60 V, 48 A, 5.3 mΩ Low R
DS(ON)
N ch Trench Power MOSFET
DKI06075
Features
V
(BR)DSS
--------------------------------- 60 V (I
D
= 100
µA)
I
D
---------------------------------------------------------- 48 A
R
DS(ON)
------------ 7.0 mΩ max. (V
GS
= 10 V, I
D
= 34 A)
Q
g
-------- 26.9 nC (V
GS
= 4.5 V, V
DS
= 30 V, I
D
= 39 A)
Low Total Gate Charge
High Speed Switching
Low On-Resistance
Capable of 4.5 V Gate Drive
100 % UIL Tested
RoHS Compliant
Package
TO-252
(4)
D
(1) (2) (3)
G D S
(3) (2) (1)
S D G
Not to scale
Applications
DC-DC converters
Synchronous Rectification
Power Supplies
Equivalent circuit
D(2)(4)
G(1)
S(3)
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Single Pulse Avalanche Energy
Avalanche Current
Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Unless otherwise specified, T
A
= 25 °C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
I
SM
E
AS
I
AS
P
D
T
J
T
STG
T
C
= 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
V
DD
= 30 V, L = 1 mH,
I
AS
= 11.2 A, unclamped,
R
G
= 4.7 Ω
Refer to Figure 1
T
C
= 25 °C
PW ≤ 100µs
Duty cycle ≤ 1 %
Test conditions
Rating
60
± 20
48
96
48
96
126
23.3
61
150
− 55 to 150
Unit
V
V
A
A
A
A
mJ
A
W
°C
°C
DKI06075-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
http://www.sanken-ele.co.jp
1
DKI06075
Thermal Characteristics
Parameter
Thermal Resistance
(Junction to Case)
Unless otherwise specified, T
A
= 25 °C
Symbol
R
θJC
Test Conditions
Min.
−
−
Typ.
−
−
Max.
2.0
35.7
Unit
°C/W
°C/W
Thermal Resistance
Mounted on PCB*
R
θJA
(
Junction to Ambient)
* 1 inch square 2 oz copper pad on 1.5 × 1.5 inch PCB.
Electrical Characteristics
Unless otherwise specified, T
A
= 25 °C
Parameter
Drain to Source Breakdown
Voltage
Drain to Source Leakage Current
Gate to Source Leakage Current
Gate Threshold Voltage
Static Drain to Source
On-Resistance
Gate Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 10 V)
Total Gate Charge (V
GS
= 4.5 V)
Gate to Source Charge
Gate to Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source to Drain Diode Forward
Voltage
Source to Drain Diode Reverse
Recovery Time
Source to Drain Diode Reverse
Recovery Charge
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(ON)
R
G
C
iss
C
oss
C
rss
Q
g1
Q
g2
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30 V
I
D
= 39 A
V
GS
= 10 V, R
G
= 4.7 Ω
Refer to Figure 2
V
DS
= 30 V
I
D
= 39 A
Test Conditions
I
D
= 100 μA, V
GS
= 0 V
V
DS
= 60 V, V
GS
= 0 V
V
GS
= ± 20 V
V
DS
= V
GS
, I
D
= 1 mA
I
D
= 34 A, V
GS
= 10 V
I
D
= 17 A, V
GS
= 4.5 V
f = 1 MHz
V
DS
= 25 V
V
GS
= 0 V
f = 1 MHz
Min.
60
−
−
1.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
2.0
5.3
6.2
1.1
3810
420
215
57.2
26.9
9.6
8.5
6.6
7.4
32.0
15.7
0.9
40.8
52.6
Max.
−
100
± 100
2.5
7.0
8.7
−
−
−
−
−
−
−
−
−
−
−
−
1.5
−
−
Unit
V
µA
nA
V
mΩ
mΩ
Ω
pF
nC
ns
V
SD
t
rr
Q
rr
I
S
= 34A, V
GS
= 0 V
I
F
=39 A
di/dt = 100 A/µs
Refer to Figure 3
−
−
−
V
ns
nC
DKI06075-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
2
DKI06075
Test Circuits and Waveforms
L
I
D
V
DS
R
G
V
GS
0V
V
DD
E
AS
½
V
(BR)DSS
1
2
L
I
AS
2
V
(BR)DSS
V
DD
V
(BR)DSS
I
AS
V
DS
I
D
V
DD
(a) Test Circuit
Figure 1 Unclamped Inductive Switching
(b) Waveform
R
L
90%
V
GS
V
DS
R
G
V
GS
0V
P.W. = 10
μs
Duty cycle
≤
1 %
(a) Test Circuit
Figure 2 Switching Time
t
d(on)
t
r
t
on
t
d(off)
t
f
t
off
10%
V
DD
V
DS
90%
10%
(b) Waveform
D.U.T.
I
F
L
I
F
V
DD
R
G
V
GS
0V
0V
di/dt
t
rr
I
RM
× 90 %
I
RM
(a) Test Circuit
Figure 3 Diode Reverse Recovery Time
(b) Waveform
DKI06075-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
3
DKI06075
RDS(ON)-ID characteristics (typical)
VGS=10V
16
14
12
18
16
14
RDS(ON)-ID characteristics (typical)
VGS=4.5V
100
ID-VGS characteristics (typical)
VDS=5V
80
Tc = 125℃
RDS(ON) (mΩ )
10
8
6
4
2
0
0
Tc = 125℃
75℃
RDS(ON) (mΩ )
12
10
60
75℃
8
25℃
25℃
ID (A)
40
6
4
Tc =125℃
75℃
20
2
0
20
40
60
80
100
0
20
40
60
80
100
25℃
0
0
1
2
3
4
5
ID (A)
ID (A)
VGS (V)
VDS-VGS characteristics (typical)
Tc=25℃
0.5
IDR-VSD characteristics (typical)
Tc=25℃
100
VGS=10V
IDR-VSD characteristics (typical)
VDS=0V
100
0.4
80
80
VDS (V)
IDR (A)
IDR (A)
0.3
60
VGS=4.5V
60
Tc =125℃
0.2
ID=34.0A
0.1
ID=19.5A
ID=17.0A
40
3V
40
75℃
0V
20
20
25℃
0.0
0
5
10
15
0
0
0.5
1
1.5
0
0
0.5
1
1.5
VGS (V)
VSD (V)
VSD (V)
Capacitance-VDS characteristics (typical)
10000
Ciss
VGS - Qg characteristics (typical)
15
3
Vth-Tc characteristics (typical)
Capacitance (pF)
100
Ta=25℃
VGS=0V
f =1MHz
10
0
10
20
30
40
Crss
VGS (V)
Coss
5
Tc=25℃
VDS=30V
ID=39A
50
Vth (V)
1000
10
2
1
ID=1mA
VGS=VDS
0
0
20
40
60
0
25
50
75
100
125
150
VDS (V)
Qg (nC)
Tc (℃)
RDS(ON)-Tc characteristics (typical)
14
12
10
RDS(ON)-Tc characteristics (typical)
14
12
10
76
74
72
BVDSS-Tc characteristics (typical)
RDS（ON） (mΩ)
RDS（ON） (mΩ)
8
6
4
2
0
25
50
75
100
125
150
8
6
4
2
0
25
50
75
100
125
150
BVDSS (V)
70
68
66
ID=34A
VGS=10V
ID=1mA
VGS=0V
ID=17A
VGS=4.5V
64
62
25
50
75
100
125
150
Tc (℃)
Tc (℃)
Tc (℃)
DKI06075-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
4
DKI06075
PD-Ta Derating
70
60
SAFE OPERATING AREA
1000
ID(pulse) MAX
100
PT=100μs
50
40
ID (A)
ＰＤ
(W)
10
PT=1ms
30
20
10
0
1
1 shot
Tc=25℃
0.1
0
50
100
150
0.1
1
10
100
VDS (V)
Ta (℃)
TRANSIENT THERMAL RESISTANCE - PULSE WIDTH
1.E+01
Rth j-c (℃/W)
1.E+00
1.E-01
Tc = 25℃
1shot
VDS < 10V
1.E-02
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
P.T. (sec)
DKI06075-DS Rev.1.5
Mar. 11, 2015
SANKEN ELECTRIC CO.,LTD.
5
京公网安备 11010802033920号
EEWORLD
