80-M006PNB010SA*-K615*
datasheet
MiniSKiiP PIM 0
Features
● Solderless interconnection
● Trench Fieldstop IGBT's for low saturation losses
● Optional 2- and 3-leg rectifier
®
600 V / 10 A
MiniSKiiP
®
0 housing
Target Applications
● Industrial Drives
● Embedded Drives
Schematic
Types
80-M006PNB010SA01-K615D, 2-leg rectifier
80-M006PNB010SA-K615C, 3-leg rectifier
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Rectifier Diode
Repetitive peak reverse voltage
DC forward current
Surge (non-repetitive) forward current
I
2
t-value
Power dissipation
Maximum Junction Temperature
Symbol
Condition
Value
Unit
V
RRM
I
FAV
I
FSM
t
p
= 10 ms
T
j
= 25 °C
T
j
=
T
jmax
T
s
= 80 °C
T
c
= 80 °C
1600
25
25
220
240
T
j
=
T
jmax
T
s
= 80 °C
T
c
= 80 °C
46
70
150
V
A
A
A
2
s
W
°C
I
2
t
P
tot
T
jmax
Inverter Switch
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
V
CE
I
C
I
CRM
T
j
=
T
jmax
t
p
limited by
T
jmax
V
CE
≤ 1200V,
T
j
≤
T
op
max
T
s
= 80 °C
T
c
= 80 °C
600
15
15
30
30
T
s
= 80 °C
T
c
= 80 °C
48
72
±20
T
j
≤ 150 °C
V
GE
= 15 V
6
360
175
V
A
A
A
W
V
µs
V
°C
P
tot
V
GE
t
SC
V
CC
T
jmax
T
j
=
T
jmax
copyright Vincotech
1
12 Jan. 2016 / Revision 3
80-M006PNB010SA*-K615*
datasheet
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Inverter Diode
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation
Maximum Junction Temperature
Symbol
Condition
Value
Unit
V
RRM
I
F
I
FRM
P
tot
T
jmax
T
j
=T
jmax
t
p
limited by
T
jmax
T
j
=T
jmax
T
s
= 80 °C
T
c
= 80 °C
T
s
= 25 °C
T
s
= 80 °C
T
c
= 80 °C
600
15
15
30
38
57
175
V
A
A
W
°C
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(T
jmax
- 25)
°C
°C
Isolation Properties
Insulation voltage
Creepage distance
Clearance
Comparative Tracking Index
V
is
DC Voltage
t
p
=2s
4000
min 12,7
min 12,7
V
mm
mm
CTI
>200
copyright Vincotech
2
12 Jan. 2016 / Revision 3
80-M006PNB010SA*-K615*
datasheet
Characteristic Values
Parameter
Symbol
Conditions
V
GE
[V]
or
V
GS
[V]
V
r
[V]
or
V
CE
[V]
or
V
DS
[V]
I
C
[A]
or
I
F
[A]
or
I
D
[A]
Value
Unit
T
j
[°C]
Min
Typ
Max
Rectifier Diode
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
F
V
to
r
t
I
r
R
th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
1500
25
25
25
25
125
25
125
25
125
25
125
1,43
1,44
0,92
0,79
20,29
26,11
1,64
V
V
m
0,05
mA
Thermal resistance junction to sink
1,5
K/W
Inverter Switch
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss
Turn-off energy loss
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CEsat
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
G
R
th(j-s)
V
CE
=V
GE
15
0
20
600
0
0,00015
10
25
150
25
150
25
150
25
150
5
1,19
5,8
1,64
1,89
6,5
1,99
0,0006
300
V
V
mA
nA
none
25
150
25
150
25
150
25
150
25
150
25
150
90
91
22
25
133
156
120
144
0,26
0,38
0,26
0,34
551
f = 1 MHz
0
25
25
40
17
±15
Thermal grease
thickness≤50um
λ = 1 W/mK
25
55
62
nC
pF
ns
R
goff
= 32
R
gon
= 32
±15
300
10
mWs
Thermal resistance junction to sink
2
K/W
Inverter Diode
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
(
di
rf
/dt )
max
E
rec
R
th(j-s)
Thermal grease
thickness≤50um
λ = 1 W/mK
R
gon
= 32
±15
300
10
10
25
150
25
150
25
150
25
150
25
150
25
150
1,39
1,32
6,77
9,87
233
352
0,66
1,46
105
109
0,13
0,30
2,5
V
A
ns
µC
A/µs
mWs
Thermal resistance junction to sink
K/W
Thermistor
Rated resistance
Deviation of R
R100
Temperature coefficient
A-value
B-value
Vincotech PTC Reference
R
Δ
R/R
R
100
R
25
= 1000
R
100
= 1670
25
25
100
25
-3
-2
1000
3
2
1670
0,76
% /K
1/K
1/K²
E
%
B
(25/50)
B
(25/100)
25
25
7,635*10
-3
1,731*10
-5
copyright Vincotech
3
12 Jan. 2016 / Revision 3
80-M006PNB010SA*-K615*
datasheet
Inverter Switch / Inverter Diode
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
25
I
C
(A)
IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
25
I
C
(A)
IGBT
20
20
15
15
10
10
5
5
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
t
p
=
T
j
=
V
GE
from
250
µs
25
°C
7 V to 17 V in steps of 1 V
t
p
=
T
j
=
V
GE
from
250
µs
150
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
10
I
C
(A)
IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
35
I
F
(A)
FWD
30
8
25
6
20
15
4
T
j
= T
jmax
-25°
C
T
j
= T
jmax
-25°
C
T
j
= 25°
C
10
2
5
T
j
= 25°
C
0
0
2
4
6
8
V
GE
(V)
10
0
0,0
0,5
1,0
1,5
2,0
V
F
(V)
2,5
t
p
=
V
CE
=
250
10
µs
V
t
p
=
250
µs
copyright Vincotech
4
12 Jan. 2016 / Revision 3
80-M006PNB010SA*-K615*
datasheet
Inverter Switch / Inverter Diode
Figure 5
Typical switching energy losses
as a function of collector current
E
=
f(I
C
)
1,0
E (mWs)
IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E
=
f(R
G
)
1,0
E (mWs)
IGBT
E
on High T
0,8
0,8
0,6
E
on Low T
E
off High T
E
on High T
0,6
E
on Low T
0,4
0,4
E
off High T
E
off Low T
E
off Low T
0,2
0,2
0,0
0
5
10
15
I
C
(A)
20
0,0
0
32
64
96
128
R
G
(
Ω
)
160
inductive load
T
j
=
25/150
V
CE
=
300
V
GE
=
±15
R
gon
=
32
R
goff
=
32
°C
V
V
inductive load
T
j
=
25/150
V
CE
=
300
V
GE
=
±15
I
C
=
10
°C
V
V
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
C
)
0,6
E (mWs)
FWD
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
0,4
E (mWs)
FWD
T
j
= T
jmax
-25°
C
0,5
E
rec
0,3
0,4
E
rec
0,3
0,2
E
rec
T
j
= T
jmax
-25°
C
0,2
0,1
0,1
T
j
= 25°
C
E
rec
T
j
= 25°
C
0,0
0
5
10
15
I
C
(A)
20
0,0
0
32
64
96
128
R
G
(
Ω
)
160
inductive
T
j
=
V
CE
=
V
GE
=
R
gon
=
load
25/150
300
±15
32
°C
V
V
inductive
T
j
=
V
CE
=
V
GE
=
I
C
=
load
25/150
300
±15
10
°C
V
V
A
copyright Vincotech
5
12 Jan. 2016 / Revision 3
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