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AP18P10GH-HF_16

Description
Fast Switching Characteristic
File Size70KB,5 Pages
ManufacturerAPEC
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AP18P10GH-HF_16 Overview

Fast Switching Characteristic

AP18P10GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
RoHS Compliant & Halogen-Free
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
-100V
180mΩ
-12A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters. The through-hole version (AP18P10GJ) is
available for low-profile applications.
G
D
S
G
D
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current, V
GS
@ 10V
Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
.
Rating
-100
+20
-12
-10
-48
35.7
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
Thermal Data
Symbol
Rthj-c
Rthj-a
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
3.5
62.5
110
Units
℃/W
℃/W
℃/W
1
201501134
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice

AP18P10GH-HF_16 Related Products

AP18P10GH-HF_16 AP18P10GH-HF AP18P10GJ-HF
Description Fast Switching Characteristic Fast Switching Characteristic Fast Switching Characteristic
Is it Rohs certified? - conform to conform to
Maker - APEC APEC
package instruction - SMALL OUTLINE, R-PSSO-G2 IN-LINE, R-PSIP-T3
Reach Compliance Code - compli compli
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 100 V 100 V
Maximum drain current (ID) - 12 A 12 A
Maximum drain-source on-resistance - 0.18 Ω 0.18 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code - TO-252 TO-251
JESD-30 code - R-PSSO-G2 R-PSIP-T3
Number of components - 1 1
Number of terminals - 2 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - SMALL OUTLINE IN-LINE
Peak Reflow Temperature (Celsius) - NOT SPECIFIED NOT SPECIFIED
Polarity/channel type - P-CHANNEL P-CHANNEL
Maximum pulsed drain current (IDM) - 48 A 48 A
surface mount - YES NO
Terminal form - GULL WING THROUGH-HOLE
Terminal location - SINGLE SINGLE
Maximum time at peak reflow temperature - NOT SPECIFIED NOT SPECIFIED
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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