UF28150J PRELIMINARY
POWER MOSFET TRANSISTOR
150 WATTS, 100 - 500 MHz, 28 V
FEATURES
OUTLINE DRAWING
• N-Channel Enhancement Mode Device
• Applications
• 150 Watts CW
• Common Source Gemini Configuration
• RESFET Structure
• Internal Input Impedance Matching
• Gold Metallization
ABSOLUTE MAXIMUM RATINGS AT 25°C
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage
Drain-Source Current
Dissipation @25°C
Storage Temperature
Junction Temperature
Thermal Resistance
VDS
VGS
IDS
PD
Tstg
Tj
60
20
28
233
-55 to +150
200
0.75
Units
V
V
A
W
°C
°C
°C/W
θ
jc
ELECTRICAL CHARACTERISTICS AT 25°C (*per side)
Parameter
Symbol
Min
Max
Drain-Source Breakdown
Voltage
Drain-Source Leakage
Current
Gate-Source Leakage
Current
Gate Threshold Voltage
Forward Transconductance
Input Capacitance
Reverse Capacitance
Output Capacitance
Power Gain
Collector Efficiency
Load Mismatch Tolerance
BVDSS
IDSS
IGSS
VGS(th)
Gm
CISS
CRSS
COSS
GP
10
50
-
60
-
-
2.0
1.0
-
4.0
2.0
6.0
-
200
50
14
-
-
3.0:1
Units
V
mA
µA
V
S
pF
pF
pF
dB
%
-
Test Conditions
ID=40 mA, VGS=0.0 V*
VDS=28.0 V, VGS=0.0 V*
VGS=20 V, VDS=0.0 V*
VDS=10.0 V, IDS=200 mA*
VDS=10.0 V, IDS=2000 mA (pulsed)*
VDS=28.0 V, f=1.0 MHz (Reference Only)*
VDS=28.0 V, f=1.0 MHz*
VDS=28.0 V, f=1.0 MHz*
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
VDD=26 V, IDQ=400 mA, Pout=80 W, F=960 MHz
η
VSWR
TYPICAL OPTIMUM DEVICE IMPEDANCE
F (MHz)
Z in (Ω)
Z load (Ω)
935
960
4.6 + j8.0
4.7 + j7.8
2.3 + j3.1
2.4 + j3.1
M/A-COM POWER TRANSISTORS
•
1742 CRENSHAW BLVD
•
TORRANCE, CA 90501
(310) 320-6160
•
FAX (310) 618-9191
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96
TYPICAL BROADBAND PERFORMANCE CURVES - UF28150J
Output Power vs Input Power
Power Output (W)
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
Power Input (W)
960 MHz
935 MHz
Vds = 26 V Idq = .40 A
Output Power vs Drain Voltage
Power Output (W)
100
90
80
70
60
50
40
30
20
10
0
19
21
23
25
27
29
Drain Voltage (V)
Frequency = 960 MHz
Idq = .40 A
Pin = 8.0 W
Gain vs. Frequency
12
11.5
11
10.5
10
9.5
9
932
Gain (dB)
Efficiency (%)
70
65
60
55
50
45
40
35
936
940
944
948
952
956
960
964
30
932
936
Vds = 26 V
Efficiency vs. Frequency
Idq = .40 A
Po = 80 W
940
944
948
952
956
960
964
Frequency (MHz)
Frequency (MHz)
Gain vs. Temperature
Gain (dB)
13
12
11
10
9
8
20
40
60
80
100
120
Case Temperature (C)
80
70
60
50
40
30
20
Vds = 26 V
Idq = .40 A
Po = 80 W
F = 960 MHz
10
0
0
5
Capacitance vs. Voltage
Crss
Coss
F = 1 MHz
10
15
20
25
30
35
Drain Voltage (V)
M/A-COM POWER TRANSISTORS
•
1742 CRENSHAW BLVD
•
TORRANCE, CA 90501
(310) 320-6160
•
FAX (310) 618-9191
M/A-COM, PHO RESERVES THE RIGHT TO MAKE CHANGES AND IMPROVEMENTS WITHOUT NOTICE. DS175 REV 02/16/96
RF MOSFET Power Transistor,
15OW, 28V
UF2815OJ
v2.00
Typical Device Impedance
Frequency (MHz)
100
300
500
V,,=28
Z,, (OHMS)
3.7 - j 5.9
2.7 - j 5.8
2.5 + j 2.9
V,
I,,=400
?A,
PouT=150.0
Watts
Z LoAD
(OHMS)
3.0 - j 0.7
2.6 - j 0.55
2.5 - j 0.5
Z,, is the series equivalent
input impedance
of the device from gate to gate.
as measured from drain to drain.
Z LOAD the optimum series equivalent
is
. .
load impedance
RF Test Fixture
‘V,BIAS
RFDPIJT
RFDJTPUT
m
cl
&wR
c7.
Y
c4 & ls
cl6
RI
P2
R3
17
n
T.3345
16
u
L2
L34
Ru
mhls
Specifications
Subject to Change Without Notice.
M/A-COM, Inc.
North America:
Tel. (800) 366-2266
Fax (800) 618-8883
n
Asia/Pacific:
Tel. +81 (03) 3226-1671
Fax +81 (03) 3226-1451
l
Europe:
Tel. +44 (1344) 869 595
Fax +44 (1344) 300 020
Embedded System
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