10-FY12NMA160SH-M420F
10-PY12NMA160SH-M420FY
preliminary datasheet
flowMNPC 1
Features
●
mixed voltage NPC topology
●
reactive power capability
●
low inductance layout
●
Split output
●
Common collector neutral connection
1200V/160A
flow1 12mm housing
12mm solder pin
12mm PressFiT pin
Schematic
Target Applications
●
solar inverter
●
UPS
●
Active frontend
Types
●
10-FY12NMA160SH-M420F
●
10-PY12NMA160SH-M420FY
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Halfbridge IGBT Inverse Diode
Repetitive peak reverse voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=T
j
max
tp=10ms
T
h
=80°
C
C
T
c
=80°
T
h
=80°
C
T
c
=80°
C
1200
14
19
14
31
47
150
V
A
A
W
°
C
Halfbridge IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
1200
116
156
640
260
394
±20
10
600
175
V
A
A
W
V
µs
V
°
C
copyright Vincotech
1
Revision: 2
10-FY12NMA160SH-M420F
10-PY12NMA160SH-M420FY
preliminary datasheet
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
NP Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°
C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
C
T
c
=80°
T
h
=80°
C
T
c
=80°
C
600
66
90
240
67
101
150
V
A
A
W
°
C
NP IGBT
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
600
63
83
300
94
142
±20
6
360
175
V
A
A
W
V
µs
V
°
C
NP Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
c
=25°
C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
600
13
18
30
20
31
150
V
A
A
W
°
C
Halfbridge Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°
C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
1200
36
50
120
61
92
150
V
A
A
W
°
C
DC link Capacitor
Max.DC voltage
V
MAX
Tc=25°
C
630
V
copyright Vincotech
2
Revision: 2
10-FY12NMA160SH-M420F
10-PY12NMA160SH-M420FY
preliminary datasheet
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
mm
mm
copyright Vincotech
3
Revision: 2
10-FY12NMA160SH-M420F
10-PY12NMA160SH-M420FY
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Halfbridge IGBT Inverse Diode
Forward voltage
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
f
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
7
Tj=25°C
Tj=125°C
1
1,97
1,65
3,4
V
K/W
2,24
1,48
Halfbridge IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
*additional value stands for built-in capacitor
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(ON)
t
r
t
d(OFF)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
R
thJC
V
CE
=V
GE
15
0
20
1200
0
0,004
160
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1
5,8
2,02
2,37
6,5
2,5
1
2400
V
V
mA
nA
none
133
135
20
23
225
276
38
64
1,80
3,18
2,52
4,03
ns
Rgoff=4
Rgon=4
±15
350
100
mWs
9320
f=1MHz
0
25
Tj=25°C
600
520
15
Thermal grease
thickness≤50um
λ
= 1 W/mK
960
160
Tj=25°C
740
0,37
K/W
0,24
nC
pF
NP Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
120
Rgon=4
±15
350
100
Erec
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,4
1,47
1,29
127
151
40
81
3,02
7,13
12386
3767
0,31
1,01
2
V
A
ns
µC
A/µs
mWs
K/W
1,05
0,69
copyright Vincotech
4
Revision: 2
10-FY12NMA160SH-M420F
10-PY12NMA160SH-M420FY
preliminary datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
NP IGBT
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°C
f=1MHz
15
480
100
Tj=25°C
Rgoff=4
Rgon=4
±15
350
100
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
V
CE
=V
GE
15
0
20
600
0
0,0016
100
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
5
1,05
5,8
1,58
1,8
6,5
1,85
0,0052
1200
V
V
mA
nA
none
103
103
16,8
19,2
158
179
44
64
1,06
1,52
2,48
3,32
ns
µWs
6280
400
186
620
1,01
K/W
0,67
nC
pF
NP Inverse Diode
Diode forward voltage
Thermal resistance chip to heatsink per chip
Coupled thermal resistance inverter transistor-diode
V
F
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
15
Tj=25°C
Tj=125°C
1,00
1,61
1,57
2,15
V
3,43
K/W
2,27
Halfbridge Diode
Diode forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
60
1200
Rgon=4
±15
350
100
E
rec
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1,50
2,47
2,11
107
142
51
69
6,24
12,71
5985
2890
1,71
3,61
3,40
200
V
µA
A
ns
µC
A/µs
mWs
K/W
1,15
0,76
DC link Capacitor
C value
C
DC+ to Neutral and DC- to Neutral
100
nF
Thermistor
Rated resistance
Deviation of R25
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
Tol. ±3%
R
∆R/R
P
R100=1486
T=25°C
T=25°C
T=25°C
Tj=25°C
Tj=25°C
Tj=25°C
-5
200
2
3950
3996
B
22000
+5
%
mW
mW/K
K
K
Module Properties
Thermal resistance, case to heatsink
Module stray inductance
Chip module lead resistance, terminals -chip
Mounting torque
Weight
R
thCH
L
sCE
Rcc
'1+EE'
M
G
per module
λPaste=1W/(m·K)/λgrease=1W/(m·K)
tbd.
5
tbd.
2
42,28
2,2
K/W
nH
m
Nm
g
V23990-P-M107-*-31
Tc=25°C, per switch
Screw M4 - mounting according to valid application note
Flow1-4TY-P-*-HI for PressFiT, V23990-P-M101-*-31 for SolderPin
copyright Vincotech
5
Revision: 2
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