SF32 datasheet, PDF - EEWORLD Datasheet

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SF32: Description3 A, SILICON, RECTIFIER DIODE, DO-201AD; CategoryDiscrete semiconductor diode; File Size57KB，2 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn

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SF32 Overview

3 A, SILICON, RECTIFIER DIODE, DO-201AD

SF32 Parametric

Parameter Name	Attribute value
Maker	LRC
package instruction	O-PALF-W2
Reach Compliance Code	unknow
Is Samacsys	N
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-50 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	10 µA
Maximum reverse recovery time	0.035 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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LESHAN RADIO COMPANY, LTD.

SF31 – SF36

SUPER FAST DIODES

Maximum

Peak

Reverse

Voltage

PRV

Maximum Average

Rectified Current

@ Half-Wave

Resistive Load 60Hz

@ T

ºC

Maximum

Forward Peak

Surge Current @ 8.3ms

Superimposed

(Surge)

Maximum

Reverse

Current @ PRV

@ T

=25ºC

TYPE

Maximum

Forward

Voltage

@ T

=25ºC

Maximum

Reverse

Recovery

Time

T rr

Package

Dimensions

µAdc

SF31

SF32

SF33

SF34

SF35

SF36

Trr

100

150

200

300

400

3.0

125

5.0

3.0

0.95

1.25

DO–201AD

=0.5A, I

=1.0A, I

=0.25A

Trr Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

1.0(25.4)

MIN

.375(9.5)

.335(8.5)

1.0(25.4)

MIN

.052(1.3)

.048(1.2)

DIA

.220(5.6) DIA

.197(5.0)

DO – 201AD

9A–1/2

SF32 Related Products

	SF32	SF36	SF35	SF34	SF33	SF31
Description	3 A, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 150 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, SILICON, RECTIFIER DIODE, DO-201AD
Reach Compliance Code	unknow	unknow	unknow	unknow	unknow	unknown
application	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.95 V	1.25 V	1.25 V	0.95 V	0.95 V	0.95 V
JEDEC-95 code	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD	DO-201AD
JESD-30 code	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2	O-PALF-W2
Maximum non-repetitive peak forward current	150 A	150 A	150 A	150 A	150 A	150 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C	-50 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Maximum repetitive peak reverse voltage	100 V	400 V	300 V	200 V	150 V	50 V
Maximum reverse current	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
Maximum reverse recovery time	0.035 µs	0.035 µs	0.035 µs	0.035 µs	0.035 µs	0.035 µs
surface mount	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	LRC	LRC	LRC	LRC	-	LRC
package instruction	O-PALF-W2	O-PALF-W2	-	O-PALF-W2	O-PALF-W2	O-PALF-W2

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