Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional
tolerance to base drive and collector current load variations resulting in a very low worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
3.0
300
MAX.
1500
800
5
8
45
3.0
-
450
UNIT
V
V
A
A
W
V
A
ns
T
hs
≤
25 ˚C
I
C
= 3 A; I
B
= 0.75 A
f = 16 kHz
I
Csat
= 3.0 A;f = 16 kHz
PINNING - SOT399
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
1 2 3
case isolated
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
5
8
3
5
4
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
≤
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
32
MAX.
2.8
-
UNIT
K/W
K/W
1
Turn-off current.
July 1999
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
V
isol
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
PARAMETER
Collector cut-off current
2
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
I
B
= 1 mA
I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 3.0 A; I
B
= 0.75 A
I
C
= 3.0 A; I
B
= 0.75 A
I
C
= 0.5 A; V
CE
= 5 V
I
C
= 3 A; V
CE
= 5 V
MIN.
-
-
7.5
800
-
0.8
-
4.2
TYP.
-
-
13.5
-
-
0.89
10
5.5
MAX.
1.0
2.0
-
-
3.0
0.98
-
7.3
UNIT
mA
mA
V
V
V
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (16kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
CONDITIONS
I
Csat
= 3.0 A; I
B1
= 0.6 A; (I
B2
= -1.5 A)
3.7
300
4.6
450
µs
ns
TYP.
MAX.
UNIT
t
s
t
f
IC / mA
+ 50v
100-200R
250
Horizontal
Oscilloscope
Vertical
100R
6V
30-60 Hz
1R
200
100
0
VCE / V
min
VCEOsust
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
2
Measured with half sine-wave voltage (curve tracer).
July 1999
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AX
TRANSISTOR
IC
DIODE
ICsat
100
hFE
Ths = 25 C
Ths = 85 C
t
VCE = 1 V
IB
IB1
t
20us
26us
64us
IB2
10
VCE
1
0.01
t
0.1
1
IC / A 10
Fig.3. Switching times waveforms (16 kHz).
Fig.6. High and low DC current gain.
ICsat
90 %
IC
100
hFE
Ths = 25 C
Ths = 85 C
VCE = 5 V
10 %
tf
ts
IB
IB1
t
10
t
1
0.01
- IB2
0.1
1
IC / A
10
Fig.4. Switching times definitions.
Fig.7. High and low DC current gain.
+ 150 v nominal
adjust for ICsat
1
VCESAT / V
Ths = 25 C
Ths = 85 C
0.8
Lc
0.6
0.4
IBend
LB
T.U.T.
Cfb
0.2
-VBB
0
0.1
1
IC / A
10
Fig.5. Switching times test circuit.
Fig.8. Typical collector-emitter saturation voltage.
July 1999
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AX
VBESAT / V
1.2
Ths = 25 C
Ths = 85 C
120
110
100
90
80
70
60
50
IC = 3 A
PD%
Normalised Power Derating
with heatsink compound
1.1
1
0.9
40
30
20
10
0
0
20
40
60
80
Ths / C
100
120
140
0.8
0.7
0.6
0
1
2
3
IB / A
4
Fig.9. Typical base-emitter saturation voltage.
Fig.11. Normalised power dissipation.
PD% = 100
⋅
P
D
/P
D 25˚C
10
ts/tf/ us
ICsat = 3 A
Ths = 85 C
Freq = 16 kHz
Zth
`
(K/W)
BU4506DF/DX
10
D = 0.5
8
1
6
0.2
0.1
0.05
0.1
4
0.02
D=0
P
D
tp
D = tp/T
0.01
2
T
0
t
0
0.5
1
1.5
IB / A
2
0.001
1E-06
1E-05
1E-04
1E-03 1E-02
t/s
1E-01 1E+00 1E+01
Fig.10. Typical collector storage and fall time.
I
C
=3 A; T
j
= 85˚C; f = 16kHz
Fig.12. Transient thermal impedance.
July 1999
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4506AX
MECHANICAL DATA
Dimensions in mm
Net Mass: 5.88 g
16.0 max
0.7
4.5
10.0
27
max
25.1
25.7
22.5
max
5.1
2.2 max
18.1
min
4.5
1.1
0.4 M
2
5.45
5.45
3.3
5.8 max
3.0
25
0.9 max
3.3
Fig.13. SOT399; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1999
5
Rev 1.000
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