BU806/807
BU806/807
High Voltage & Fast Switching Darlington
Transistor
• Using In Horizontal Output Stages of 110° Crt Video Displays
°
• BUILT-IN SPEED-UP Diode Between Base and Emitter
1
TO-220
2.Collector
3.Emitter
1.Base
NPN Epitaxial Silicon Darlington Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
Collector-Base Voltage
: BU806
: BU807
V
CEO
Collector-Emitter Voltage
: BU806
: BU807
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Emitter-Base Voltage
Collector Current (DC)
*Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
200
150
6
8
15
2
60
150
- 55 ~150
V
V
V
A
A
A
W
°C
°C
400
330
V
V
Parameter
Value
Units
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
V
CEO
(sus)
Parameter
* Collector-Emitter Sustaining Voltage
: BU806
: BU807
Collector Cut-off Current
: BU806
: BU807
Collector Cut-off Current
: BU806
: BU807
Emitter Cut-off Current
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
* Damper Diode Forward Voltage
Test Condition
I
C
= 100mA, I
B
= 0
Min.
200
150
100
100
100
100
3
1.5
2.4
2
Max.
Units
V
V
µA
µA
µA
µA
mA
V
V
V
I
CES
V
CE
= 400V, V
BE
= 0
V
CE
= 330V, V
BE
= 0
V
CE
= 400V, V
BE
= -6V
V
CE
= 330V, V
BE
= -6V
V
BE
= 6V, I
C
= 0
I
C
= 5A, I
B
= 50mA
I
C
= 5A, I
B
= 50mA
I
F
= 4A
I
CEV
I
EBO
V
CE
(sat)
V
BE
(sat)
V
F
* Pulsed: pulsed duration = 300µs, duty cycle = 1.5%
©2000 Fairchild Semiconductor International
Rev. A, February 2000
BU806/807
Typical Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
Ic = 100 I
B
h
FE
, DC CURRENT GAIN
V
BE
(sat)
100
V
CE
= 5V
V
CE
= 1.5V
1
V
CE
(sat)
10
0.1
1
10
0.1
0.1
1
10
100
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
10
1000
I
C
[A], COLLECTOR CURRENT
100
V
f
[V], FORWARD VOLTAGE
I
C
MAX. (Pulse)
10
1ms
10us
500
m
10
1
I
C
MAX. (DC)
1
us
s
DC
100us
0.1
BU806
0.1
0.1
1
10
0.01
0.01
BU807
0.1
1
10
100
1000
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 3. Damper Diode
Figure 4. Safe Operating Area
80
70
P
C
[W], POWER DISSIPATION
60
50
40
30
20
10
0
0
50
o
100
150
200
T
C
[ C], CASE TEMPERATURE
Figure 5. Power Derating
©2000 Fairchild Semiconductor International
Rev. A, February 2000
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2
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®
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®
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which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
51mcu
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