an
AMP
company
RF MOSFET Power
100 - 500 MHz
Features
N-Channel Enhancement
DMOS Structure
Lower Capacitances
for Broadband
Mode Device
Transistor,
lOOW, 28V
UF281 OOM
Operation
Devices
High Saturated Output Power
Lower Noise Figure Than Competitive
Absolute Maximum Ratings at 25°C
pi
Power Dissipation
JunctionTemperature
Storage Temperature
Thermal Resistance
250
200
-55 to +150
0.7
W
“C
“C
“Ciw
PD
T,
T STG
El
JO
I4
II
P
&w
505
m
t.74
a&b,
a¶
.m4
am
ooc
1
1
1
ale
a?4
ace
Electrical Characteristics
I Parameter
at 25°C
(
Symbol
1 Min
1 Max
1 Units 1
Test Conditions
1
Drain-Source
Breakdown Voltage
BVDSS
‘OS5
‘GSS
V
GSCTHI
GM
C ISS
C OS.5
C RSS
%
65
-
3.0
3.0
V
mA
pA
V
S
pF
pF
pF
dB
%
dB
-
Drain-Source LeakageCurrent
Gate-Source
Leakage Current
I
V,,=O.O V, I,,=150
v,,=2a.o
v,,=20
V,,=lO.O
V,,=lO.O
v,=2a.o
V,s=28.0
mA’
v. vo,=o.o v
v, v,,=o.o
V’
mA‘
mA,
~v,,=l
V, 80 ps Pulse’
.O
Gate Threshold Voltage
ForwardTransconductance
input Capacitance
Output Capacitance
Reverse Capacitance
Power Gain
Drain Efficiency
Return Loss
Load Mismatch Tolerance
* Per Side
Specifications
2.0
1.5
6.0
-
135
90
24
V, 1,,=300.0
V, 1,,=3000.0
v, F=l .o MHz’
V, F=l .O MHz’
v,,=2a.ov, .OMHZ*
F=I
V,,=28.0
--
v,,=%.O
V,,=28.0
v,,=28.0
V, 1,,=600.0
V, 1,,=600.0
V, 1,,=600.0
V. 1,,=600.0
mA, P,,=lOO.O
mA, P,,=lOO.O
W. F=500 MHz
W, F=500 MHz
I
10
50
10
-
-
-
3O:l
mA, PO,,=1 00.0 W, F=500 MHz
mA, P,,,.=100.0
W, F=500 MHz
VSWR-T
-
Subject to Change Without Notice.
M/A-COM,
North America:
Tel.
(800)
366-2266
inc.
m
Asia/Pacific:
Fax (800) 678-8883
Tel.
Fax
+81 (03) 3226-1671
+81 (03) 3226-1451
n
Europe:
Tel.
Fax
+44
+44
(1344)
(1344)
869 595
300 020
RF MOSFET Power Transistor,
IOOW,
28V
UF281OOM
v2.0
Typical Broadband
Performance
Curves
EFFICIENCY
P,=lO
W I,,=600
vs FREQUENCY
mA
(Push-Pull
POWER OUTPUT vs SUPPLY VOLTAGE
P,,,=lO W I,,=600 mA F=500 MHz
loo
80.
Device)
80
60
20
t
100
200
300
400
so0
14
16
20
24
28
32
FREQUENCY
(MHz)
SUPPLY VOLTAGE (V)
POWER OUTPUT vs POWER
INPUT
V,,=28 V I,,=600 mA (Push-Pull Device)
s
e
i3
5
fs
0
80
60
40
20
0
0
1
2
4
6
8
10
12
POWER INPUT(W)
Specifications
Subject to Change Without Notice.
M/A-COM,
Inc.
Tel. (800) 366-2266
Fax (800) 618-8883
=
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
m
Europe:
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
North America:
RF MOSFET Power Transistor, IOOW, 28v
UF28100M
v2.00
Typical Device Impedance
Frequency
100
(
300
500
(MHz)
Z,, (OHMS)
4.5 - j 6.0
1
2.25
- j 1.75
1.5 + j 5.5
V,,=28
V, I,=600
mA, P,,,=lOO.O
Watts
1
Z,,,D (OHMS)
14.5+jO.5
7.5+j
1.0
I
I
3.5 - j 3.5
Z,, is the series equivalent
input impedance
of the device from gate to gate.
as measured from drain to drain.
Z LcAD the pptimum series equivalent
is
load impedance
RF Test Fixture
PARTS
Cl .c8
c2m
c4
c.5
c&c7
CS.ClO
Cl1
Cl2
Rl.lU
RR3
Ll
I2
11
LIST
CHIP CAPACITOR. 2.OpF ATC B
CHIP CAPACITOR. EOXPF
CHIP CAPACTTOR.S7pF ATC B
CHIP CAPACITOR. 2WpF ATC B
CHIP CAPACXTOR..OlSuF
CHIP CAPACTOR. 5BOpFATC B
CHIP CAPACITOR. O.BpFATC 8
ELECTROLYI-IC CAPACTTOR.SOuF54 VOLTS
RESISTOR. 27 OHM 25 WAH
RBSI.TOR. 22K OHM 25 WATT
INDUCTOR. S TURNS OF NO. 18 AWG ON ‘.lO
INDUCTOR. 1ONRNS
OF NO. 27 AWG ON R4
,:l BALUN TRANSFORMER 50 OIIM SEMI-RIGID WAX
‘.cesX3-LONG
72
61 BALUN TRANSFORMER. 25 OHM SEMI-RIGID COAX
‘370’ X 2.3 LONG
l3
1:s BALUN TR*NsFoRMER
‘370 X 25’ LONG
10 OHM SEMI-RIGIG COAX
74
1:l BALUN TRAMFORMER.
‘.oBs x 4. LONG
50 OHM SEMI-RIGID COAX
01
BOARD
JlJ2
J3.JdJ5
HEATSMK
uF2s1ooM
ROGERS 5870. .m?’ THICK
CONNECIOR. TYPE ‘N
BANANAJACK
FINNED ALUMINUM. DiN 73XD1B2-03
Specifications Subject
tD
Change
!ffiiDut
Notice.
M/A-COM,
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
B Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
m
Europe:
Inc.
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
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