STA475A datasheet, PDF - EEWORLD Datasheet

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STA475A: DescriptionPower Bipolar Transistor, 2A I(C), 85V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, STA, 10 PIN; CategoryDiscrete semiconductor The transistor; File Size24KB，1 Pages; ManufacturerAllegro; Websitehttp://www.allegromicro.com/

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STA475A Overview

Power Bipolar Transistor, 2A I(C), 85V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 10 Pin, STA, 10 PIN

STA475A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Objectid	1410244386
package instruction	STA, 10 PIN
Contacts	10
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	2 A
Collector-emitter maximum voltage	85 V
Configuration	COMPLEX
Minimum DC current gain (hFE)	2000
JESD-30 code	R-PSIP-T10
JESD-609 code	e0
Number of components	4
Number of terminals	10
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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STA475A

Absolute maximum ratings

Symbol

V

CBO

V

CEO

V

EBO

I

C

I

CP

I

B

P

T

j

T

stg

Ratings

100±15

6

2

4 (PW≤1ms, D

u

≤25%)

0.5

4 (T

a

=25°C)

20 (T

c

=25°C)

150

–40 to +150

NPN Darlington

With built-in avalanche diode

(T

a

=25°C)

External dimensions

D

•••

STA400

Electrical characteristics

Symbol

I

CBO

I

EBO

V

CEO

h

FE

V

CE

(sat)

V

BE

(sat)

V

FEC

t

on

t

stg

t

f

0.6

3.0

1.0

85

2000

100

5000

min

Specification

typ

max

10

5

115

12000

1.5

2.2

1.8

V

Unit

(T

a

=25°C)

Unit

V

A

W

°C

Conditions

V

CB

=85V

V

EB

=6V

I

C

=10mA

V

CE

=4V, I

C

=1A

I

C

=1A, I

B

=2mA

I

FEC

=1A

V

CC

30V,

I

C

=1A,

I

B1

=–I

B2

=2mA

µ

A

mA

V

µ

s

µ

s

µ

s

sEquivalent

circuit diagram

3

2

1

R

1

R

2

5

4

6

7

8

9

10

R

1

: 4kΩ typ R

2

: 150Ω typ

Characteristic curves

I

C

-V

CE

Characteristics (Typical)

A

h

FE

-I

C

Characteristics (Typical)

20000

h

FE

-I

C

Temperature Characteristics (Typical)

20000

10000

4

I

B

=

(V

CE

=4V)

(V

CE

=4V)

10m

5m

A

2mA

10000

1mA

Typ

3

0.5mA

5000

°

C

75

I

C

(A)

h

FE

=1

T

a

25

h

FE

2

0.3mA

1000

500

1000

500

°

C

°

C

25

–3

C

0

°

1

0.2mA

100

0

1

2

3

4

5

6

100

50

0.03 0.05

V

CE

(V)

50

0.03 0.05

0.1

0.5

1

4

0.1

0.5

1

4

I

C

(A)

I

C

(A)

V

CE

(sat)-I

C

Temperature Characteristics (Typical)

(I

C

/ I

B

=1000)

3

V

CE

(sat)-I

B

Characteristics (Typical)

3

I

C

-V

BE

Temperature Characteristics (Typical)

4

(V

CE

=4V)

3

V

CE

(sat) (V)

(V)

2

I

C

=4A

I

C

(

A)

(sat)

2

V

CE

25°C

I

C

=2A

1

T

a

=–30°C

75°C

1

I

C

=1A

125

°

C

75

°

C

25

°

C

–30

°

C

1

125˚C

0

0.3

0.5

1

4

0

0.1

0.5

1

5

10

50 100

0

T

a

=

1

2

3

I

C

(A)

I

B

(mA)

V

BE

(V)

θ

j-a

-PW Characteristics

20

P

T

-T

a

Characteristics

24

With Infinite Heatsink

With Silicone Grease

Natural Cooling

Heatsink: Aluminum

in mm

Safe Operating Area (SOA)

5

10

1m

10

m

s

0

µ

s

50

µ

s

20

10

s

θ

j–a

(°C / W)

16

1

P

T

(W)

12

50

×

50

×

2

25

×

50

×

2

Without Heatsink

8.0

I

C

(A)

5

100

×

100

×

2

0.5

0.1

Single Pulse

4.0

0.05

Without Heatsink

T

a

=25°C

1

5

10

50 100

500 1000

0

–40

0

50

100

150

0.03

3

5

10

50

100

200

PW (mS)

T

a

(°C)

V

CE

(V)

152

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