AP95T10GP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
RoHS Compliant & Halogen-Free
G
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
100V
6.4mΩ
150A
S
Description
AP95T10 series are from Advanced Power innovated design
and silicon process technology to achieve the lowest possible
on-resistance and fast switching performance. It provides the
designer with an extreme efficient device for use in a wide
range of power applications.
The TO-220 package is widely preferred for all commercial-
industrial through hole applications. The low thermal
resistance and low package cost contribute to the worldwide
popular package.
G
D
TO-220(P)
S
o
Absolute Maximum Ratings@T
j
=25 C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
D
@T
C
=25℃
I
DM
P
D
@T
C
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
.
Rating
100
+20
150
108
120
600
375
-55 to 175
-55 to 175
Units
V
V
A
A
A
A
W
℃
℃
Drain Current, V
GS
@ 10V(Silicon Limited)
Drain Current, V
GS
@ 10V(Silicon Limited)
Drain Current, V
GS
@ 10V(Package Limited)
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maixmum Thermal Resistance, Junction-ambient
Value
0.4
62
Units
℃/W
℃/W
1
201410143
Data and specifications subject to change without notice
AP95T10GP-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=60A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=60A
V
DS
=80V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=40A
V
DS
=80V
V
GS
=10V
V
DS
=50V
I
D
=40A
R
G
=25Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Min.
100
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
105
-
-
110
19
58
70
210
300
240
910
375
2
Max. Units
-
6.4
4
-
25
+100
176
-
-
-
-
-
-
-
-
-
V
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
5870 9400
.
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=40A, V
GS
=0V
I
S
=40A, V
GS
=0V
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
75
200
Max. Units
1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP95T10GP-HF
320
160
T
C
= 25 C
o
10V
8.0V
7.0V
I
D
, Drain Current (A)
120
T
C
= 175
o
C
I
D
, Drain Current (A)
240
10V
8.0V
7.0V
6.0V
6.0V
160
80
V
GS
=5.0V
80
40
V
GS
=5.0V
0
0
4
8
12
16
20
24
28
0
0
4
8
12
16
20
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
12
3.0
I
D
=40A
T
A
=25
o
C
10
2.6
I
D
=60A
V
G
=10V
Normalized R
DS(ON)
R
DS(ON)
(m
Ω
)
2.2
1.8
8
.
1.4
1.0
6
0.6
4
4
5
6
7
8
9
10
0.2
-50
0
50
100
150
200
V
GS
,Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
60
50
1.2
40
T
j
=175 C
30
o
T
j
=25 C
o
Normalized V
GS(th)
I
S
(A)
0.8
20
0.4
10
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.0
-50
0
50
100
150
200
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP95T10GP-HF
12
8000
f=1.0MHz
I
D
= 40 A
V
GS
, Gate to Source Voltage (V)
10
V
DS
=50V
V
DS
=60V
V
DS
=80V
C (pF)
6000
8
C
iss
6
4000
4
2000
2
C
oss
C
rss
0
0
40
80
120
160
1
5
9
13
17
21
25
29
33
37
0
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Operation in this area
limited by R
DS(ON)
Duty factor=0.5
100
100us
0.2
I
D
(A)
0.1
1ms
10
.
0.1
0.05
P
DM
0.02
t
T
10ms
T
c
=25
o
C
Single Pulse
1
0.01
100ms
DC
10
100
1000
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.1
1
0.00001
0.0001
0.001
0.01
0.1
1
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
AP95T10GP-HF
MARKING INFORMATION
95T10GP
YWWSSS
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
.
5
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