F206R6A100SB
target datasheet
flowPACK 2
Features
●
Inverter, blocking diodes
●
Built-in thermistor
●
IGBT3 technology for low saturation losses
600V/100A
flow2 housing
Target Applications
●
Power Regeneration
Schematic
Types
●
30-F206R6A100SB-M444E
●
30-F206R6A100SB01-M444E10
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Blocking Diode
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
2
1600
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
160
160
1400
T
j
=25°C
9800
135
206
150
V
A
A
A
2
s
W
°C
Inverter Transistor
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
V
CE
≤
600V, Tj
≤
Top max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
120
150
300
300
167
250
±20
6
360
175
V
A
A
A
W
V
μs
V
°C
copyright
by
Vincotech
1
Revision: 3
F206R6A100SB
target datasheet
Maximum Ratings
T
j
=25°C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°C
T
c
=80°C
T
h
=80°C
T
c
=80°C
600
52
70
100
85
129
175
V
A
A
W
°C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°C
°C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12.7
min 12.7
>200
V
mm
mm
copyright
by
Vincotech
2
Revision: 3
F206R6A100SB
target datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Blocking Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
Thermal resistance chip to heatsink per chip
Thermal resistance chip to heatsink per chip
V
F
V
to
r
t
I
r
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
1600
100
100
100
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
Tj=25°C
Tj=125°C
1.11
1.04
0.91
0.78
2
2.5
1.7
V
V
mΩ
0.1
2.2
0.52
K/W
0.34
mA
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
±15
480
100
Tj=25°C
f=1MHz
0
25
Tj=25°C
Rgoff=8
Ω
Rgon=8
Ω
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
V
CE
=V
GE
15
0
20
600
0
0.0016
100
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5.8
1.5
1.7
6.5
2.1
0.7
1400
none
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
6280
400
186
620
0.57
K/W
0.38
nC
pF
V
V
mA
nA
Ω
ns
±15
300
100
mWs
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Thermal resistance chip to heatsink per chip
Thermal resistance chip to case per chip
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
Erec
R
thJH
R
thJC
Thermal grease
thickness≤50um
λ
= 1 W/mK
Rgon=8
Ω
±15
300
50
50
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1.42
1.29
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
tbd.
1.12
K/W
0.74
2.1
V
A
ns
μC
A/μs
mWs
copyright
by
Vincotech
3
Revision: 3
F206R6A100SB
target datasheet
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
Thermistor
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B
(25/50)
B
(25/100)
Tol. ±3%
Tol. ±3%
R
ΔR/R
P
R100=1486
Ω
Tj=25°C
Tc=100°C
Tc=100°C
Tj=25°C
Tj=25°C
Tj=25°C
Tj=25°C
-5
200
2
3950
3996
B
22000
5
Ω
%
mW
mW/K
K
K
Module Properties
Thermal resistance, case to heatsink
Module stray inductance
Chip module lead resistance, terminals -chip
Mounting torque
Terminal connection torque
Weight
R
thCH
L
sCE
R
cc'1+EE'
M
M
G
3.8
6.7
tbd.
5
tbd.
4
7
tbd.
4.2
7.4
K/W
nH
mΩ
Nm
Nm
g
copyright
by
Vincotech
4
Revision: 3
F206R6A100SB
target datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
17mm housing
17mm housing, without thermistor
Ordering Code
30-F206R6A100SB-M444E
30-F206R6A100SB01-M444E10
in DataMatrix as
M444-E
M444-E10
in packaging barcode as
M444-E
M444-E10
Outline
Pinout
copyright
by
Vincotech
5
Revision: 3
京公网安备 11010802033920号
EEWORLD
