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30-F206R6A050SB01-M442E10

Description
IGBT3 technology for low saturation losses
File Size511KB,6 Pages
ManufacturerVincotech
Websitehttps://www.vincotech.com/
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30-F206R6A050SB01-M442E10 Overview

IGBT3 technology for low saturation losses

F206R6A050SB
target datasheet
flowPACK 2
Features
Inverter, blocking diodes
Built-in thermistor
IGBT3 technology for low saturation losses
600V/50A
flow2 housing
Target Applications
Power Regeneration
Schematic
Types
30-F206R6A050SB-M442E
30-F206R6A050SB01-M442E10
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Blocking Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
2
1600
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
160
160
1400
T
j
=25°C
9800
135
206
150
V
A
A
A
2
s
W
°C
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
VCE
600V, Tj
Top max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
60
75
150
150
116
176
±20
6
360
175
V
A
A
A
W
V
μs
V
°C
copyright
by
Vincotech
1
Revision: 3

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Description IGBT3 technology for low saturation losses IGBT3 technology for low saturation losses IGBT3 technology for low saturation losses
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