PE43711
Product Specification
UltraCMOS® RF Digital Step Attenuator, 9 kHz–6 GHz
Features
• Flexible attenuation steps of 0.25 dB, 0.5 dB and
1 dB up to 31.75 dB
• Glitch-less attenuation state transitions
• Monotonicity: 0.25 dB up to 4GHz, 0.5 dB up to
5 GHz and 1 dB up to 6 GHz
• Extended +105 °C operating temperature
• Parallel and Serial programming interfaces
• Packaging—24-lead 4 × 4 mm QFN
Figure 1 •
PE43711 Functional Diagram
Switched Attenuator Array
RF
Input
RF
Output
Applications
• 3G/4G wireless infrastructure
• Land mobile radio (LMR) system
• Point-to-point communication system
Parallel
Control
×7
Serial In
CLK
Control Logic Interface
LE
P/S
Product Description
The PE43711 is a 50Ω, HaRP™ technology-enhanced, 7-bit RF digital step attenuator (DSA) that supports a
broad frequency range from 9 kHz to 6 GHz. It features glitch-less attenuation state transitions and supports
1.8V control voltage and an extended operating temperature range to +105 °C, making this device ideal for
many broadband wireless applications.
The PE43711 is a pin-compatible upgraded version of the PE43502, PE43503, PE43602 and PE43702. An
integrated digital control interface supports both Serial and Parallel programming of the attenuation, including
the capability to program an initial attenuation state at power-up.
The PE43711 covers a 31.75 dB attenuation range in 0.25 dB, 0.5 dB and 1 dB steps. It is capable of
maintaining 0.25 dB monotonicity through 4 GHz, 0.5 dB monotonicity through 5 GHz and 1 dB monotonicity
through 6 GHz. In addition, no external blocking capacitors are required if 0 VDC is present on the RF ports.
The PE43711 is manufactured on Peregrine’s UltraCMOS
®
process, a patented variation of silicon-on-insulator
(SOI) technology on a sapphire substrate.
©2017, 2018, Peregrine Semiconductor Corporation. All rights reserved. • Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121
Product Specification
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DOC-84940-2 – (2/2018)
PE43711
UltraCMOS® RF Digital Step Attenuator
Peregrine’s HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an
innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and
integration of conventional CMOS.
Absolute Maximum Ratings
Exceeding absolute maximum ratings listed in
Table 1
may cause permanent damage. Operation should be
restricted to the limits in
Table 2.
Operation between operating range maximum and absolute maximum for
extended periods may reduce reliability.
ESD Precautions
When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices.
Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to
avoid exceeding the rating specified in
Table 1.
Latch-up Immunity
Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up.
Table 1 •
Absolute Maximum Ratings for PE43711
Parameter/Condition
Supply voltage, V
DD
Digital input voltage
RF input power, 50Ω
9 kHz–48 MHz
>48 MHz–6 GHz
Storage temperature range
ESD voltage HBM, all pins
(1)
ESD voltage CDM, all pins
(2)
Notes:
1) Human body model (MIL–STD 883 Method 3015).
2) Charged device model (JEDEC JESD22-C101).
Min
–0.3
–0.3
Max
5.5
3.6
Unit
V
V
Figure 5
+31
–65
+150
3000
1000
dBm
dBm
°C
V
V
Page 2
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DOC-84940-2 – (2/2018)
PE43711
UltraCMOS® RF Digital Step Attenuator
Recommended Operating Conditions
Table 2
lists the recommending operating condition for the PE43711. Devices should not be operated outside
the recommended operating conditions listed below.
Table 2 •
Recommended Operating Condition for PE43711
Parameter
Supply voltage, V
DD
Supply current, I
DD
Digital input high
Digital input low
Digital input current
RF input power, CW
(1)
9 kHz–48 MHz
>48 MHz–6 GHz
RF input power, pulsed
(2)
9 kHz–48 MHz
>48 MHz–6 GHz
Operating temperature range
Notes:
1) 100% duty cycle, all bands, 50Ω.
2) Pulsed, 5% duty cycle of 4620 µs period, 50Ω.
Min
2.3
Typ
Max
5.5
Unit
V
µA
V
V
µA
150
1.17
–0.3
200
3.6
0.6
17.5
Figure 5
+23
dBm
dBm
Figure 5
+28
–40
+25
+105
dBm
dBm
°C
– (2/2018) – (2/2018)
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Page 3
PE43711
UltraCMOS® RF Digital Step Attenuator
Electrical Specifications
Table 3
provides the PE43711 key electrical specifications at 25 °C, V
DD
= 3.3V, RF1 = RF
IN
, RF2 = RF
OUT
(Z
S
=
Z
L
= 50Ω), unless otherwise specified.
Table 3 •
PE43711 Electrical Specifications
Parameter
Operating frequency
0.25 dB step
0.5 dB step
1 dB step
9 kHz–1.0 GHz
1.0–2.2 GHz
2.2–4.0 GHz
4.0–6.0 GHz
Condition
Frequency
Min
9 kHz
Typ
Max
6 GHz
Unit
As
shown
dB
dB
dB
Attenuation range
0–31.75
0–31.50
0–31.00
1.3
1.6
1.9
2.4
1.5
1.85
2.4
2.8
Insertion loss
dB
dB
dB
dB
0.25 dB step
0–31.75 dB
0–31.75 dB
0–31.75 dB
9 kHz–2.2 GHz
>2.2–3.0 GHz
>3.0–4.0 GHz
±(0.15 + 1.5% of
attenuation setting)
± (0.15 + 2.5% of
attenuation setting)
± (0.25 + 3.5% of
attenuation setting)
dB
dB
dB
0.5 dB step
0–31.5 dB
0–31.5 dB
Attenuation error
0–31.5 dB
>3.0–5.0 GHz
9 kHz–2.2 GHz
>2.2–3.0 GHz
± (0.15 + 1.5% of
attenuation setting)
± (0.15 + 2.5% of
attenuation setting)
± (0.25 + 3.5% of
attenuation setting)
dB
dB
dB
1 dB step
0–31 dB
9 kHz–2.2 GHz
± (0.15 + 1.5% of
attenuation setting)
± (0.15 + 2.5% of
attenuation setting)
± (0.25 + 3.5% of
attenuation setting)
± (0.25 + 6.0% of
attenuation setting)
14
16
dB
0–31 dB
>2.2–3.0 GHz
dB
0–31 dB
>3.0–5.0 GHz
dB
0–31 dB
>5.0–6.0 GHz
9 kHz–4 GHz
4–6 GHz
dB
dB
dB
Return loss
Input port or output port
Page 4
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DOC-84940-2 – (2/2018)
PE43711
UltraCMOS® RF Digital Step Attenuator
Table 3 •
PE43711 Electrical Specifications (Cont.)
Parameter
Relative phase
Input 0.1dB compression
point
(*)
Input IP3
RF T
rise
/T
fall
Settling time
Switching time
Attenuation transient
(envelope)
Two tones at +18 dBm, 20 MHz
spacing
10%/90% RF
RF settled to within 0.05 dB of final
value
50% CTRL to 90% or 10% RF
2 GHz
All states
Condition
Frequency
9 kHz–4 GHz
4–6 GHz
48 MHz–6 GHz
4 GHz
6 GHz
Min
Typ
31
48
31
57
56
200
1.6
275
0.3
Max
Unit
deg
deg
dBm
dBm
dBm
ns
µs
ns
dB
Note: *
The input 0.1dB compression point is a linearity figure of merit. Refer to
Table 2
for the operating RF input power (50Ω).
– (2/2018) – (2/2018)
www.psemi.com
Page 5
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