BU508AF
BU508AF
TV Horizontal Output Applications
1
TO-3PF
2.Collector
3.Emitter
1.Base
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CP
P
C
T
J
T
STG
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
1500
700
5
5
15
60
150
- 65 ~ 150
Units
V
V
V
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
BV
EBO
I
CES
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
Parameter
* Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Test Condition
I
C
= 100mA, I
B
= 0
I
E
= 10mA, I
C
= 0
V
CE
= 1500V, V
BE
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 4.5A
I
C
= 4.5A, I
B
= 2A
I
C
= 4.5A, I
B
= 2A
2.25
1
1.5
V
V
Min.
700
5
1
10
Typ.
Max.
Units
V
V
mA
mA
* Pulse Test: PW = 300µs, duty cycle = 1.5% Pulsed
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
BU508AF
Typical Characteristics
100
10000
V
BE
(sat)[mV], SATURATION VOLTAGE
V
CE
= 5V
I
C
= 2 I
B
h
FE
, DC CURRENT GAIN
10
1000
1
100
0.1
0.01
0.1
1
10
10
0.1
1
10
100
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. Base-Emitter Saturation Voltage
10000
1000
V
CE
(sat)[mV], SATURATION VOLTAGE
I
C
= 2 I
B
f = 1MHz
1000
C
ob
[pF], CAPACITANCE
1
10
100
100
100
10
0.1
10
1
10
100
I
C
[A], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
100
80
70
I
C
[A], COLLECTOR CURRENT
I
C
Max. (Pulsed)
10
1m
s
P
C
[W], POWER DISSIPATIOAN
60
I
C
Max. (Continuous)
50
DC
1
40
30
0.1
20
10
0.01
1
10
100
1000
0
0
25
50
o
75
100
125
150
175
200
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
©2002 Fairchild Semiconductor Corporation
Rev. B, December 2002
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I
2
C™
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when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2002 Fairchild Semiconductor Corporation
Rev. I1
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