RGTH00TS65D
650V 50A Field Stop Trench IGBT
lOutline
Data
Sheet
V
CES
I
C(100°C)
V
CE(sat) (Typ.)
P
D
lFeatures
650V
50A
1.6V
277W
TO-247N
(1)(2)(3)
lInner
Circuit
(2)
*1
(1)
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Built in Very Fast & Soft Recovery FRD
(RFN - Series)
5) Pb - free Lead Plating ; RoHS Compliant
lApplications
PFC
UPS
Type
Power Conditioner
IH
(1) Gate
(2) Collector
(3) Emitter
*1 Built in FRD
(3)
lPackaging
Specifications
Packaging
Reel Size (mm)
Tape Width (mm)
Basic Ordering Unit (pcs)
Taping Code
Marking
Tube
-
-
450
C11
RGTH00TS65D
lAbsolute
Maximum Ratings
(at T
C
= 25°C unless otherwise specified)
Parameter
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulsed Forward Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
*1 Pulse width limited by T
jmax.
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© 2014 ROHM Co., Ltd. All rights reserved.
Symbol
V
CES
V
GES
T
C
= 25°C
T
C
= 100°C
I
C
I
C
I
CP*1
T
C
= 25°C
T
C
= 100°C
I
F
I
F
I
FP*1
T
C
= 25°C
T
C
= 100°C
P
D
P
D
T
j
T
stg
Value
650
30
85
50
200
50
30
200
277
138
-40
to +175
-55
to +175
Unit
V
V
A
A
A
A
A
A
W
W
°C
°C
1/11
2014.05 - Rev.B
RGTH00TS65D
lThermal
Resistance
Values
Parameter
Thermal Resistance IGBT Junction - Case
Thermal Resistance Diode Junction - Case
Symbol
Min.
R
θ(j-c)
R
θ(j-c)
-
-
Typ.
-
-
Data Sheet
Unit
Max.
0.54
1.42
°C/W
°C/W
lIGBT
Electrical Characteristics
(at T
j
= 25°C unless otherwise specified)
Values
Parameter
Symbol
Conditions
Min.
Collector - Emitter Breakdown
Voltage
BV
CES
I
C
= 10μA, V
GE
= 0V
650
Typ.
-
Max.
-
V
Unit
Collector Cut - off Current
I
CES
V
CE
= 650V, V
GE
= 0V
-
-
10
μA
Gate - Emitter Leakage Current
I
GES
V
GE
=
30V,
V
CE
= 0V
-
-
200
nA
Gate - Emitter Threshold
Voltage
V
GE(th)
V
CE
= 5V, I
C
= 34.7mA
I
C
= 50A, V
GE
= 15V
4.5
5.5
6.5
V
Collector - Emitter Saturation
Voltage
V
CE(sat)
T
j
= 25°C
T
j
= 175°C
-
-
1.6
2.1
2.1
-
V
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© 2014 ROHM Co., Ltd. All rights reserved.
2/11
2014.05 - Rev.B
RGTH00TS65D
lIGBT
Electrical Characteristics
(at T
j
= 25°C unless otherwise specified)
Values
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate - Emitter Charge
Gate - Collector Charge
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Turn - on Delay Time
Rise Time
Turn - off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Conditions
Min.
V
CE
= 30V
V
GE
= 0V
f = 1MHz
V
CE
= 300V
I
C
= 50A
V
GE
= 15V
I
C
= 50A, V
CC
= 400V
V
GE
= 15V, R
G
= 10Ω
T
j
= 25°C
Inductive Load
I
C
= 50A, V
CC
= 400V
V
GE
= 15V, R
G
= 10Ω
T
j
= 175°C
Inductive Load
I
C
= 200A, V
CC
= 520V
Reverse Bias Safe Operating Area
Data Sheet
Unit
Typ.
2740
106
43
94
22
31
39
63
143
50
39
63
159
62
Max.
-
-
-
-
-
-
-
-
ns
-
-
-
-
-
-
-
-
-
-
ns
-
-
nC
pF
-
-
-
-
-
-
-
-
RBSOA V
P
= 650V, V
GE
= 15V
R
G
= 60Ω, T
j
= 175°C
FULL SQUARE
-
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© 2014 ROHM Co., Ltd. All rights reserved.
3/11
2014.05 - Rev.B
RGTH00TS65D
lIGBT
Electrical Characteristics
(at T
j
= 25°C unless otherwise specified)
Values
Parameter
Symbol
Conditions
Min.
I
F
= 30A
Diode Forward Voltage
V
F
T
j
= 25°C
T
j
= 175°C
Diode Reverse Recovery Time
t
rr
-
-
-
I
F
= 30A
V
CC
= 400V
di
F
/dt = 200A/μs
T
j
= 25°C
-
0.22
-
-
7.4
-
1.45
1.25
54
Typ.
Data Sheet
Unit
Max.
2.0
-
-
V
ns
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery
Charge
I
rr
A
Q
rr
μC
Diode Reverse Recovery Time
t
rr
-
I
F
= 30A
V
CC
= 400V
di
F
/dt = 200A/μs
T
j
= 175°C
-
-
225
-
ns
Diode Peak Reverse Recovery
Current
Diode Reverse Recovery
Charge
I
rr
12.8
-
A
Q
rr
1.60
-
μC
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© 2014 ROHM Co., Ltd. All rights reserved.
4/11
2014.05 - Rev.B
RGTH00TS65D
lElectrical
Characteristic Curves
Data Sheet
Fig.1 Power Dissipation vs. Case Temperature
300
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
Fig.2 Collector Current vs. Case Temperature
90
80
Power Dissipation : P
D
[W]
Collector Current : I
C
[A]
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
175
T
j
≦175ºC
V
GE
≧15V
Case Temperature : Tc [ºC]
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
1000
10
µs
Fig.4 Reverse Bias Safe Operating Area
240
220
200
Collector Current : I
C
[A]
Collector Current : I
C
[A]
100
180
160
140
120
100
80
60
40
20
0
T
j
≦175ºC
V
GE
=15V
0
200
400
600
800
10
100
µs
1
0.1
T
C
= 25ºC
Single Pulse
0.01
1
10
100
1000
Collector To Emitter Voltage : V
CE
[V]
Collector To Emitter Voltage : V
CE
[V]
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© 2014 ROHM Co., Ltd. All rights reserved.
5/11
2014.05 - Rev.B
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