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BU4525AF

Description
Silicon Diffused Power Transistor
CategoryDiscrete semiconductor    The transistor   
File Size40KB,6 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric View All

BU4525AF Overview

Silicon Diffused Power Transistor

BU4525AF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)12 A
ConfigurationSingle
Minimum DC current gain (hFE)4.2
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)45 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525AF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
9.0
7.0
0.4
0.15
MAX.
1500
800
12
30
45
3.0
-
-
0.55
-
UNIT
V
V
A
A
W
V
A
A
µs
µs
T
hs
25 ˚C
I
C
= 9.0 A; I
B
= 2.25 A
f = 16 kHz
f = 70 kHz
I
Csat
= 9.0 A;f = 16 kHz
I
Csat
= 7.0 A;f = 70 kHz
PINNING - SOT199
PIN
1
2
3
base
collector
emitter
DESCRIPTION
PIN CONFIGURATION
case
SYMBOL
c
b
case isolated
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
12
30
8
12
7
45
150
150
UNIT
V
V
A
A
A
A
A
W
˚C
˚C
T
hs
25 ˚C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1
Turn-off current.
October 1998
1
Rev 1.100
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