70-W212NMA400NB02-M209P62
flowMNPC 4w
Features
●
Mixed voltage NPC
●
Low inductive
●
High power screw interface
1200V/400A
flowSCREW 4w housing
Target Applications
●
Solar inverter
●
UPS
●
High speed motor drive
Schematic
Types
●
70-W212NMA400NB02-M209P62
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
half bridge IGBT (T1, T4)
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CES
I
C
I
Cpulse
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
h
=80°
C
1200
358
800
864
±20
10
800
175
V
A
A
W
V
µs
V
°
C
neutral point FWD (D2, D3)
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per FWD
Maximum Junction Temperature
V
RRM
I
FAV
I
FRM
P
tot
T
j
max
T
j
=25°
C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
C
T
h
=80°
650
232
600
306
175
V
A
A
W
°
C
copyright
by
Vincotech
1
Revision: 1.2
70-W212NMA400NB02-M209P62
Maximum Ratings
Tj=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
neutral point IGBT (T2, T3)
Collector-emitter break down voltage
DC collector current
Pulsed collector current
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CES
I
C
I
Cpuls
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
h
=80°
C
650
260
900
500
±20
10
360
175
V
A
A
W
V
µs
V
°
C
half bridge FWD (D1, D4)
Peak Repetitive Reverse Voltage
DC forward current
Surge forward current
I t-value
Power dissipation per FWD
Maximum Junction Temperature
2
V
RRM
I
FAV
I
FSM
T
j
=25°
C
1200
T
h
=80°
C
T
j
=25°
C
252
1720
3700
528
175
V
A
A
A
2
s
W
°
C
T
j
=T
j
max
t
p
=10ms, sin 180°
It
P
tot
T
j
max
T
j
=T
j
max
2
T
j
=150°
C
T
h
=80°
C
General Module Properties
Material of module baseplate
Material of internal isulation
Cu
Al2O3
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Comparative tracking index
CTI
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
>200
V
mm
mm
copyright
by
Vincotech
2
Revision: 1.2
70-W212NMA400NB02-M209P62
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
half bridge IGBT (T1, T4)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. FWD
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
100um preapplied
PCM
100um grease
1W/mK
±15
600
400
Tj=25°
C
932
f=1MHz
0
25
Tj=25°
C
Rgoff=1
Rgon=1
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
V
CE
=V
GE
15
0
20
1200
0
0,04
400
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=125°
C
5,5
1
6
1,90
2,21
6,5
3
2
3000
V
V
mA
nA
none
120
121
22
23
160
193
45
69
2,96
5,40
12,25
17,66
ns
±15
350
400
mWs
40000
8000
680
nC
pF
Thermal resistance chip to heatsink per chip
R
thJH
0,11
K/W
Thermal resistance chip to case per chip
R
thJC
0,13
neutral point FWD (D2, D3)
FWD forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
di(rec)max
/dt
300
Rgon=1
±15
350
400
Erec
100um preapplied
PCM
100um grease
1W/mK
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
1,2
1,59
1,48
245
320
132
267
16
31
8684
3334
4,06
7,81
2,26
V
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
0,31
K/W
Thermal resistance chip to case per chip
R
thJC
0,36
copyright
by
Vincotech
3
Revision: 1.2
70-W212NMA400NB02-M209P62
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
neutral point IGBT (T2, T3)
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off incl FWD
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
f=1MHz
C
rss
Q
Gate
100um preapplied
PCM
100um grease
1W/mK
15
480
75
0
25
Tj=25°
C
548
3000
nC
Rgoff=2
Rgon=2
V
CE
=V
GE
15
0
20
650
0
0,0048
300
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
5,1
1,08
5,80
1,61
1,85
6,4
2,3
2,2
3000
V
V
mA
nA
none
191
192
32
34
239
262
89
123
4,29
6,19
10,19
14,03
ns
±15
700
300
mWs
18480
pF
Thermal resistance chip to heatsink per chip
R
thJH
0,19
K/W
Thermal resistance chip to case per chip
R
thJC
0,22
copyright
by
Vincotech
4
Revision: 1.2
70-W212NMA400NB02-M209P62
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
half bridge FWD (D1, D4)
FWD forward voltage
Reverse leakage current
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovery energy
V
F
I
r
I
RRM
t
rr
Q
rr
di(rec)max
/dt
300
650
Rgon=2
±15
350
300
E
rec
100um preapplied
PCM
100um grease
1W/mK
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
2,21
2,25
2,76
0,48
56
V
mA
A
ns
µC
A/µs
mWs
309
441
66
136
19
38
14653
14438
4,36
9,72
Thermal resistance chip to heatsink per chip
R
thJH
0,18
K/W
Thermal resistance chip to case per chip
R
thJC
0,20
Thermistor
Rated resistance
Deviation of R
100
Power dissipation
Power dissipation constant
B-value
B-value
Vincotech NTC Reference
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
R
∆R/R
P
R100=1486
Tj=25°
C
Tj=100°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
Tj=25°
C
-12
200
2
3950
3996
B
22000
+14
%
mW
mW/K
K
K
copyright
by
Vincotech
5
Revision: 1.2
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