AP2602GY-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Capable of 2.5V Gate Drive
▼
Lower On-resistance
▼
Surface Mount Package
▼
RoHS Compliant & Halogen-Free
SOT-26
D
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
G
D
D
20V
34mΩ
6.3A
D
I
D
Description
AP2602 series are from Advanced Power innovated design and silicon
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
The SOT-26 package is widely used for all commercial-industrial
applications.
G
S
Absolute Maximum Ratings@T
j
=25
o
C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current , V
GS
@ 4.5V
Drain Current , V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
3
3
Rating
20
+12
6.3
5
30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
62.5
Unit
℃/W
1
201501215
Data and specifications subject to change without notice
AP2602GY-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
o
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
20
-
-
-
-
0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.1
-
-
-
0.85
13
-
-
-
8.7
1.5
3.6
6
14
18.4
2.8
603
144
111
Max. Units
-
-
30
34
50
1.2
-
1
10
+100
16
-
-
-
-
-
-
1085
-
-
V
V/℃
mΩ
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=5.5A
V
GS
=4.5V, I
D
=5.3A
V
GS
=2.5V, I
D
=2.6A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=250uA
V
DS
=5V, I
D
=5.3A
V
DS
=20V, V
GS
=0V
V
GS
=+12V, V
DS
=0V
I
D
=5.3A
V
DS
=10V
V
GS
=4.5V
V
DS
=15V
I
D
=1A
R
G
=2Ω
V
GS
=10V
V
GS
=0V
V
DS
=15V
f=1.0MHz
Drain-Source Leakage Current (T
j
=55
o
C)
V
DS
=16V ,V
GS
=0V
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
2
Test Conditions
I
S
=1.2A, V
GS
=0V
I
S
=5A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
16.8
11
Max. Units
1.2
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board, t < 10s ; 156℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2602GY-HF
80
50
T
A
=25 C
I
D
, Drain Current (A)
60
o
5.0V
4.5V
4.0V
I
D
, Drain Current (A)
40
T
A
=150
o
C
5.0V
4.5V
30
V
G
=2.5V
40
4.0V
20
20
V
G
=2.5V
10
0
0
1
2
3
4
5
6
7
0
0
1
2
3
4
5
6
7
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
1.8
I
D
= 1.0 A
T
A
=25
o
C
80
I
D
=5.3A
V
G
=4.5V
Normalized R
DS(ON)
1.4
R
DS(ON)
(m
Ω
)
60
1.0
40
20
0
2
4
6
8
10
0.6
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
10
1
1
T
j
=150 C
o
T
j
=25 C
o
V
GS(th)
(V)
0.6
0.2
-50
I
S
(A)
0.1
0.01
0
0.4
0.8
1.2
1.6
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C )
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2602GY-HF
f=1.0MHz
12
1000
I
D
=5.3A
V
DS
=16V
10
C
iss
V
GS
, Gate to Source Voltage (V)
8
C (pF)
C
oss
100
6
C
rss
4
2
0
0
5
10
15
20
25
10
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
Operation in this
area limited by
R
DS(ON)
100us
1ms
Normalized Thermal Response (R
thja
)
Duty factor=0.5
0.2
0.1
0.1
0.05
I
D
(A)
1
10ms
100ms
1s
T
A
=25 C
Single Pulse
o
0.02
0.01
0.01
Single Pulse
P
DM
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 156℃/W
0.1
DC
0.01
0.01
0.1
1
10
100
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP2602GY-HF
MARKING INFORMATION
Part Number : Y2
Y2SS
Date Code : SS
SS:2004,2008,2012,2016,2020...
SS:2003,2007,2011,2015,2019...
SS:2002,2006,2010,2014,2018...
SS:2001,2005,2009,2013,2017...
5
Microcontroller MCU
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