V23990-K222-A-PM
MiniSKiiP
®
2 housing
Features
●
Solderless interconnection
●
Trench Fieldstop technology
600V/30A
MiniSKiiP
®
2 housing
Target Applications
●
Industrial Motor Drives
Schematic
Types
●
V23990-K222-A-PM
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
D8,D9,D10,D11,D12,D13
Repetitive peak reverse voltage
DC forward current
Surge forward current
I2t-value
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
FAV
I
FSM
t
p
=10ms
It
P
tot
T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
2
1500
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
45
370
T
j
=25°
C
360
56
150
V
A
A
A
2
s
W
°
C
T1,T2,T3,T4,T5,T6,T7
Collector-emitter break down voltage
DC collector current
Repetitive peak collector current
Turn off safe operating area
Power dissipation per IGBT
Gate-emitter peak voltage
Short circuit ratings
Maximum Junction Temperature
P
tot
V
GE
t
SC
V
CC
T
j
max
T
j
≤150°
C
V
GE
=15V
V
CE
I
C
I
Cpulse
T
j
=T
j
max
t
p
limited by T
j
max
VCE
≤
600V, Tj
≤
Top max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
600
35
90
V
A
A
A
W
V
µs
V
°
C
45
70
±20
6
360
175
Copyright by Vincotech
1
Revision: 3.1
V23990-K222-A-PM
Maximum Ratings
T
j
=25° unless otherwise specified
C,
Parameter
Symbol
Condition
Value
Unit
D1,D2,D3,D4,D5,D6,D7
Peak Repetitive Reverse Voltage
DC forward current
Repetitive peak forward current
Power dissipation per Diode
Maximum Junction Temperature
V
RRM
I
F
I
FRM
P
tot
T
j
max
T
j
=25°
C
T
j
=T
j
max
t
p
limited by T
j
max
T
j
=T
j
max
T
h
=80°
C
T
c
=80°
C
T
h
=80°
C
T
c
=80°
C
600
28
20
V
A
A
W
°
C
45
175
Thermal Properties
Storage temperature
Operation temperature under switching condition
T
stg
T
op
-40…+125
-40…+(Tjmax - 25)
°
C
°
C
Insulation Properties
Insulation voltage
Creepage distance
Clearance
V
is
t=2s
DC voltage
4000
min 12,7
min 12,7
V
mm
mm
Copyright by Vincotech
2
Revision: 3.1
V23990-K222-A-PM
Characteristic Values
Parameter
Symbol
V
GE
[V] or
V
GS
[V]
Conditions
V
r
[V] or
V
CE
[V] or
V
DS
[V]
I
C
[A] or
I
F
[A] or
I
D
[A]
T
j
Min
Value
Typ
Max
Unit
D8,D9,D10,D11,D12,D13
Forward voltage
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
V
F
V
to
r
t
I
r
Thermal grease
thickness≤50um
λ
= 1 W/mK
1500
25
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
Tj=25°
C
Tj=125°
C
0,8
1,1
1,03
0,9
0,77
10
10
1,35
V
V
m
0,1
mA
Thermal resistance chip to heatsink per chip
R
thJH
1,25
K/W
T1,T2,T3,T4,T5,T6,T7
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
V
GE(th)
V
CE(sat)
I
CES
I
GES
R
gint
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oss
C
rss
Q
Gate
Thermal grease
thickness≤50um
λ
= 1 W/mK
±15
400
15
Tj=25°
C
f=1MHz
0
25
C
Tj=25°
Rgoff=16
Rgon=16
V
CE
=V
GE
15
0
±25V
600
0
0,00043
30
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
5
5,8
1,51
1,72
6,5
V
V
0,1
350
none
mA
nA
±15
300
30
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
87,5
94,2
137
155
72,9
94,9
0,7
0,899
0,62
0,79
1630
108
50
87
nC
pF
ns
mWs
Thermal resistance chip to heatsink per chip
R
thJH
1,35
K/W
D1,D2,D3,D4,D5,D6,D7
Diode forward voltage
Peak reverse recovery current
Reverse recovery time
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
V
F
I
RRM
t
rr
Q
rr
Rgoff=16
±15
300
30
30
di(rec)max
/dt
Erec
Thermal grease
thickness≤50um
λ
= 1 W/mK
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
Tj=25°
C
Tj=150°
C
1
1,51
1,57
26,03
28,1
212
356,4
2,08
3,23
1257
854
0,42
0,69
2,1
2,7
V
A
ns
µC
A/µs
mWs
Thermal resistance chip to heatsink per chip
R
thJH
K/W
Thermistor
Rated resistance
Deviation of R100
R100
Power dissipation constant
A-value
B-value
Vincotech NTC Reference
B(25/50) Tol. %
B(25/100) Tol. %
R
∆R/R
P
R100=1670
T=25°
C
T=100°
C
T=100°
C
C
T=25°
T=25°
C
T=25°
C
7,635*10-3
1,731*10-5
E
-3
1670,313
mW/K
1/K
1/K²
1000
3
%
Copyright by Vincotech
3
Revision: 3.1
V23990-K222-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 1
Typical output characteristics
I
C
= f(V
CE
)
100
I
C
(A)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 2
Typical output characteristics
I
C
= f(V
CE
)
100
I
C
(A)
T1,T2,T3,T4,T5,T6,T7 IGBT
80
80
60
60
40
40
20
20
0
0
1
2
3
4
V
CE
(V)
5
0
0
1
2
3
4
V
CE
(V)
5
At
t
p
=
T
j
=
V
GE
from
250
µs
25
°C
7 V to 17 V in steps of 1 V
At
t
p
=
T
j
=
V
GE
from
250
µs
125
°C
7 V to 17 V in steps of 1 V
Figure 3
Typical transfer characteristics
I
C
= f(V
GE
)
30
I
C
(A)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 4
Typical diode forward current as
a function of forward voltage
I
F
= f(V
F
)
100
I
F
(A)
D1,D2,D3,D4,D5,D6,D7 FWD
T
j
= 25°
C
25
80
20
60
T
j
= T
jmax
-25°
C
15
40
10
20
5
T
j
= T
jmax
-25°
C
T
j
= 25°
C
0
0
2
4
6
8
V
GE
(V)
10
0
0
0,5
1
1,5
2
2,5
V
F
(V)
3
At
t
p
=
V
CE
=
250
10
µs
V
At
t
p
=
250
µs
Copyright by Vincotech
4
Revision: 3.1
V23990-K222-A-PM
T1,T2,T3,T4,T5,T6,T7 / D1,D2,D3,D4,D5,D6,D7
Figure 5
Typical switching energy losses
as a function of collector current
E = f(I
C
)
2,5
E (mWs)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 6
Typical switching energy losses
as a function of gate resistor
E = f(R
G
)
2,5
E (mWs)
T1,T2,T3,T4,T5,T6,T7 IGBT
E
on High T
2,0
2,0
E
on Low T
E
on High T
E
on Low T
1,5
1,5
E
off High T
1,0
1,0
E
off High T
E
off Low T
E
off Low T
0,5
0,5
0,0
0
10
20
30
40
50
I
C
(A)
60
0,0
0
16
32
48
64
R
G
(
Ω
)
80
With an inductive load at
T
j
=
°C
25/125
V
CE
=
300
V
V
GE
=
±15
V
R
gon
=
16
R
goff
=
16
With an inductive load at
T
j
=
°C
25/125
V
CE
=
300
V
V
GE
=
±15
V
I
C
=
30
A
Figure 7
Typical reverse recovery energy loss
as a function of collector current
E
rec
= f(I
C
)
1,0
E (mWs)
T1,T2,T3,T4,T5,T6,T7 IGBT
Figure 8
Typical reverse recovery energy loss
as a function of gate resistor
E
rec
= f(R
G
)
1,0
E (mWs)
T1,T2,T3,T4,T5,T6,T7 IGBT
T
j
= T
jmax
-25°
C
E
rec
0,8
0,8
T
j
= T
jmax
-25°
C
0,6
0,6
T
j
= 25°
C
E
rec
E
rec
0,4
0,4
T
j
= 25°
C
E
rec
0,2
0,2
0,0
0
10
20
30
40
50
I
C
(A)
60
0,0
0
16
32
48
64
R
G
(
Ω
)
80
With an inductive load at
T
j
=
°C
25/125
V
CE
=
300
V
V
GE
=
±15
V
R
gon
=
16
With an inductive load at
T
j
=
°C
25/125
V
CE
=
300
V
V
GE
=
±15
V
I
C
=
30
A
Copyright by Vincotech
5
Revision: 3.1
Microcontroller MCU
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