DISCRETE SEMICONDUCTORS
DATA SHEET
BU506F; BU506DF
Silicon diffused power transistors
Product specification
Supersedes data of February 1996
File under Discrete Semiconductors, SC06
1997 Aug 14
Philips Semiconductors
Product specification
Silicon diffused power transistors
DESCRIPTION
High-voltage, high-speed switching
NPN power transistor in a SOT186
package. The BU506DF has an
integrated efficiency diode.
APPLICATIONS
•
Horizontal deflection circuits of
colour television receivers
•
Line-operated switch-mode
applications.
PINNING
PIN
(1)
1
2
3
Note
1. All pins electrically isolated from mounting base.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
V
CEsat
V
F
I
Csat
I
C
I
CM
P
tot
t
f
PARAMETER
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation voltage
diode forward voltage (BU506DF)
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
see Figs 2 and 3
see Figs 2 and 3
T
h
≤
25
°C;
see Fig.4
inductive load; see Fig.11
V
BE
= 0
open base
CONDITIONS
DESCRIPTION
base
collector
emitter
1
2
3
MBC668
BU506F; BU506DF
2
2
1
MBB008
1
3
MBB077
3
a. BU506F.
b. BU506DF.
Front view
Fig.1 Simplified outline (SOT186) and symbols.
TYP.
−
−
−
1.5
−
−
−
−
0.7
MAX.
1500
700
1
2.2
3
5
8
20
−
UNIT
V
V
V
V
A
A
A
W
µs
I
C
= 3 A; I
B
= 1.33 A; see Figs 7 and 8
I
F
= 3 A
THERMAL CHARACTERISTICS
SYMBOL
R
th j-h
R
th j-a
Notes
1. Mounted
without
heatsink compound and 30
±5
N force on centre of package.
2. Mounted
with
heatsink compound and 30
±5
N force on centre of package.
1997 Aug 14
1
PARAMETER
CONDITIONS
note 2
thermal resistance from junction to ambient
VALUE
6.35
3.85
55
UNIT
K/W
K/W
K/W
thermal resistance from junction to external heatsink note 1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CESM
V
CEO
I
Csat
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
PARAMETER
collector-emitter peak voltage
collector-emitter voltage
collector saturation current
collector current (DC)
collector current (peak value)
base current (DC)
base current (peak value)
total power dissipation
storage temperature
junction temperature
T
h
≤
25
°C;
see Fig.4
V
BE
= 0
open base
V
CE
= 5 V
see Figs 2 and 3
see Figs 2 and 3
CONDITIONS
−
−
−
−
−
−
−
−
BU506F; BU506DF
MIN.
MAX.
1500
700
3
5
8
3
5
20
+150
150
V
V
A
A
A
A
A
W
°C
°C
UNIT
−65
−
ISOLATION CHARACTERISTICS
SYMBOL
V
isolM
C
isol
PARAMETER
isolation voltage from all terminals to external heatsink (peak value)
isolation capacitance from collector to external heatsink
−
12
TYP.
−
MAX.
1500
V
pF
UNIT
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
CEOsust
V
CEsat
V
BEsat
V
F
I
CES
PARAMETER
collector-emitter sustaining
voltage
collector-emitter saturation
voltage
base-emitter saturation voltage
collector-emitter cut-off current
CONDITIONS
I
C
= 100 mA; I
B
= 0; L = 25 mH;
see Figs 5 and 6
I
C
= 3 A; I
B
= 1.33 A;
see Figs 7 and 8
I
C
= 3 A; I
B
= 1.33 A; see Fig.9
V
CE
= V
CESmax
; V
BE
= 0
V
CE
= V
CESmax
; V
BE
= 0;
T
j
= 125
°C
I
EBO
h
FE
emitter-base cut-off current
DC current gain
V
EB
= 6 V; I
C
= 0
V
CE
= 5 V; I
C
= 3 A; see Fig.10
V
CE
= 5 V; I
C
= 100 mA;
see Fig.10
Switching times in horizontal deflection circuit
(see Fig.11)
t
s
t
f
storage time
fall time
I
Csat
= 3 A; L
B
= 12
µH;
I
B(end)
= 1 A; dI
B
/dt =
−0.33
A/µs
I
Csat
= 3 A; L
B
= 12
µH;
I
B(end)
= 1 A; dI
B
/dt =
−0.33
A/µs
−
−
6.5
0.7
−
−
µs
µs
MIN.
700
−
−
−
−
−
−
2.25
6
−
−
−
1.5
−
−
−
−
13
TYP.
MAX.
−
1
1.3
2.2
0.5
1
10
−
30
UNIT
V
V
V
V
mA
mA
mA
diode forward voltage (BU506DF) I
F
= 3 A
1997 Aug 14
2
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506F; BU506DF
handbook, full pagewidth
10
2
IC
(A)
MGB933
10
ICM max
IC max
II
1
10
−1
I
10
−2
10
−3
10
−4
1
10
10
2
10
3
VCE (V)
10
4
Mounted
without
heatsink compound and 30
±5
N force on centre of package.
T
mb
= 25
°C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.2 Forward bias SOAR (no heatsink compound).
1997 Aug 14
3
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506F; BU506DF
handbook, full pagewidth
10
2
IC
(A)
MGB934
10
ICM max
IC max
II
1
10
−1
I
10
−2
10
−3
10
−4
1
10
10
2
10
3
VCE (V)
10
4
Mounted
with
heatsink compound and 30
±5
N force on centre of package.
T
mb
= 25
°C.
I - Region of permissible DC operation.
II - Permissible extension for repetitive pulse operation.
Fig.3 Forward bias SOAR (with heatsink compound).
1997 Aug 14
4
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