Publication Order Number:
NTLUD4C26N/D
NTLUD4C26N
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient – Steady State (Note 3)
Junction-to-Ambient – t
≤
5 s (Note 3)
Junction-to-Ambient – Steady State min Pad (Note 4)
3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [2 oz] including traces).
4. Surface-mounted on FR4 board using the minimum recommended pad size, 2 oz. Cu.
Symbol
R
θJA
R
θJA
R
θJA
Max
73.6
47.6
174.4
°C/W
Unit
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage
Drain-to-Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
V
GS
= 0 V, I
D
= 250
mA
I
D
= 250
mA,
ref to 25°C
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
30
7
1
10
±100
nA
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Units
Gate-to-Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temp. Coefficient
Drain-to-Source On Resistance
I
GSS
V
DS
= 0 V, V
GS
=
±12
V
V
GS
= V
DS
, I
D
= 250
mA
V
GS
= 10 V, I
D
= 6.0 A
V
GS
= 4.5 V, I
D
= 5.0 A
V
GS
= 3.7 V, I
D
= 3.0 A
V
GS
= 3.3 V, I
D
= 3.0 A
V
GS
= 2.5 V, I
D
= 2.0 A
V
GS
= 1.8 V, I
D
= 1.0 A
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
0.6
2.8
17.5
20
21
22
25
40
23
1.1
V
mV/°C
21
24
26
28
36
65
mW
Forward Transconductance
g
FS
V
DS
= 1.5 V, I
D
= 5.0 A
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
V
GS
= 4.5 V, V
DS
= 15 V;
I
D
= 5.0 A
V
GS
= 4.5 V, V
DS
= 10 V;
I
D
= 5.0 A
V
GS
= 0 V, f = 1 MHz,
V
DS
= 15 V
460
225
27
5.0
5.5
0.55
2.5
1.1
8.0
9.0
nC
nC
pF
SWITCHING CHARACTERISTICS, V
GS
= 4.5 V
(Note 6)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DD
= 15 V,
I
D
= 5.0 A, R
G
= 1
W
5
15
13
1.7
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
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NTLUD4C26N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
V
GS
= 0 V,
I
S
= 2.0 A
T
J
= 25°C
T
J
= 125°C
0.7
0.6
18.5
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 2.0 A
9.3
9.1
7.8
nC
ns
1.0
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
t
RR
t
a
t
b
Q
RR
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: pulse width
≤
300
ms,
duty cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperatures.
DEVICE ORDERING INFORMATION
Device
NTLUD4C26NTAG
NTLUD4C26NTBG
Package
UDFN6
(Pb−Free)
UDFN6
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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3
NTLUD4C26N
TYPICAL CHARACTERISTICS
25
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
20
10 V to
2.0 V
1.6 V
10
V
GS
= 1.8 V
20
T
J
= 125°C
T
J
= 25°C
10
25
V
DS
= 5 V
15
15
5
1.2 V
0
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5
T
J
= −55°C
0
0
0.4
0.8
1.2
1.6
2
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
30
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (mW)
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (mW)
28
26
24
22
20
18
16
2
3
4
5
6
7
8
9
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
T
J
= 25°C
I
D
= 6 A
50
Figure 2. Transfer Characteristics
T
J
= 25°C
45
40
35
30
V
GS
= 3.7 V
25
20
15
1
3
5
7
9
11
13
I
D
, DRAIN CURRENT (A)
V
GS
= 2.5 V
V
GS
= 3.3 V
V
GS
= 4.5 V
V
GS
= 10 V
17
19
15
V
GS
= 1.8 V
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.5
R
DS(on)
, DRAIN−TO−SOURCE
RESISTANCE (Normalized)
V
GS
= 10 V
I
D
= 6 A
1.3
100000
10000
I
DSS
, LEAKAGE (nA)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
T
J
= 150°C
1000
100
10
1
T
J
= 85°C
V
GS
= 0 V
0
10
20
30
T
J
= 125°C
1.1
0.9
0.7
−50
−25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (°C)
0
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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NTLUD4C26N
TYPICAL CHARACTERISTICS
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Q
T
8
25
20
6
15
4
Q
gs
Q
gd
T
J
= 25°C
V
DS
= 15 V
I
D
= 5 A
0
2
4
6
8
10
5
0
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE
(V)
0.8
1000
C
iss
C, CAPACITANCE (pF)
C
oss
100
10
30
C
rss
T
J
= 25°C
V
GS
= 0 V
f = 1 MHz
0
5
10
15
20
25
2
10
0
30
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
100.0
I
S
, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 4.5 V
t, TIME (ns)
t
d(off)
t
f
t
r
10.0
2.0
Figure 8. Gate−to−Source vs. Total Charge
V
GS
= 0 V
T
J
= −55°C
T
J
= 25°C
1.0
T
J
= 125°C
t
d(on)
1.0
1
10
R
G
, GATE RESISTANCE (W)
100
0.0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
1.80
1.60
I
D
, DRAIN CURRENT (A)
10
10
ms
100
ms
V
GS
< 10 V
T
A
= 25°C
Single Pulse Response
R
DS(on)
Limit
Thermal Limit
Package Limit
0.01
0.1
1
10
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
100
1 ms
10 ms
dc
0.20
0.00
−50
V
GS(th)
, (V)
1.40
1.20
1.00
0.80
0.60
0.40
Figure 10. Diode Forward Voltage vs. Current
I
D
= 250
mA
1
0.1
−25
0
25
50
75
100
T
J
, TEMPERATURE (°C)
125
150
175
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Threshold Voltage
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