Radiation Hardened Dual, Inverting Power MOSFET
Drivers
HS-4423RH, HS-4423EH,
HS-4423BRH, HS-4423BEH
The Radiation Hardened HS-4423RH, HS-4423EH,
HS-4423BRH, HS-4423BEH are inverting, dual, monolithic
high-speed MOSFET drivers designed to convert TTL level
signals into high current outputs at voltages up to 18V.
The inputs of these devices are TTL compatible and can be
directly driven by our HS-1825ARH PWM device or by our
ACS/ACTS and HCS/HCTS type logic devices. The fast rise
times and high current outputs allow very quick control of high
gate capacitance power MOSFETs in high frequency
applications.
The high current outputs minimize power losses in MOSFETs by
rapidly charging and discharging the gate capacitance. The
output stage incorporates a low voltage lock-out circuit that
puts the outputs into a three-state mode when the supply
voltage drops below 10V for the HS-4423RH, HS-4423EH and
7.5V for the HS-4423BRH and HS-4423BEH.
Constructed with the Intersil dielectrically isolated Rad Hard
Silicon Gate (RSG) BiCMOS process, these devices are immune
to Single Event Latch-up and have been specifically designed
to provide highly reliable performance in harsh radiation
environments
Features
• Electrically screened to DLA SMD #
5962-99511
• QML qualified per MIL-PRF-38535 requirements
• EH version acceptance tested to 50krad(Si) (LDR)
• Radiation environment
- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)
- Latch-up immune
- Low dose rate immune
• I
PEAK
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (typ)
• Matched rise and fall times (C
L
= 4300pF) . . . . . . . . 75ns (max)
• Low voltage lock-out feature
- HS-4423RH, HS-4423EH, . . . . . . . . . . . . . . . . . . . . . <10.0V
- HS-4423BRH, HS-4423BEH . . . . . . . . . . . . . . . . . . . . . <7.5V
• Wide supply voltage range . . . . . . . . . . . . . . . . . . . 12V to 18V
• Prop delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250ns (max)
• Consistent delay times with V
CC
changes
• Low power consumption
- 40mW with inputs high
- 20mW with inputs low
• Low equivalent input capacitance . . . . . . . . . . . . . 3.2pF (typ)
• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4000V
Applications
• Switching power supplies
• DC/DC converters
• Motor controllers
Pin Configuration
HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH
(FLATPACK CDFP4-F16)
TOP VIEW
NC
IN A
NC
GND A
GND B
NC
IN B
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
OUT A
OUT A
V
CC
V
CC
OUT B
OUT B
NC
NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-bonded to their
same electrical points on the die.
February 11, 2014
FN4564.5
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 1-888-468-3774
|
Copyright Intersil Americas LLC 2002, 2014. All Rights Reserved
Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.
All other trademarks mentioned are the property of their respective owners.
HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH
Die Characteristics
DIE DIMENSIONS:
4890
µ
m x 3370
µ
m (193 mils x 133 mils)
Thickness: 483
µ
m
±
25.4
µ
m (19 mils
±
1 mil)
Backside Finish:
Silicon
INTERFACE MATERIALS:
Glassivation:
Type: PSG (Phosphorous Silicon Glass)
Thickness: 8.0kÅ
±
1.0kÅ
Top Metallization:
Type: AlSiCu
Thickness: 16.0kÅ
±
2kÅ
Substrate:
Radiation Hardened Silicon Gate,
Dielectric Isolation
ASSEMBLY RELATED INFORMATION:
Substrate Potential:
Unbiased (DI)
ADDITIONAL INFORMATION:
Worst Case Current Density:
<2.0 x 10
5
A/cm
2
Transistor Count:
125
Metallization Mask Layout
HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH
GND (5)
GND (4)
IN B (7)
IN A (2)
OUT B (10)
OUT B (11)
OUT A (15)
OUT A (14)
V
CC
(12)
V
CC
(13)
For additional products, see
www.intersil.com/en/products.html
Intersil products are manufactured, assembled and tested utilizing ISO9001 quality systems as noted
in the quality certifications found at
www.intersil.com/en/support/qualandreliability.html
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time
without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be
accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third
parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see
www.intersil.com
3
FN4564.5
February 11, 2014
Embedded System
京公网安备 11010802033920号
EEWORLD
